TLP2200 TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC TLP2200 Isolated Buss Driver High Speed Line Receiver Microprocessor System Interfaces MOS FET Gate Driver Direct Replacement For HCPL−2200 Unit in mm The TOSHIBA TLP2200 consists of a GaAℓAs light emitting diode and integrated high gain, high speed photodetector. This unit is 8−lead DIP package. The detector has a three state output stage that eliminates the need for pull−up resistor, and built−in schmitt trigger. The detector IC has an internal shield that provides a guaranteed common mode transient immunity of 1000V / μs. z Input current: IF = 1.6mA z Power supply voltage: VCC = 4.5~20V z Switching speed: 2.5MBd guaranteed TOSHIBA 11−10C4 z Common mode transient immunity: ±1000V / μs (min.) Weight: 0.54 g z Guaranteed performance over temp: 0~85°C z Isolation voltage: 2500Vrms(min.) Pin Configuration (top view) z UL recognized: UL1577, file No. E67349 1 Truth Table (positive logic) VCC 7 2 Input Enable Output H L H L H H L L Z Z H L 8 6 3 GND 4 SHIELD 5 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND 6: VE (enable) 7: VO (output) 8: VCC Schematic ICC IF IO 8 IE 7 2 VF 3 6 SHIELD 1 5 VCC VO VE GND 2007-10-01 TLP2200 Recommended Operating Conditions Characteristic Symbol Min. Typ. Input current, on IF(ON) 1.6 Input current, off IF(OFF) 0 Supply voltage VCC 4.5 ― 20 V Enable voltage high VEH 2.0 ― 20 V Enable voltage low VEL 0 ― 0.8 V N ― ― 4 ― Topr 0 ― 85 °C Fan out (TTL load) Operating temperature Max. Unit ― 5 mA ― 0.1 mA Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Absolute Maximum Ratings (no derating required up to 70°C) D e t e c t o r L E D Characteristic Symbol Rating Unit IF 10 mA IFPT 1 A VR 5 V IO 25 mA Supply voltage VCC −0.5~20 V Output voltage VO −0.5~20 V Three state enable voltage VE −0.5~20 V PT 210 mW Forward current Peak transient forward current (Note 1) Reverse voltage Output current Total package power dissipation (Note 2) Operating temperature range Topr −40~85 °C Storage temperature range Tstg −55~125 °C Lead solder temperature (10s) (**) Tsol 260 °C Isolation voltage (AC 1min., R.H. ≤ 60%,Ta = 25°C) (Note 3) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Pulse width 1μs 300pps. (Note 2) Derate 4.5mW / °C above 70°C ambient temperature. (Note 3) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted together (**) 1.6mm below seating plane. 2 2007-10-01 TLP2200 Electrical Characteristics (unless otherwise specified, Ta = 0~85°C,VCC = 4.5~20V, IF(ON) = 1.6~5mA, IF(OFF) = 0~0.1mA, VEL = 0~0.8V,VEH = 2.0~20V) Characteristic Symbol Test Condition Typ.* Max. Unit ― ― ― 2 100 500 μA Output leakage current (VO > VCC) IOHH IF = 5mA, VCC = 4.5V Logic low output voltage VOL IOL = 6.4mA (4 TTL load) ― 0.32 0.5 V Logic high output voltage VOH IOH = −2.6mA 2.4 3.4 ― V Logic low enable current IEL VE = 0.4V ― −0.13 −0.32 mA Logic high enable current IEH VE = 2.7V VE = 5.5V VE = 20V ― ― ― ― ― 0.01 20 100 250 μA Logic low enable voltage VEL ― ― ― 0.8 V Logic high enable voltage VEH ― 2.0 ― ― V Logic low supply current ICCL IF = 0mA VE = don't care VCC = 5.5V VCC = 20V ― ― 5 5.6 6.0 7.5 mA Logic high supply current ICCH IF = 5mA VE = don't care VCC = 5.5V VCC = 20V ― ― 2.5 2.8 4.5 6.0 mA IOZL IF = 5mA VE = 2V VO = 0.4V ― 1 −20 IOZH IF = 0mA VE = 2V IOSL IF = 0mA VO = 2.4V VO = 5.5V VO = 20V VO = VCC = 5.5V VO = VCC = 20V ― ― ― 25 40 ― ― 0.01 55 80 20 100 500 ― ― IOSH IF = 5mA VO = GND VCC = 5.5V VCC = 20V −10 −25 −25 −60 ― ― mA IHYS VCC = 5V ― 0.05 ― mA IF = 5mA, Ta = 25°C ― 1.55 1.7 V IF = 5mA ― −2.0 ― mV / °C High impedance state output current Logic low short circuit output current (Note 4) Logic high short circuit output current (Note 4) Input current hysteresis Input forward voltage Temperature coefficient of forward voltage VF ΔVF / ΔTa VO = 5.5V VO = 20V Min. μA mA Input reverse breakdown voltage BVR IR = 10μA, Ta = 25°C 5 ― ― V Input capacitance CIN VF = 0V, f = 1MHz, Ta = 25°C ― 45 ― pF Resistance (input−output) RI−O VI−O = 500V R.H. ≤ 60% (Note 3) 5×10 ― Ω Capacitance (input−output) CI−O VI−O = 0V, f = 1MHz (Note 3) ― pF ― 10 10 14 0.6 (**) All typ. values are at Ta = 25°C, VCC = 5V, IF(ON) = 3mA unless otherwise specified. 3 2007-10-01 TLP2200 Switching Characteristics (unless otherwise specified, Ta = 0~85°C,VCC = 4.5~20V,IF(ON) = 1.6~5mA,IF(OFF) = 0~0.1mA) Characteristic Symbol Propagation delay time to logic high output level Test Cir− cuit Test Condition Without peaking capacitor C1 With peaking capacitor C1 Without peaking capacitor C1 tpLH (Note 5) Propagation delay time to logic low output level tpHL 1 (Note 5) Output rise time (10−90%) Output fall time (90−10%) Output enable time to logic high Output enable time to logic low Output disable time from logic high Output disable time from logic low Common mode transient immunity at logic high output (Note 6) Common mode transient immunity at logic low output (Note 6) With peaking capacitor C1 Min. Typ. Max. ― 235 ― ― ― 400 ― 250 ― ― ― 400 Unit ns ns tr tf ― ― ― 35 20 ― ― ns ns tpZH ― ― ― ― ns ― ― ― ― ns tpHZ ― ― ― ― ns tpLZ ― ― ― ― ns −1000 ― ― V / μs 1000 ― ― V / μs tpZL 2 IF = 1.6mA, VCM = 50V, CMH Ta = 25°C 3 IF = 0mA, VCM = 50V, CML Ta = 25°C (*) All typ. values are at Ta = 25°C, VCC = 5V, IF(ON) = 3mA unless otherwise specified. (Note 4) Duration of output short circuit time should not exceed 10ms. (Note 5) The tpLH propagation delay is measured from the 50% point on the leading edge of the input pulse to the 1.3V point on the leading edge of the output pulse. The tpHL propagation delay is measured from the 50% point on the trailing edge of the input pulse to the 1.3V point on the trailing edge of the output pulse. (Note 6) CML is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic low state (VO ≤ 0.8V). CMH is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic high state (VO ≤ 2.0V). 4 2007-10-01 TLP2200 tpHL, tpLH, tr and tf Output VO Pulse Monitoring Generator Node tr = tf = 5ns VCC IF(ON) 1 50% Input IF tpLH 0mA tpHL Monitoring VOH 90% Output VO tf tr 2.15kΩ IF(ON) Node 1.3V 10% R1 Input 1.6mA 1.1kΩ 3mA 8 2 7 3 6 D1~D4 : 1S1588 D1 GND 4 R1 VOL VCC 5V 619Ω VO = 5V D2 CL D3 5kΩ Test Circuit 1 5 D4 C1=120pF C1 is peaking capacitor. The probe and jig 681Ω capacitances are include in C1. CL is approximately 15pF which includes probe 5mA and stray wiring capacitance. Test Circuit 2 tpHZ, tpZH, tpLZ and tpZL Pulse 5V Generator ZO = 50Ω VCC VO 1 1.3V Output VO IF=IF (OFF) tPZL S1 Closed S2 Open Output VO IF=IF (ON) S1 Open S2 Closed 1.3V tPLZ 0V S1 and S2 0.5V Closed VOL tPZH 1.3V 0V tPHZ 0.5V VOH ~1.5V ~ IF Input VE Monitoring VCC 8 2 7 3 6 4 GND 5 D1~D4 : 1S1588 D1 CL D2 D3 5kΩ 3.0V Input VE S1 619Ω tr = tf = 5ns D4 S2 Node S1 and S2 Closed CL is approximately 15pF which includes probe and stray wiring capacitance. 5 2007-10-01 TLP2200 Test Circuit 3 Common Mode Transient Immunity VCC VCM Output 50V 90% IF 10% 0V B Output VO Switch AT A: IF = 1.6mA VO Monitor- A 6 3 VFF VOH 8 7 2 tf tr VCC 1 GND 4 VO(MIN.) (*) 5 ing Node 0.1μF Bypass VCM + − Pulse gen. ZO = 50Ω VO(MAX.) (*) VOL Switch AT B: IF = 0mA (*) See note6 6 2007-10-01 TLP2200 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01