Polyfet F1027 Patented gold metalized silicon gate enhancement mode rf power vdmos transistor Datasheet

polyfet rf devices
F1027
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
200 Watts Gemini
Package Style AR
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
440 Watts
Maximum
Junction
Temperature
0.4 o C/W
200 o C
Storage
Temperature
DC Drain
Current
-65 o C to 150o C
24 A
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
30V
70 V
RF CHARACTERISTICS ( 200 WATTS OUTPUT )
SYMBOL
PARAMETER
Gps
Common Source Power Gai
η
Drain Efficienc
VSWR
MIN
TYP
MAX
10
60
Load Mismatch Toleranc
20:1
UNITS
TEST CONDITIONS
dB
Idq = 2.4 A, Vds = 28.0 V, F = 175 MHz
%
Idq = 2.4 A, Vds = 28.0 V, F = 175 MHz
Relative
Idq = 2.4 A, Vds = 28.0 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
Bvdss
Drain Breakdown Voltag
65
Idss
Zero Bias Drain Curren
6
Igss
Gate Leakage Curren
Vgs
Gate Bias for Drain Curren
gM
Forward Transconductanc
Rdson
Saturation Resistanc
Idsat
Saturation Curren
Ciss
Common Source Input Capacitanc
Crss
Common Source Feedback Capacitanc
Coss
Common Source Output Capacitanc
UNITS
V
1
TEST CONDITIONS
Ids =
0.3 A,
Vgs = 0V
mA
Vds = 28.0 V,
Vgs = 0V
1
uA
Vds = 0 V,
Vgs = 30V
7
V
Ids = 0.6 A,
Vgs = Vds
4.8
Mho
Vds = 10V, Vgs = 5V
0.18
Ohm
Vgs = 20V, Ids = 24 A
33
Amp
Vgs = 20V, Vds = 10V
198
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
24
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
120
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
F1027
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1027 PIN VS POUT F=175 MHZ; IDQ=2.4A; VDS=28.0V
F1B 6 DICE CAPACITANCE
19
300
1000
18
250
17
POUT
200
16
Ciss
GAIN
Coss
15
150
100
14
13
100
Crss
12
50
11
10
0
0
2
4
6
8
10
12
14
16
18
10
20
0
5
10
PIN IN WATTS
15
20
25
30
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F1B 6 DICE IV CURVE
F1B 6 DIE GM & ID vs VG
40
100
35
Id
30
25
10
20
15
10
Gm
1
5
0
0
2
4
6
8
10
12
14
16
18
20
0.1
Vds in Volts
0
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
S11 AND S22 SMITH CHART
Vg = 10V
2
Vg = 12V
4
6
8
10
12
14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
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