TLP181 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP181 Office Machine Programmable Controllers AC / DC−Input Module Telecommunication Unit in mm The TOSHIBA mini flat coupler TLP181 is a small outline coupler, suitable for surface mount assembly. TLP181 consist of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. · Collector−emitter voltage: 80V (min.) · Current transfer ratio: 50% (min.) · Isolation voltage: 3750Vrms (min.) · UL recognized: UL1577, Rank GB: 100% (min.) file no. E67349 · Option (V4) type VDE approved: VDE0884 satisfied TOSHIBA Maximum operating insulation voltage: 565VPK 11−4C1 Weight: 0.09 g Highest permissible over voltage: 6000VPK Pin Configuration (top view) 1 6 3 4 1: Anode 3: Cathode 4: Emitter 6: Collector 1 2002-09-25 TLP181 Current Transfer Ratio Current Transfer Ratio (%) (IC / IF) Type TLP181 Classification *1 IF = 5mA, VCE = 5V, Ta = 25°C Marking Of Classification Min. Max. (None) 50 600 BLANK, Y, Y■, G, G■, B, B■, GB Rank Y 50 150 Y, Y■ Rank GR 100 300 G, G■ Rank BL 200 600 B, B■ Rank GB 100 600 G, G■, B, B■, GB *1: EX, Rank GB: TLP181 (GB) (Note) Application, type name for certification test, please use standard product type name, i, e. TLP181 (GB): TLP181 2 2002-09-25 TLP181 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ∆IF / °C -0.7 (Ta ≥ 53°C) mA / °C Pulse forward current (100µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector-emitter voltage VCEO 80 V Emitter-collector valtage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 Circuit) PC 150 mW ∆PC / °C -1.5 mW / °C Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.0 mW / °C BVS 3750 Vrms Forward current Detector LED Forward current detating Collector power dissipation derating (1 Circuit Ta ≥ 25°C) Junction temperature Isolation voltage (AC, 1min., R.H. ≤ 60%) (Note 1) (Note 1) Device considered a two-terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 48 V Forward current IF ― 16 20 mA Collector current IC ― 1 10 mA Topr -25 ― 85 °C Operating temperature 3 2002-09-25 TLP181 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V — — 10 µA Capacitance CT V = 0, f = 1 MHz — 30 — pF Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 — — V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 48 V, ( Ambient light below 1000 lx) — 0.01 (2) 0.1 (10) µA VCE = 48 V, Ta = 85°C, ( Ambient light below 1000 lx) — 2 (4) 50 (50) µA V = 0, f = 1 MHz — 10 — pF MIn. Typ. Max. Unit 50 — 600 100 — 600 — 60 — 30 — — Collector dark current Capacitance (collector to emitter) ICEO CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Collector-emitter saturation voltage Off-state collector current Symbol IC / IF IC / IF (sat) VCE (sat) IC (off) Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB % % IC = 2.4 mA, IF = 8 mA — — 0.4 IC = 0.2 mA, IF = 1 mA Rank GB — 0.2 — — — 0.4 VF = 0.7V, VCE = 48 V — 1 10 µA Min. Typ. Max. Unit — 0.8 — pF 1×1012 1014 — Ω 3750 — — AC, 1 second, in oil — 10000 — DC, 1 minute, in oil — 10000 — V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS 4 Vrms Vdc 2002-09-25 TLP181 Swiching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω Min. Typ. Max. — 2 — — 3 — — 3 — Turn-off time toff — 3 — Turn-on time tON — 2 — Storage time ts — 25 — Turn-off time tOFF — 40 — Fig. 1 RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (Fig.1) Unit µs µs Switching time test circuit IF RL VCC IF tS VCE VCE 4.5V 0.5V tON 5 tOFF 2002-09-25 TLP181 PC – Ta 200 80 160 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) IF – Ta 100 120 60 40 20 0 -20 0 20 40 60 80 100 80 40 0 -20 120 0 20 Ambient temperature Ta (°C) 40 120 IF – VF Pulse width ≤ 100µs Ta = 25°C 1000 IF (mA) IFP (mA) 500 Forward current Pulse forward current 100 100 300 100 50 30 10 3 10 -3 3 10 -2 3 10 -1 3 10 10 1 0.1 0.01 0 85°C Duty cycle ratio DR 0.001 0 25 °C 0.4 -25°C 0.8 1.2 Forward voltage ∆VF / ∆Ta – IF 1.6 VF 2 (V) IFP – VFP -3.2 IFP (mA) 1000 -2.8 -2.4 Pulse forward current Forward voltage etemperature coefficient ∆VF / ∆Ta (mV / °C) 80 Ambient temperature Ta (°C) IFP – DR 3000 60 -2.0 -1.6 -1.2 -0.8 500 300 100 50 30 10 Pulse width ≤ 10µs 5 Repetitive 3 frequency = 100Hz Ta = 25°C -0.4 0.1 0.3 0.5 1 3 Forward current 5 10 30 1 0.6 50 IF (mA) 1.0 1.4 Pulse forward 6 1.8 2.2 2.6 3.0 voltage VFP (V) 2002-09-25 TLP181 IC – VCE IC – VCE 50 30 Ta = 25°C Ta = 25°C 50mA Collector current IC (mA) 40 30mA 20mA 15mA Collector current IC (mA) 50mA 30 10mA PC (MAX.) 20 IF = 5mA 10 0 0 2 4 6 8 Collector-emitter voltage VCE 40mA 30mA 20 20mA 10mA 10 5mA 2mA 0 0 10 (V) 0.2 0.4 0.6 0.8 Collector-emitter voltage VCE 1.0 (V) ICEO – Ta IC – IF 10 Ta = 25°C 1 100 Collector dark current ID(ICEO) (µA) (mA) 50 Collector current IC 30 10 Sample A 5 3 Sample B 1 0.5 VCE = 10V VCE = 5V 0.3 0.1 0.1 VCE = 0.4V 0.3 0.5 1 3 5 Forward current 10 IF 30 50 (mA) 10 10 10 10 IC / IF – IF -1 VCE = 48V 24V 10 1000 0 10V -2 5V -3 -4 0 20 40 60 80 100 Ambient temperature Ta (°C) Ta = 25°C Current transfer ratio IC / IF (%) 500 300 Sample A 100 Sample B 50 30 VCE = 10V VCE = 5V VCE = 0.4V 10 0.1 0.3 0.5 1 3 Forward current 5 IF 10 30 50 (mA) 7 2002-09-25 TLP181 VCE(sat) – Ta IC – Ta 0.24 100 IF = 1mA (mA) 0.20 0.16 Collector current IC Collector-emitter saturation voltage VCE(sat) (V) IC = 0.2mA 0.12 0.08 0.04 VCE = 5V 50 IF = 25mA 30 10mA 5mA 10 5 3 1mA 0 -40 1 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 0.5 0.5mA 0.3 0.1 -20 Switching Time – RL 1000 0 20 40 60 80 100 Ambient temperature Ta (°C) Ta = 25°C IF = 16mA 500 VCC = 5V Switching Time – Ta 300 160 tOFF 50 tOFF 30 ts 50 ts Switching time (µs) Switching time (µs) 100 30 10 10 5 3 tON 1 5 0.5 3 0.3 IF = 16mA tON 1 1 0.1 3 5 10 30 50 100 VCC = 5V RL = 1.9kΩ -20 0 20 40 60 80 100 Ambient temperature Ta (°C) Load resistance RL (kΩ) 8 2002-09-25 TLP181 RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-25