Microsemi APT30DQ100B Ultrafast soft recovery rectifier diode Datasheet

1000V 30A
APT30DQ100B
APT30DQ100S
APT30DQ100BG* APT30DQ100SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(B)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• PFC
TO
- 24
7
D3PAK
1
2
• Cooler Operation
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Higher Reliability Systems
• Low Forward Voltage
• Low Leakage Current
2
1
(S)
2
1
• Increased System Power
Density
• Avalanche Energy Rated
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol
VR
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT30DQ100B_S(G)
UNIT
1000
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 102°C, Duty Cycle = 0.5)
30
RMS Forward Current (Square wave, 50% duty)
43
IF(RMS)
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
EAVL
Avalanche Energy (1A, 40mH)
TJ,TSTG
TL
Amps
150
20
mJ
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 30A
2.5
3.0
IF = 60A
3.06
IF = 30A, TJ = 125°C
1.92
Volts
VR = 1000V
100
VR = 1000V, TJ = 125°C
500
Microsemi Website - http://www.microsemi.com
26
UNIT
µA
pF
7-2009
VF
Characteristic / Test Conditions
053-4239 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30DQ100B_S(G)
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 667V, TC = 25°C
IF = 30A, diF/dt = -200A/µs
VR = 667V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
IF = 30A, diF/dt = -1000A/µs
Reverse Recovery Charge
IRRM
VR = 667V, TC = 125°C
Maximum Reverse Recovery Current
TYP
MAX
UNIT
-
24
-
295
-
440
-
4
-
330
ns
-
1550
nC
-
8
-
150
ns
-
2250
nC
-
25
Amps
MIN
TYP
ns
IF = 30A, diF/dt = -200A/µs
Maximum Reverse Recovery Current
MIN
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
WT
Package Weight
Torque
MAX
UNIT
.80
°C/W
0.22
oz
5.9
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.8
D = 0.9
0.7
0.6
0.7
0.5
0.5
0.4
0.3
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.9
0.3
t1
t2
0.2
0
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.1
SINGLE PULSE
0.05
10-5
10
-4
10-3
10-2
0.1
1
053-4239 Rev B
7-2009
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
APT30DQ100B_S(G)
TYPICAL PERFORMANCE CURVES
100
80
70
60
TJ = 175°C
50
40
TJ = 125°C
30
TJ = 25°C
20
TJ = -55°C
10
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
4000
T = 125°C
J
V = 667V
R
3500
60A
3000
2500
2000
30A
1500
15A
1000
500
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
R
60A
400
300
30A
15A
200
100
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
35
T = 125°C
J
V = 667V
R
30
trr
20
30A
15
15A
10
5
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
Qrr
Duty cycle = 0.5
T = 175°C
45
1.0
trr
60A
25
50
1.2
J
40
IRRM
35
0.8
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
T = 125°C
J
V = 667V
0
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
90
trr, REVERSE RECOVERY TIME
(ns)
500
0.6
30
25
20
0.4
Qrr
15
10
0.2
5
0.0
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
140
120
100
80
7-2009
60
40
20
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-4239 Rev B
CJ, JUNCTION CAPACITANCE
(pF)
160
APT30DQ100B_S(G)
Vr
diF /dt Adjust
+18V
APT10035LLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
3
D PAK Package Outline
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Cathode
e3 100% Sn
5.38 (.212)
6.20 (.244)
15.85 (.624)
16.05(.632)
1.00 (.039)
1.15(.045)
0.40 (.016)
0.65 (.026)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.250 (.010)
2.70 (.106)
2.90 (.114)
1.15 (.045)
1.45 (.057)
1.20 (.047)
1.90 (.075) 1.40 (.055)
2.10 (.083)
5.45 (.215) BSC
(2 Plcs.)
Anode
2.21 (.087)
2.59 (.102)
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
13.30 (.524)
13.60(.535)
12.40 (.488)
12.70 (.500)
18.70 (.736)
19.10 (.752)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
7-2009
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
053-4239 Rev B
Cathode
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.40 (.094)
2.70 (.106)
(Base of Lead)
Heat Sink (Cathode)
and Leads
are Plated
Anode
Cathode
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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