Microsemi APTDC902U1201G Single sic diode power module Datasheet

APTDC902U1201G
Single SiC Diode
Power Module
VRRM = 1200V
IF = 90A @ Tc = 80°C
Application
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Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
Features
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•
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SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
High level of integration
Benefits
All multiple inputs and outputs must be shorted together
1/2 ; 5/6 ; 7/8 ; 11/12
•
•
•
•
•
•
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Outstanding performance at high frequency operation
Low losses
Low noise switching
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Symbol
VR
VRRM
IF(AV)
IFSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Average Forward Current Duty cycle = 50%
Non-Repetitive Forward Surge Current
10 µs
TC = 80°C
TC = 25°C
Max ratings
Unit
1200
V
90
1100
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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APTDC902U1201G – Rev 0 February, 2009
Absolute maximum ratings (per leg)
APTDC902U1201G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics (per leg)
Symbol Characteristic
VF
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
QC
Total Capacitive Charge
C
Total Capacitance
Test Conditions
Min
Tj = 25°C
Tj = 175°C
Tj = 25°C
VR = 1200V
Tj = 175°C
IF = 90A, VR = 600V
di/dt =4500A/µs
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
IF = 90A
Typ
1.6
2.3
288
504
Max
1.8
3.0
1800
9000
Unit
V
µA
360
nC
864
621
pF
Thermal and package characteristics (per leg)
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
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M4
Typ
Max
0.22
175
125
100
4.7
80
Unit
°C/W
V
°C
N.m
g
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APTDC902U1201G – Rev 0 February, 2009
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
APTDC902U1201G
SP1 Package outline (dimensions in mm)
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3-4
APTDC902U1201G – Rev 0 February, 2009
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
APTDC902U1201G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.24
0.9
0.2
0.7
0.16
0.5
0.12
0.3
0.08
0.1
0.04
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
TJ=25°C
160
IR Reverse Current (µA)
IF Forward Current (A)
900
TJ=75°C
120
80
TJ=125°C
TJ=175°C
40
750
600
450
TJ=75°C
300
TJ=125°C
150
TJ=175°C
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
0
400
600
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
6300
5400
4500
3600
2700
1800
900
0
10
100
VR Reverse Voltage
1000
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTDC902U1201G – Rev 0 February, 2009
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