ASI AM81214-015 Npn silicon rf power transistor Datasheet

AM81214-015
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG
DESCRIPTION:
The ASI AM81214-015 is an NPN silicon
bipolar transistor designed for L-Band
pulsed radar applications. It utilizes internal
matching and gold metalization for high
reliability and good VSWR capability.
FEATURES:
• 1.2 to 1.4 GHz operation
• Internal Input/Output Matching Network
• PG = 8.5 dB at 14.5 W/1400 MHz
• Omnigold™ Metalization System
• 5:1 VSWR capability rated at conditions
MAXIMUM RATINGS
IC
1.8 A
VCC
32 V
PDISS
37.5 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θJC
4.0 °C/W
CHARACTERISTICS
SYMBOL
Common Base
TC = 25 °C
NONETEST CONDITIONS
BVCBO
IC = 15 mA
BVCER
IC = 15 mA
BVEBO
IE = 1.5 mA
ICES
VCE = 28 V
VBE = 28 V
hFE
VCE = 5.0 V
IC = 1.0 A
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
UNITS
48
V
48
V
3.5
V
30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
1.5
mA
300
---
REV. B
1/2
AM81214-015
ERROR! REFERENCE SOURCE
NOT FOUND.
CHARACTERISTICS
SYMBOL
PG
ηC
TC = 25 °C
NONETEST CONDITIONS
VCC = 28 V
PIN = 2.0 W
POUT = 15 W
MINIMUM TYPICAL MAXIMUM
f = 1.2 to 1.4 GHz
8.5
48
UNITS
dB
%
Pulse width = 1000 µsec, Duty Cycle = 10%
IMPEDANCE DATA
FREQ
ZIN (Ω)
ZCL (Ω)
1.2 GHz
1.3 GHz
1.4 GHz
3.0 + j6.5
3.5 + j7.5
5.0 + j7.0
16 + j3.0
13 + j6.0
11 + j5.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
2/2
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