GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • • • • • Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 μs (typ.) Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Symbol Rating Unit VCES 600 V V VGES ±20 DC IC 20 1 ms ICP 40 DC IF 20 1 ms A A JEDEC ― JEITA ― IFM 40 Collector power dissipation (Tc = 25°C) PC 45 W TOSHIBA Junction temperature Tj 150 °C Weight: 1.7 g (typ.) Tstg −55 to 150 °C Storage temperature range 2-10R1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 2.78 °C/W Thermal resistance (diode) Rth (j-c) 4.23 °C/W Equivalent Circuit Marking Collector Gate 20J321 Emitter Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT20J321 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ― ― 1.0 mA VGE (OFF) IC = 2 mA, VCE = 5 V 3.5 ― 6.5 V VCE (sat) IC = 20 A, VGE = 15 V ― 2.0 2.45 V VCE = 10 V, VGE = 0, f = 1 MHz ― 3000 ― pF td (on) ― 0.06 ― tr ― 0.04 ― Inductive Load ― 0.17 ― VCC = 300 V, IC = 20 A ― 0.24 ― ― 0.04 ― ― 0.34 ― Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Turn-on delay time Rise time Switching time Turn-on time ton Turn-off delay time td (off) Fall time Switching loss tf VGG = +15 V, RG = 33 Ω (Note 1) Turn-off time toff Turn-on switching loss Eon ― 0.40 ― Turn-off switching loss Eoff ― 0.43 ― (Note 2) μs mJ Peak forward voltage VF IF = 20 A, VGE = 0 ― ― 2.1 V Reverse recovery time trr IF = 20 A, di/dt = −100 A/μs ― 100 ― ns Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 −VGE IC L IC VCC 90% 90% RG VCE 0 VCE 10% td (off) 10% tf toff 10% td (on) 10% tr ton Note 2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 VCE 5% Eoff Eon 2 2006-11-01 GT20J321 IC – VCE VCE – VGE 40 15 30 20 Collector-emitter voltage (A) 20 VCE (V) 9 Common emitter Tc = 25°C Collector current IC 20 8 10 VGE = 7 V 0 0 1 2 3 Collector-emitter voltage 4 16 12 8 40 10 IC = 5 A VCE (V) 4 8 VCE – VGE 16 VCE (V) Common emitter Tc = 25°C Collector-emitter voltage VCE (V) Collector-emitter voltage 20 VGE (V) VCE – VGE 12 8 40 10 20 4 IC = 5 A 4 8 12 16 Common emitter Tc = 125°C 16 12 40 8 20 10 4 IC = 5 A 0 0 20 VGE (V) 4 8 12 Gate-emitter voltage IC – VGE 16 20 VGE (V) VCE (sat) – Tc 40 5 Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 5 V (A) 16 20 Gate-emitter voltage Collector current IC 12 Gate-emitter voltage 20 0 0 20 4 0 0 5 Common emitter Tc = −40°C 30 20 10 Tc = 125°C −40 4 Common emitter VGE = 15 V 40 3 30 20 2 10 IC = 5 A 1 25 0 0 4 8 12 Gate-emitter voltage 16 0 −60 20 VGE (V) −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT20J321 Switching time Switching time 3 (μs) 1 ton, tr, td (on) – RG Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 1) Switching time ton, tr, td (on) Switching time ton, tr, td (on) (μs) 3 0.3 ton 0.1 td (on) tr 0.03 1 ton, tr, td (on) – IC Common emitter VCC = 300 V VGG = 15 V RG = 33 Ω : Tc = 25°C : Tc = 125°C (Note 1) 0.3 0.1 ton td (off) 0.03 tr 0.01 1 3 10 30 100 Gate resistance Switching time 1 toff, tf, td (off) – RG (μs) td (off) 0.03 tf 10 30 100 Gate resistance 10 toff 0.1 tf 0.03 4 Gate resistance 100 RG 8 12 Switching loss 10 30 300 3 Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C 1 (Note 2) 4 20 (A) Eon, Eoff – IC Eon 0.1 Eoff 4 8 12 Collector current IC (Ω) 16 0.3 0.03 0 1000 (A) Common emitter VCC = 300 V VGG = 15 V RG = 33 Ω : Tc = 25°C : Tc = 125°C (Note 1) Collector current IC Eoff 3 0.3 20 td (off) (Ω) Eon 0.3 1 0.01 0 1000 Eon, Eoff (mJ) Eon, Eoff (mJ) 300 Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 2) 1 0.1 1 RG 16 toff, tf, td (off) – IC 3 Eon, Eoff – RG Switching loss 3 12 Switching time 0.1 10 8 10 toff 3 4 Collector current IC Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 1) 0.3 0.01 1 Switching loss 1000 Switching time toff, tf, td (off) 3 300 (Ω) Switching loss Switching time toff, tf, td (off) (μs) 10 RG 0.01 0 16 20 (A) 2006-11-01 GT20J321 VCE, VGE – QG C – VCE 100 Coes 3 1 3 Cres 10 30 100 Collector-emitter voltage 300 300 12 300 200 8 VCE = 100 V 100 4 0 0 1000 20 VCE (V) 40 60 100 Common Reverse recovery current Irr (A) Forward current IF (A) collector VGE = 0 20 Tc = 125°C 25 10 −40 0.5 1 100 120 0 140 trr, Irr – IF IF – V F 0 0 80 Gate charge QG (nC) 40 30 200 1.5 2 Forward voltage VF 2.5 30 10 300 trr 100 Irr 3 30 1 0 3 1000 Common collector di/dt = −100 A/μs VGE = 0 : Tc = 25°C : Tc = 125°C (ns) 10 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 16 5 10 Safe Operating Area 10 20 15 Forward current IF (V) trr 30 400 Reverse recovery time Capacitance C 300 Collector-emitter voltage (pF) 1000 VCE (V) Cies 3000 20 Common emitter RL = 15 Ω Tc = 25°C VGE (V) 500 Gate-emitter voltage 10000 (A) Reverse Bias SOA 100 100 30 (A) 50 μs* 10 100 μs* Collector current IC Collector current IC (A) IC max (pulse)* 30 IC max (continuous) DC operation 3 *: Single pulse 1 1 ms* Tc = 25°C Curves must be 0.3 derated linearly 3 1 0.3 10 ms* with increase in 10 temperature. 0.1 1 3 10 30 Collector-emitter voltage 100 300 0.1 1 1000 VCE (V) Tj ≤ 125°C VGE = 15 V RG = 33 Ω 3 10 30 Collector-emitter voltage 5 100 300 1000 VCE (V) 2006-11-01 Transient thermal resistance rth (t) (°C/W) GT20J321 10 10 10 10 10 10 10 rth (t) – tw 2 1 FRD 0 IGBT −1 −2 −3 −4 10 Tc = 25°C −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 6 2006-11-01 GT20J321 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-01