TLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−2,TLP621−4 Programmable Controller AC / DC−Input Module Solid State Relay Unit in mm The TOSHIBA TLP621, −2 and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621−2 offers two isolated channels in an eight lead plastic DIP, which the TLP621−4 provides four isolated channels in a sixteen plastic DIP. • Collector−emitter voltage: 55 V (min.) • Current transfer ratio: 50% (min.) TOSHIBA 11−5B2 Weight: 0.26 g Rank GB: 100% (min.) Pin Configurations (top view) TLP621-2 TLP621 TLP621-4 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 1: Anode 2: Cathode 3: Emitter 4: Collector 1, 3: Anode 2, 4: Cathode 5, 7: Emitter 6, 8: Collector TOSHIBA 11−10C4 Weight: 0.54 g 1, 3, 5, 7: Anode 2, 4, 6, 8: Cathode 9, 11, 13, 15: Emitter 10, 12, 14, 16: Collector TOSHIBA 11−20A3 Weight: 1.1 g 1 2007-10-01 TLP621,TLP621−2,TLP621−4 ● Current Transfer Ratio Type TLP621 TLP621−2 TLP621−4 Classi− fication *1 Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Marking Of Classification Min. Max. (None) 50 600 Blank, Y, Y , G, G , B, B , GB Rank Y 50 150 Y, Y Rank GR 100 300 G, G Rank BL 200 600 B, B Rank GB 100 600 G, G , B, B , GB (None) 50 600 Blank, GR, BL, GB Rank GB 100 600 GR, BL, GB ■ ■ ■ ■ ■ ■ ■ ■ *1: Ex. rank GB: TLP621 (GB) (Note) Application type name for certification test, please use standard product type name, i.e. TLP621 (GB): TLP621 TLP621−2 (GB): TLP621−2 Made In Japan Made In Thailand UL recognized E67349 *2 E152349 *2 BSI approved 6508, 7445 *3 6505, 7445 *3 SEMKO approved 9735090 / 01 *4 *2 *3 *4 ― UL1577 BS EN60065: 2002, BS EN60950-1: 2002 EN60950 (approved is TLP621 only) 2 2007-10-01 TLP621,TLP621−2,TLP621−4 • Option (D4) type VDE approved: DIN EN 60747-5-2, certificate no. 40009302 Maximum operating insulation voltage: 890 VPK Highest permissible over voltage: 8000 VPK (Note) • When a EN 60747-5-2 approved type is needed, please designate the “Option (D4)” Creepage distance Clearance Insulation thickness 7.62 mm pich standard type : 6.4 mm (min.) : 6.4 mm (min.) : 0.4 mm (min.) 10.16 mm pich (LF2) type 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) 3 2007-10-01 TLP621,TLP621−2,TLP621−4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol Forward current LED Forward current derating TLP621−2 TLP621−4 Unit IF 60 50 mA ΔIF /°C −0.7 (Ta > 39°C) −0.5 (Ta = 25°C) mA /°C Pulse forward current IFP 1 (100μs pulse, 100pps) Power dissipation PD 100 70 mW ΔPD /°C −1.0 −0.7 mW /°C Power dissipation derating Detector TLP621 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 55 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW ΔPC /°C −1.5 −1.0 mW /°C Collector power dissipation derating (1 circuit, Ta ≥ 25°C) Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature Tsol 260 (10 s) °C Total package power dissipation PT 250 150 mW ΔPT /°C −2.5 −1.5 mW /°C Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (Note 1) BVS 5000 (AC, 1min., R.H.≤ 60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 20 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 4 2007-10-01 TLP621,TLP621−2,TLP621−4 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 — pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 — — V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 24 V — 10 100 nA VCE = 24 V, Ta = 85°C — 2 50 μA V = 0, f = 1 MHz — 10 — pF MIn. Typ. Max. Unit 50 — 600 100 — 600 — 60 — 30 — — — — 0.4 — 0.2 — — — 0.4 Min. Typ. Max. Unit — 0.8 — pF — Ω Collector dark current ICEO Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Symbol IC / IF IC / IF (sat) Test Condition IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 0.4 V Rank GB Rank GB IC = 2.4 mA, IF = 8 mA Collector−emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB % % V Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS 12 1×10 10 14 5000 — — AC, 1 second, in oil — 10000 — DC, 1 minute, in oil — 10000 — 5 Vrms Vdc 2007-10-01 TLP621,TLP621−2,TLP621−4 Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Test Condition Min. Typ. Max. — 2 — — 3 — — 3 — VCC = 10 V, IC = 2 mA RL = 100Ω Turn−off time toff — 3 — Turn−on time tON — 2 — — 15 — — 25 — Storage time tS Turn−off time tOFF RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA Unit μs μs Fig. 1 Switching time test circuit IF RL IF VCC tS VCE VCC 4.5V VCE 0.5V tON 6 tOFF 2007-10-01 TLP621,TLP621−2,TLP621−4 100 80 80 Allowable forward current IF (mA) Allowable forward current IF (mA) 100 60 40 20 0 -20 0 20 40 60 Ambient temperature TLP621 80 Ta 100 40 20 (°C) 0 20 40 TLP621-2 TLP621-4 PC – Ta 120 200 100 160 120 80 40 0 20 40 TLP621 120 (°C) PC – Ta 60 40 60 80 Ta 100 0 -20 120 0 20 40 TLP621-2 TLP621-4 IFP (mA) 1000 500 Pulse forward current 300 100 50 30 3 10-2 3 Duty cycle ratio 10-1 3 (°C) Ta = 25°C 500 300 100 50 30 10-3 3 10-2 3 Duty cycle ratio 7 120 1000 3 DR Ta 100 Pulse width ≤ 100μs 10 100 80 IFP – DR 3000 Pulse width ≤ 100μs 10-3 60 Ambient temperature (°C) Ta = 25°C IFP (mA) Ta 100 80 IFP – DR 3000 Pulse forward current 80 20 Ambient temperature 10 3 60 Ambient temperature 240 0 -20 IF – Ta 60 0 -20 120 Allowable collector power dissipation PC (mW) Allowable collector power dissipation PC (mW) TLP621-2 TLP621-4 IF – Ta TLP621 10-1 3 100 DR 2007-10-01 TLP621,TLP621−2,TLP621−4 IF – V F 100 ΔVF / ΔTa – IF Ta = 25°C Forward voltage temperature coefficient ΔVF / ΔTa (mV /°C) Forward current IF (mA) 50 30 10 5 3 1 0.5 0.3 0.1 0.4 0.6 1.0 0.8 1.2 Forward voltage VF 1.4 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1.6 1 0.3 (V) Forward current IFP – VFP ID (μA) 100 50 Dark current IFP (mA) Pulse forward current Ta = 25°C 30 10 5 3 1.2 0.8 1.6 Pulse forward voltage 2.0 VFP 100 10-1 10-2 10-3 10-4 0 2.4 10V 5V VCE = 24V (V) Ambient temperature IC (mA) 30mA 20mA Collector current IC (mA) Collector current 50mA 15mA PC (MAX.) 20 IF = 5mA 2 4 8 6 Collector-emitter voltage VCE 50mA 25 60 10mA Ta 160 (°C) IC – VCE Ta = 25°C 40 120 80 40 IC – VCE 80 0 0 (mA) 101 Pulse width ≤ 10μs 500 Repetitive 300 Frequency = 100Hz 0.4 IF 30 ID – Ta 1000 1 0 10 3 30mA 20mA 20 15 10mA 10 5mA 5 IF = 2mA 0 0 10 0.2 0.4 0.6 0.8 Collector-emitter voltage (V) 8 Ta = 25°C 40mA 1.0 VCE 1.2 1.4 (V) 2007-10-01 TLP621,TLP621−2,TLP621−4 IC – IF IC / IF – IF 500 VCE = 5V 30 VCE = 0.4V IC / IF (%) Ta = 25°C 50 10 Sample A Current transfer ratio Collector current IC (mA) 100 5 3 Sample B 1 0.5 0.3 300 Sample A 100 Sample B 50 30 Ta = 25°C VCE = 5V VCE = 0.4V 10 5 0.3 1 3 Forward current 0.1 30 10 100 IF (mA) 0.05 0.03 0.3 1 3 10 Forward current 30 VCE (sat) – Ta 100 0.20 IF (mA) IF = 5mA Collector-emitter saturation Voltage VCE (sat) (V) IC = 1mA IC – Ta 100 VCE = 5V 30 10mA 0.12 0.08 0.04 5mA 10 0 0 -20 5 20 40 80 60 Ambient temperature Ta 100 (°C) 3 Switchingtime – RL 1mA 1000 1 0.5 500 IF = 0.5mA 0.1 (μs) 0.3 -20 0 20 40 Ambient temperature 60 Ta 80 (°C) 100 Switching time Collector current IC (mA) 25mA 50 0.16 Ta = 25°C IF = 16mA VCC = 5V 300 tOFF 100 50 ts 30 10 5 tON 3 1 1 3 10 Load resistance 9 30 RL 100 300 (kΩ) 2007-10-01 TLP621,TLP621−2,TLP621−4 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2007-10-01