XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package ■ Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-89 package makes high density mounting possible. Low on-state resistance: Rds(on)=0.45Ω(Vgs=-4.5V) Rds(on)=0.8Ω(Vgs=-2.5V) Ultra high-speed switching Operational Voltage: -2.5V High density mounting: SOT-89 ■ Pin Configuration ■ Pin Assignment ● Notebook PCs ● Cellular and portable phones ● On-board power supplies ● Li-ion battery systems u 1 2 3 G D S PIN NUMBER PIN NAME FUNCTION 1 G Gate 2 D Drain 3 S Source SOT-89 (TOP VIEW) ■ Absolute Maximum Ratings ■ Equivalent Circuit 1 2 P-Channel MOS FET (1 device built-in) 3 PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss -20 V Gate-Source Voltage Vgss ±12 V Drain Current (DC) Id -1.5 A Drain Current (Pulse) Idp -4.5 A Reverse Drain Current Idr -1.5 A Continuous Channel Power Dissipation (note) Pd 2 W Channel Temperature Tch 150 : Storage Temperature Tstg -55~150 : Note: When implemented on a glass epoxy PCB 506 Ta=25: ■ Electrical Characteristics DC characteristics Ta=25: PARAMETER Drain Cut-off Current SYMBOL Idss CONDITIONS Vds=-20V, Vgs=0V Gate-Source Leakage Current Igss Gate-Source Cut-off Voltage Vgs(off) Vgs=±12V, Vds=0V Id=-1mA, Vds=-10V MIN TYP -0.5 Rds(on) Id=-0.8A, Vgs=-4.5V Id=-0.8A, Vgs=-2.5V 0.35 0.6 Forward Transfer Admittance (note) Yfs Id=-0.8A, Vds=-10V 1.5 Body Drain Diode Forward Voltage Vf If=-1.5A, Vgs=0V SYMBOL CONDITIONS Drain-Source On-state Resistance (note) MAX -10 UNITS µA ±1 µA V Ω -1.2 0.45 0.8 Ω S -1.1 V MAX UNITS Note: Effective during pulse test. Dynamic characteristics PARAMETER Ta=25: Input Capacitance Ciss Output Capacitance Coss Feedback Capacitance Crss MIN Vds=-10V, Vgs=0V f=1MHz TYP 180 pF 100 pF pF 35 u Switching characteristics Ta=25: PARAMETER SYMBOL Turn-on Delay Time td (on) Rise Time tr Turn-off Delay Time Fall Time td (off) tf CONDITIONS MIN Vgs=-5V, Id=-0.8A Vdd=-10V TYP MAX UNITS 10 ns 15 ns 20 30 ns ns Thermal characteristics PARAMETER Thermal Resistance (channel-surroundings) SYMBOL CONDITIONS Rth (ch-a) Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS ˚C/W 507 XP162A02D5PR Power MOS FET ■ Electrical Characteristics Drain Current vs. Drain /Source Voltage -4.5 -4.0 -4.5V -4V -3.0 Toor＝25℃ -3.5 Drain Current:Id (A) -3.5 パルステスト , Vds＝-10V -4.5 -5V -4.0 Drain Current:Id (A) Drain Current vs. Gate/Source Voltage Pulse Test, Ta=25: -3V -3.5V -2.5 -2.5V -2.0 -1.5 -2V -1.0 -0.5 -3.0 -55℃ -2.0 -1.5 -1.0 -0.5 Vgs＝-1.5V 0.0 0.0 0 -1 -2 0 -3 -1 Drain/Source On-State Resistance vs. Gate/Source Voltage Drain/Source On-State Resistance :Rds (on) (Ω) Drain /Source On-State Resistance :Rds (on) (Ω) 1.5 1.0 -1.5A Id＝-0.8A 0.5 Vgs＝-2.5V 1 -4.5V 0.1 0 -2 -4 -6 -8 0 -10 -1 -2 Pulse Test Id＝-1.5A 1.0 -0.8A 0.5 -0.8A,-1.5A -4.5V 0.0 -60 -5 Vds=-10V, Id=-1mA 0.6 Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V) 1.5 Vgs＝-2.5V -4 Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Drain/Source On-State Resistance vs. Ambient Temp. 2.0 -3 Drain Current:Id (A) Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance :Rds (on) (Ω) -5 -4 Pulse Test, Ta=25: 10 0.0 0.4 0.2 0.0 -0.2 -0.4 -0.6 -30 0 30 60 90 Ambient Temperature:Topr (:) 508 -3 Drain/Source On-State Resistance vs. Drain Current Pulse Test, Ta=25: 2.0 -2 Gate/Source Voltage:Vgs (V) Drain/Source Voltage:Vds (V) u 125℃ -2.5 120 150 -60 -30 0 30 60 90 Ambient Temperature:Topr (:) 120 150 ■ Electrical Characteristics Drain/Source Voltage vs. Capacitance Switching Time vs. Drain Current Vgs=0V, f=1MHz 1000 Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≦1% 1000 Switching Time:t (ns) Capacitance:Ciss, Coss, Crss (pF) tf Ciss Coss 100 Crss 100 td（off） tr 10 td（on） 10 1 0 -5 -10 -15 -0.01 -20 -0.1 Drain/Source Voltage:Vds (V) Gate/Source Voltage vs. Gate Charge -10 Reverse Drain Current vs. Source/Drain Voltage Vds=-10V, Id=-0.8A -10 -1 Drain Current:Id (A) Pulse Test -4.5 Reverse Drain Current:Idr (A) Gate/Source Voltage:Vgs (V) -4.0 -8 -6 -4 -2 u -3.5 -3.0 -2.5 Vgs＝-4.5A -2.0 -1.5 -1.0 -2.5V 0,4.5V -0.5 0 0.0 0 2 4 6 8 10 0 Gate Charge:Qg (nc) -0.2 -0.4 -0.6 -0.8 -1 Source/Drain Voltage:Vsd (V) Standardized Transition Thermal Resistance:γs(t) Standardized Transition Thermal Resistance vs. Pulse Width Rth (ch-a)=62.5˚C/W, (Implemented on a glass epoxy PCB) 10 1 Single Pulse 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width:PW (sec) 509