NXP BUK217-50Y Single channel high-side topfetâ ¢ Datasheet

BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
Rev. 01 — 17 March 2003
Product data
1. Product profile
1.1 Description
Monolithic temperature and overload protected single high-side power switch based
on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic
package.
Product availability:
BUK212-50Y in SOT263B-01
BUK217-50Y in SOT426 (D2-PAK).
1.2 Features
■
■
■
■
■
■
■
Very low quiescent current
Power TrenchMOS™
Overtemperature protection
Over and undervoltage protection
Reverse battery protection
Low charge pump noise
Loss of ground protection
■
■
■
■
■
■
■
CMOS logic capability
Negative load clamping
Overload protection
ESD protection for all pins
Diagnostic status indication
Operating voltage down to 5.5 V
Current limitation.
1.3 Applications
■ 12 V and 24 V grounded loads
■ Inductive loads
■ High inrush current loads
■ Replacement for relays and fuses.
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
Min
Max
Unit
RBLon
battery-load on-state resistance
-
14
mΩ
IL
load current
-
44
A
IL(nom)
nominal load current (ISO)
25
-
A
IL(lim)
self-limiting load current
47
100
A
VBG(oper)
battery-ground operating voltage
5.5
35
V
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
2. Pinning information
mb
mb
B
S
I
1 2 3 4 5
1
5
MBL431
Fig 1. Pinning; SOT426 (D2-PAK).
03pa56
P
L
G
MBL264
Fig 2. Pinning; SOT263B-01.
Fig 3. Symbol; (HSS) TOPFETTM.
2.1 Pin description
Table 2:
Pin description
Symbol
Pin
I/O
Description
G
1
-
circuit common ground
I
2
I
battery
B
3
-
S
4
O
status
L
5
O
load
-
mb
-
[1]
[2]
[2]
mounting base
It is not possible to make a connection to pin 3 of the SOT426 package.
The battery is connected to the mounting base.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
input
[1] [2]
Rev. 01 — 17 March 2003
2 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
3. Block diagram
battery
4
status
3/mb
VOLTAGE REGULATOR
CHARGE PUMP
SHORT CIRCUIT
PROTECTION
POWER
MOSFET
CURRENT LIMIT
OVERVOLTAGE
PROTECTION
2
input
CONTROL
LOGIC
UNDERVOLTAGE
PROTECTION
load
LOW CURRENT
DETECT
5
TEMPERATURE
SENSOR
03pa33
RG
1
ground
Fig 4. Elements of the high-side TOPFET switch.
4. Functional description
Table 3:
Truth table
Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; LC = low current or open circuit load; SC = short circuit; OT = overtemperature [1].
Input
[1]
Supply
Load
Load
Status
Operating mode
UV
OV
LC
SC
OT
output
L
X
X
X
X
X
OFF
H
off
H
0
0
0
0
0
ON
H
on & normal
H
0
0
1
0
0
ON
L
on & low current detect
H
1
0
X
X
X
OFF
H
supply undervoltage lockout
H
0
1
X
0
0
OFF
H
supply overvoltage shutdown
H
0
0
0
1
X
OFF
L
SC tripped
H
0
0
0
0
1
OFF
L
OT shutdown
The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold.
See “Overtemperature protection” characteristics in Table 6.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
3 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
5. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VBG
battery-ground supply voltage
IL
load current
Tmb ≤ 90 °C
Ptot
total power dissipation
Tmb ≤ 25 °C
-
115
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
-
+150
°C
Tmb
mounting base temperature
-
260
°C
-
16
V
-
32
V
during soldering (≤ 10 s)
Min
Max
Unit
-
50
V
-
44
A
Reverse battery voltage
VBGR
reverse battery-ground supply
voltage
VBGRR
repetitive reverse battery-ground
supply voltage
[1]
External resistor
RI
RS
input resistor
[2]
3.3
-
kΩ
status resistor
[3]
3.3
-
kΩ
−5
+5
mA
−50
+50
mA
−5
+5
mA
δ ≤ 0.1; tp = 300 µs
−50
+50
mA
Tj = 150 °C prior to turn-off; IL = 20 A
-
460
mJ
Human body model; C = 100 pF;
R = 1.5 kΩ
-
2
kV
Input current
II
input current
IIRM
repetitive peak input current
δ ≤ 0.1; tp = 300 µs
Status current
IS
status current
ISRM
repetitive peak status current
Inductive load clamping
EBL(CL)S
non-repetitive battery-load
clamping energy
Electrostatic discharge
Vesd
[1]
[2]
[3]
electrostatic discharge voltage
Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load
must limit the reverse current. The internal ground resistor limits the reverse battery ground current.
To limit input current during reverse battery and transient overvoltages.
To limit status current during reverse battery and transient overvoltages.
6. Thermal characteristics
Table 5:
Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
mounting base
-
0.86
1.08
K/W
thermal resistance from junction to mounted on printed circuit board;
ambient
minimum footprint; SOT426
-
50
-
K/W
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
4 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
7. Static characteristics
Table 6:
Static characteristics
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IG = 1 mA; Figure 6
50
55
65
V
Clamping voltage
VBG(CL)
battery-ground clamping voltage
VBL(CL)
battery-load clamping voltage
IL = IG = 1 mA
50
55
65
V
VLG(CL)
load-ground clamping voltage
IL = 10 mA; Figure 12 and 14
−18
−23
−28
V
−20
−25
−30
V
5.5
-
35
V
Tmb = 150 °C
-
-
20
µA
Tmb = 25 °C
-
0.1
2
µA
Tmb = 150 °C
-
-
20
µA
Tmb = 25 °C
-
0.1
1
µA
IL = 20 A; tp = 300 µs
[1]
Supply voltage
VBG(oper)
battery-ground operating voltage
Current
IB
IL(off)
battery quiescent current
off-state load current
VLG = 0 V; Figure 10
[2]
VBL = VBG
IG(on)
operating current
Figure 6
IL(nom)
nominal load current (ISO)
VBL = 0.5 V; Tmb = 85 °C
-
2
4
mA
25
-
-
A
Tmb = 25 °C
-
10
14
mΩ
Tmb = 150 °C
-
-
25
mΩ
-
13
18
mΩ
[3]
Resistance [4]
RBLon
battery-load on-state resistance
9 V ≤ VBG ≤ 35 V; IL = 20 A; Figure 5
VBG = 6 V; IL = 20 A
Tmb = 25 °C
Tmb = 150 °C
[5]
-
-
33
mΩ
95
150
190
Ω
20
90
160
µA
ground resistance
IG = 10 mA
II
input current
VIG = 5 V
VIG(CL)
input-ground clamping voltage
II = 200 µA
5.5
7
8.5
V
VIG(on)
input-ground turn-on voltage
Figure 9
-
2.4
3
V
VIG(off)
input-ground turn-off voltage
1.5
2.1
-
V
VIG(on)(hys)
input-ground turn-on hysteresis
-
0.3
-
V
II(on)
input turn-on current
VIG = 3 V
-
-
100
µA
II(off)
input turn-off current
VIG = 1.5 V
10
-
-
µA
−40 °C ≤ Tmb ≤ +150 °C
0.55
-
4.4
A
Tmb = 25 °C; Figure 15
0.65
1.8
2.9
A
-
0.44
-
A
RG
Input [6]
Low current detection
[7][10]
IL(LC)
load low current detect
IL(LC)(hys)
load low current detect hysteresis
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
5 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
Table 6:
Static characteristics…continued
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
2
4.2
5.5
V
-
0.5
-
V
35
45
50
V
-
1
-
V
47
74
100
A
8
10
12
V
15
20
25
V
150
170
190
°C
-
10
-
°C
5.5
7
8.5
V
Tmb = −40 °C
-
-
1
V
Tmb = 25 °C
-
0.7
0.8
V
-
-
15
µA
-
0.1
1
µA
-
47
-
kΩ
Undervoltage [10]
VBG(uv)
[8]
battery-ground undervoltage
VBG(uv)(hys) battery-ground undervoltage
hysteresis
Overvoltage [10]
VBG(ov)
[9]
battery-ground overvoltage
VBG(ov)(hys) battery-ground overvoltage
hysteresis
Overload protection [10]
IL(lim)
self-limiting load current
VBG ≥ 9 V; VBL = VBG; Figure 8
[10][11]
Short circuit load protection
VBL(off)
battery-load turn-off voltage
[11]
VBG = 16 V; Figure 11
[12]
VBG = 35 V
Overtemperature protection [10][11]
Tj(th)
threshold junction temperature
Tj(th)(hys)
threshold junction temperature
hysteresis
[13]
Status [6][10]
VSG(CL)
status-ground clamping voltage
IS = 100 µA
VSG(L)
status-ground low voltage
IS = 100 µA; Figure 7
IS(off)
status leakage current
VSG = 5 V
Tmb = 150 °C
Tmb = 25 °C
status resistor
RS
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
connected externally; VSG = 5 V
[14]
For a high-side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
This is the current drawn from the supply when the input is LOW, and includes leakage current to the load.
Defined as in ISO 10483-1. For comparison purposes only.
The supply and input voltages for the RBLon tests are continuous. The specified pulse duration is tp = 300 µs, and refers only to the
applied load current.
RG is a resistor incorporated internally in the package.
9 V ≤ VBG ≤ 16 V
9 V ≤ VBG ≤ 35 V. A low current load can be detected in the on-state.
Undervoltage sensor causes the device to switch off and reset.
Overvoltage sensor causes the device to switch off to protect the load.
See Table 3 “Truth table”
5.5 V ≤ VBG ≤ 35 V
The battery-to-load threshold voltage for short circuit is approximately proportional to the battery supply voltage.
After cooling below the reset temperature the switch will resume normal operation.
The status output is an open drain transistor and requires an external pull-up circuit to indicate a logic HIGH.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
6 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
03pa65
25
RBLon
(mΩ)
Tj = 150 °C
20
15
Tj = 25 °C
10
Tj = -40 °C
5
0
0
8
16
24
32
40
VBG (V)
IL = 20 A; VIG = 5 V
Fig 5. Battery-load on-state resistance as a function of battery-ground supply voltage; typical values.
03pa55
4
IG
(mA)
clamping
3
overvoltage
shutdown
undervoltage
shutdown
Tj = −40 °C
Tj = 25 °C
2
Tj = 150 °C
1
0
0
25
50
VBG (V)
75
VIG = 5 V
Fig 6. Supply current characteristics: operating current as a function of battery-ground supply voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
7 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
03pa38
4
03pa63
80
IL
(A)
IS
(mA)
60
3
VBL(off)
2
40
1
20
0
0
3
2
1
4
VBG = 13 V; VIG = 5 V; Tj = 25 °C
0
4
8
VBL (V)
12
VBG = 16 V; VIG = 5 V; Tmb = 25 °C (the device trips after
200 µs (typical), and status goes LOW).
Fig 7. Status current as a function of status-ground
voltage; typical values.
03pa36
3.5
VIG
(V)
3
0
VSG (V)
Fig 8. Load current limiting as a function of
battery-load voltage; typical values.
03pa64
8
IB
(µ A)
max
6
2.5
4
VIG (on)
2
VIG (off)
1.5
1
-50
2
min
0
50
100
150
200
Tj (°C)
9 V ≤ VBG ≤ 16 V
0
-50
50
100
150
200
Tj (°C)
VBG = 16 V
Fig 9. Input-ground voltage as a function of junction
temperature.
Fig 10. Battery quiescent current as a function of
junction temperature; typical values.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
0
Rev. 01 — 17 March 2003
8 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
03pa40
30
VBL(off)
max
(V)
typ
20
min
10
0
10
0
20
30
50
40
VBG (V)
VIG = 5 V; −40 °C ≤ Tmb ≤ +150 °C
Fig 11. Battery-load turn-off voltage as a function of battery-ground voltage.
8. Dynamic characteristics
Table 7:
Switching characteristics
Tmb = 25 °C; VBG = 13 V; resistive load RL = 13 Ω. Figure 13
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
to 10% VL
-
40
90
µs
Turn-on measured from the input going HIGH
td(on)
turn-on delay time
dV/dton
rising slew rate
30 to 70% VL
-
0.5
1.0
V/µs
ton
turn-on switching time
to 90% VL
-
180
310
µs
to 90% VL
-
75
120
µs
Turn-off measured from the input going LOW
td(off)
turn-off delay time
dV/dtoff
falling slew rate
70 to 30% VL
-
0.5
1.0
V/µs
toff
turn-off switching time
to 10% VL
-
105
160
µs
Table 8:
Status response times
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Measured from when the input goes HIGH
td(sc)
short circuit response time
VBL > VBL(off); Figure 16
-
180
250
µs
td(lc)
low current detect response time
IL < IL(LC); Figure 15
-
200
-
µs
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
9 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
Table 9:
Capacitances
Tmb = 25 °C; f = 1 MHz; VIG = 0 V.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cig
input-ground capacitance
VBG = 13 V
-
15
20
pF
Cbl
battery-load output capacitance
VBL = 13 V
-
635
900
pF
Csg
status-ground capacitance
VSG = 5 V
-
11
15
pF
ton
toff
90%
VL
dV/dton
dV/dtoff
10%
0V
RS
5V
VBG
RI
VSG
P
0V
VSG
LL
VL
VIG
5V
VIG
RL
0
03pa51
03pa45
VBG = 13 V; VIG = 5 V and Tmb = 25 °C
Fig 12. Schematic drawing of the switching circuit.
VL
Fig 13. Resistive switching waveforms and definitions.
0V
ton
IL(LC)
EBL(CL)S
toff
90%
VL
IL
0V
0A
5V
10%
td(lc)
5V
VSG
VSG
0.7 V
0V
0.7 V
0V
5V
5V
VIG
VIG
0
0
03pa48
03pa50
Fig 14. Switching a large inductive load.
Fig 15. Low current detection waveforms.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
10 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
td(sc)
IL
0A
5V
VSG
0.7 V
0V
5V
VIG
0
03pa49
VBL ≥ VBL(off)
Fig 16. Short circuit protection waveforms.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
11 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
9. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads
(one lead cropped)
SOT426
A
A1
E
D1
mounting
base
D
HD
3
1
2
4
e
e
Lp
5
b
e
c
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
1.70
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
SOT426
Epoxy meets UL94 V0 at 1/8’’. Net mass: 1.5g. For soldering guidelines and surface mount footprint design, please refer to
Data Handbook SC18.
Fig 17. SOT426 (D2-PAK).
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
12 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
Plastic single-ended package; heatsink mounted; 1 mounting hole;
5-lead TO-220 lead form option
SOT263B-01
E
p1
A
∅p
A1
q
D1
mounting
base
D
L3
L1
R
L
L4
m
1
L2
5
e
b
R
w M
c
Q
Q1
Q2
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
mm
4.5
4.1
A1
b
1.39 0.85
1.27 0.70
c
D
D1
E
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
e
L
L1
L2
L3(1)
1.7
9.8
9.7
5.9
5.3
5.2
5.0
2.4
1.6
L4(2)
max.
m
∅p
p1
q
Q
Q1
Q2
R
w
0.5
0.8
0.6
3.8
3.6
4.3
4.1
3.0
2.7
2.0
4.5
8.2
0.5
0.4
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
OUTLINE
VERSION
SOT263B-01
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
5-lead (option)
TO-220
ISSUE DATE
01-01-11
Refer to mounting instructions for TO-220 packages. Epoxy meets UL94 VO at 1/8’’. Net mass: 2g
Fig 18. SOT263B-01.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
13 of 16
Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
10. Revision history
Table 10:
Revision history
Rev Date
01
20030317
CPCN
Description
-
Product data (9397 750 10768).
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
14 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
11. Data sheet status
Level
Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
13. Disclaimers
TOPFET — is a trademark of Koninklijke Philips Electronics N.V.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10768
Rev. 01 — 17 March 2003
15 of 16
Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
Contents
1
1.1
1.2
1.3
1.4
2
2.1
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
© Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 17 March 2003
Document order number: 9397 750 10768
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