PHILIPS BA315 Low-voltage stabistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BA315
Low-voltage stabistor
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 Mar 21
Philips Semiconductors
Product specification
Low-voltage stabistor
BA315
FEATURES
DESCRIPTION
• Low-voltage stabilization
Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass
package.
• Forward voltage range:
480 mV to 1050 mV
• Total power dissipation:
max. 350 mW.
handbook, halfpage
k
APPLICATIONS
a
• Low-voltage stabilization e.g.
– Bias stabilizer in class-B output
stages
MAM246
Diodes are type branded.
– Clipping
– Clamping
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
– Meter protection.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
5
IF
continuous forward current
−
100
mA
Ptot
total power dissipation
−
350
mW
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
1996 Mar 21
Tamb = 25 °C
2
V
Philips Semiconductors
Product specification
Low-voltage stabistor
BA315
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
see Fig.2
IF = 0.1 mA
480
−
540
mV
IF = 1 mA
590
−
660
mV
IF = 5 mA
670
−
740
mV
IF = 10 mA
710
−
790
mV
IF = 100 mA
875
−
1050
mV
1500
nA
IR
reverse current
VR = 5 V
−
−
rdif
differential resistance
IF = 1 mA; f = 1 kHz
−
50
−
Ω
IF = 10 mA; f = 1 kHz
−
6
7
Ω
−
mV/K
SF
temperature coefficient
IF = 1 mA
−
−2.1
Cd
diode capacitance
VR = 0 V; f = 1 MHz
−
−
3
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
8 mm from the body
300
K/W
Rth j-a
thermal resistance from junction to ambient
maximum lead length
600
K/W
1996 Mar 21
3
Philips Semiconductors
Product specification
Low-voltage stabistor
BA315
GRAPHICAL DATA
MBG520
102
handbook, halfpage
IF
(mA)
(1)
(2)
10
1
10−1
0.2
0.4
0.6
0.8
1.0
1.2
VF (V)
Tj = 25 °C.
(1) Minimum values.
(2) Maximum values.
Fig.2
1996 Mar 21
Forward current as a function of
forward voltage.
4
Philips Semiconductors
Product specification
Low-voltage stabistor
BA315
PACKAGE OUTLINE
andbook, full pagewidth
0.56
max
1.85
max
4.25
max
25.4 min
25.4 min
MLA428 - 1
Dimensions in mm.
Diodes are type branded.
Fig.3 SOD27 (DO-35).
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 21
5
Similar pages