Powerex Power CM900HB-90H Single igbtmodâ ¢ hvigbt 900 amperes/4500 volt Datasheet

CM900HB-90H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™
HVIGBT
900 Amperes/4500 Volts
A
D
L
L
L
S
V NUTS
(6 TYP)
P
C
C
C
E
E
E
F
E
CM
B
Q
C
E
G
R
U NUTS
(3 TYP)
T
H
W
(8 TYP)
J
K
N
N
X
C
C
C
E
E
E
C
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
C
G
E
Outline Drawing and Circuit Diagram
Dimensions
Inches
A
7.48
B
5.51
C
Millimeters
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor with a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Dimensions
Inches
Millimeters
190.0
M
0.51
13.0
140.0
N
2.42
61.5
1.50
38.0
P
0.59
15.0
D
6.73
171.0
Q
1.57
40.0
E
4.88±0.01
124.0±0.25
R
0.20
5.2
F
1.57
40.0
S
1.16
29.5
G
0.79
20.0
T
1.10
28.0
H
0.80
20.25
U
M4 Metric
M4
J
1.62
41.25
V
M8 Metric
M8
K
3.13
79.4
W
0.28 Dia.
Dia. 7.0
L
2.24±0.01
57.0±0.25
X
0.20
5.0
Applications:
□ Traction
□ Medium Voltage Drives
□ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM900HB-90H is a 4500V (VCES),
900 Ampere Single IGBTMOD™
Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
900
90
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM900HB-90H
Single IGBTMOD™ HVIGBT
900 Amperes/4500 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM900HB-90H
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (VGE = 0V)
VCES
4500
Volts
Gate-Emitter Voltage (VCE = 0V)
VGES
±20
Volts
Collector Current (Tc = 25°C)
IC
900
Amperes
Peak Collector Current (Pulse)
ICM
1800*
Amperes
Diode Forward Current** (Tc = 25°C)
IE
900
Amperes
Diode Forward Surge Current** (Pulse)
IEM
1800*
Amperes
Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj ≤ 125°C)
PC
10000
Watts
Max. Mounting Torque M8 Terminal Screws
–
115
in-lb
Max. Mounting Torque M6 Mounting Screws
–
53
in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws
–
17
in-lb
Module Weight (Typical)
V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.)
–
2.2
kg
Viso
6000
Volts
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
–
–
18.0
mA
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 90mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
Gate Leakage Current
IC = 900A, VGE = 15V, Tj = 25°C
–
3.0
3.9*
Volts
IC = 900A, VGE = 15V, Tj = 125°C
–
3.3
–
Volts
Total Gate Charge
QG
VCC = 2250V, IC = 900A, VGE = 15V
–
7.5
–
µC
Emitter-Collector Voltage**
VEC
IE = 900A, VGE = 0V
–
4.0
5.2
Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM900HB-90H
Single IGBTMOD™ HVIGBT
900 Amperes/4500 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Min.
Typ.
–
162
–
nF
–
12.0
–
nF
–
3.6
–
nF
VCC = 2250V, IC = 900A,
–
–
2.4
µs
VGE1 = VGE2 = 15V,
–
–
2.4
µs
td(off)
RG = 10Ω
–
–
6.0
µs
tf
Resistive Load Switching Operation
–
–
1.2
µs
Diode Reverse Recovery Time**
trr
IE = 900A, diE/dt = -1800A/µs
–
–
Diode Reverse Recovery Charge**
Qrr
IE = 900A, diE/dt = -1800A/µs
–
360*
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
tr
Switching
Turn-off Delay Time
Times
Fall Time
Test Conditions
VGE = 0V, VCE = 10V
Max.
1.8
–
Units
µs
µC
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c) Q
Per IGBT
–
–
0.010
K/W
Thermal Resistance, Junction to Case
Rth(j-c) D
Per FWDi
–
–
0.020
K/W
Rth(c-f)
Per Module, Thermal Grease Applied
–
0.007
–
K/W
Contact Thermal Resistance, Case to Fin
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM900HB-90H
Single IGBTMOD™ HVIGBT
900 Amperes/4500 Volts
5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
4
3
2
1
Tj = 25°C
Tj = 125°C
5
4
3
2
1
0
0
500
1000
1500
0
2000
COLLECTOR CURRENT, IC, (AMPERES)
1000
1500
0.8
0.6
0.4
0.2
2000
1.0
0.8
0.6
0.4
0.2
0
10-3
10-2
10-1
10-1
5
VCC = 2250V
VGE = ±15V
RG = 10Ω
LS = 180nH
Tj = 125°C
Inductive Load Integrated
Over Range Of 10%
6
5
4
3
2
1
0
400
800
1200
3
2
1
0
1600
VCC = 2250V
VGE = ±15V
RG = 10Ω
LS = 180nH
Tj = 125°C
Inductive Load Integrated
Over Range of 10%
4
0
400
800
1200
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TURN-ON SWITCHING
SAFE OPERATING AREA (RBSOA)
(TYPICAL)
DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(TYPICAL)
0.8
0.6
VCC = 2250V
VGE = ±15V
RG = 10Ω
LS = 180nH
Tj = 125°C
Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions
0.4
0.2
COLLECTOR CURRENT, IC, (AMPERES)
2500
1.0
400
800
1200
EMITTER CURRENT, IE, (AMPERES)
1600
1600
2000
2000
1500
1000
VCC = 3000V
VGE = ±15V
RG = 10Ω
LS = 100nH
Tj = 125°C
500
0
0
100
HALF-BRIDGE TURN-OFF SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
TIME, (s)
1.2
0
10-2
HALF-BRIDGE TURN-ON SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
0
100
0
10-3
TIME, (s)
TURN-OFF SWITCHING ENERGY, Eoff, (J/P)
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.020 K/W
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.010 K/W
1.0
7
1.2
TURN-ON SWITCHING ENERGY, Eon, (J/P)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
500
1.2
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE =T15V
j = 25°C
Tj = 125°C
0
REVERSE RECOVERY ENERGY, Erec, (J/P)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
6
6
4
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
1500
1000
500
0
0
1000
2000
3000
4000
5000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
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