Diodes DMN3300U N-channel enhancement mode mosfet Datasheet

DMN3300U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
V(BR)DSS
RDS(ON)
Package
30V
0.15Ω @ VGS = 4.5V
0.2Ω @ VGS = 2.5V
0.25Ω @ VGS = 1.8V
0.3Ω @ VGS = 1.5V
SOT23
•
•
•
•
•
•
•
•
ID
TA = +25°C
2A
1.6A
1.4A
1.2A
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Applications
•
•
•
•
•
•
•
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
SOT23
D
G
Top View
S
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN3300U-7
Notes:
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
33N
Date Code Key
Year
Code
2007
U
2008
V
Month
Code
Jan
1
Feb
2
DMN3300U
Document number: DS31181 Rev. 5 - 2
2009
W
Mar
3
2010
X
Apr
4
YM
NEW PRODUCT
Product Summary
33N = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
2011
Y
May
5
2012
Z
Jun
6
1 of 5
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2013
A
Jul
7
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
September 2012
© Diodes Incorporated
DMN3300U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
30
±12
1.5
1.2
ID
A
2.0
1.6
8
1.6
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Units
V
V
IDM
IS
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Value
0.7
1.3
176
102
45
-55 to +150
PD
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
30
⎯
⎯
37
⎯
⎯
⎯
1
±10
V
μA
μA
VGS = 0V, ID = 100μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
0.5
⎯
1
V
RDS (ON)
⎯
100
140
185
240
150
200
250
300
mΩ
|Yfs|
VSD
⎯
⎯
5
0.8
⎯
1.1
S
V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 3.5A
VGS = 1.8V, ID = 1.5A
VGS = 1.5V, ID = 0.5A
VDS =5V, ID = 2.4A
VGS = 0V, I = 0.5A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
193
35
23
7
24
24
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
ns
VDD = 10V, RL = 10Ω
ID = 1A, VGEN = 4.5V, RG = 6Ω
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing
DMN3300U
Document number: DS31181 Rev. 5 - 2
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© Diodes Incorporated
DMN3300U
8
10
VDS = 5V
Pulsed
7
ID, DRAIN CURRENT (A)
8
NEW PRODUCT
6
4
6
5
TA = 150°C
TA = 125°C
4
T A = 85°C
3
2
2
1
0
TA = 25°C
TA = -55°C
0
0
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 2 Typical Transfer Characteristics
1
2.0
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
1.8
1.6
VGS = 1.5V
1.4
1.2
VGS = 2.5V
0.1
1.0
VGS = 4.5V
0.8
0.6
0.4
0.2
0
0.01
0.01
0.1
1
10
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
0.8
ID = 250µA
C, CAPACITANCE (pF)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.0
0.6
0.4
Ciss
0.2
Coss
Crss
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
DMN3300U
Document number: DS31181 Rev. 5 - 2
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0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
30
September 2012
© Diodes Incorporated
DMN3300U
100
10
-ID, DRAIN CURRENT (A)
IS, SOURCE CURRENT (A)
TA = 150°C
0.1
TA = 125°C
TA = 85°C
0.01
TA = 25°C
TA = -55°C
0.001
PW = 10µs
RDS(on)
Limited
10
1
DC
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.1
TJ(max) = 150°C
TA = 25°C
Single Pulse
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1
0.01
0.1
PW = 100µs
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 SOA, Safe Operation Area
100
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
RθJA = 178°C/W
Duty Cycle, D = t1/ t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 9 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
K1
D
J
F
G
DMN3300U
Document number: DS31181 Rev. 5 - 2
L
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DMN3300U
Suggested Pad Layout
NEW PRODUCT
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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Copyright © 2012, Diodes Incorporated
www.diodes.com
DMN3300U
Document number: DS31181 Rev. 5 - 2
5 of 5
www.diodes.com
September 2012
© Diodes Incorporated
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