NXP BLF7G22LS-130 Power ldmos transistor Datasheet

BLF7G22LS-130
Power LDMOS transistor
Rev. 01 — 2 February 2010
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
IDq
VDS
PL(AV)
ηD
ACPR
(dB)
(%)
(dBc)
18.5
32
−32[1]
34
−39[2]
Mode of operation
f
Gp
(MHz)
(mA)
(V)
(W)
2-carrier W-CDMA
2110 to 2170
950
28
30
1-carrier W-CDMA
2110 to 2170
950
28
33
18.5
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
„
„
„
„
„
„
„
„
„
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
BLF7G22LS-130
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Graphic symbol
1
1
3
[1]
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
BLF7G22LS-130
Name Description
Version
-
SOT502B
earless flanged LDMOST ceramic package; 2 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
<tbd>
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
5. Thermal characteristics
Table 5.
BLF7G22LS-130_1
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 °C; PL = 30 W
0.35 K/W
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Rev. 01 — 2 February 2010
Unit
© NXP B.V. 2010. All rights reserved.
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Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 1.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 150 mA
1.3
1.8
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
5
μA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
25
29.5
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
450
nA
gfs
forward transconductance
VDS = 10 V; ID = 7.5 A
-
10
11
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V;
ID = 5.25 A
-
0.1
0.16 Ω
7. Test information
Table 7.
Functional test information
Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
Parameter
PL(AV)
average output power
Conditions
Gp
power gain
IRL
input return loss
Min
Typ Max
Unit
-
30
-
W
PL(AV) = 30 W
17
18.5 -
dB
PL(AV) = 30 W
9
15
-
dB
ηD
drain efficiency
PL(AV) = 30 W
29
32
-
%
ACPR
adjacent channel power ratio
PL(AV) = 30 W
-
−32
−30
dBc
7.1 Ruggedness in class-AB operation
The BLF7G22LS-130 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 950 mA; PL = 130 W (CW); f = 2110 MHz.
BLF7G22LS-130_1
Product data sheet
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Rev. 01 — 2 February 2010
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BLF7G22LS-130
NXP Semiconductors
Power LDMOS transistor
7.2 1 Tone CW
001aal341
19
001aal342
60
Gp
(dB)
ηD
(%)
18
(1)
(1)
(2)
(2)
40
(3)
(3)
17
16
20
15
14
0
0
40
80
120
160
0
40
80
120
PL (W)
VDS = 28 V; IDq = 950 mA.
VDS = 28 V; IDq = 950 mA.
(1) f = 2110 MHz.
(1) f = 2110 MHz.
(2) f = 2140 MHz.
(2) f = 2140 MHz.
(3) f = 2170 MHz.
(3) f = 2170 MHz.
Fig 1.
160
PL (W)
Power gain as a function of load power;
typical values
Fig 2.
Drain efficiency as a function of load power;
typical values
7.3 1-carrier W-CDMA
001aal343
20
50
ηD
(%)
Gp
(dB)
19
40
Gp
001aal344
−20
ACPR
(dBc)
−30
30
18
−40
17
20
16
10
−50
ηD
15
0
0
10
20
30
40
50
60
70
PL(AV) (W)
−60
VDS = 28 V; IDq = 950 mA; f = 2140 MHz.
Fig 3.
Product data sheet
10
20
30
40
50
60
70
PL(AV) (W)
VDS = 28 V; IDq = 950 mA; f = 2140 MHz;
channel bandwidth = 5 MHz.
Power gain and drain efficiency as functions
of average load power; typical values
BLF7G22LS-130_1
0
Fig 4.
Adjacent power channel ratio as function of
average load power; typical values
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Rev. 01 — 2 February 2010
© NXP B.V. 2010. All rights reserved.
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BLF7G22LS-130
NXP Semiconductors
Power LDMOS transistor
001aal345
18.4
Gp
(dB)
001aal346
60
ηD
(%)
(1)
18
(2)
40
(3)
(1)
17.6
(2)
(3)
20
17.2
16.8
0
0
30
60
90
0
30
60
PL (W)
VDS = 28 V; IDq = 950 mA.
VDS = 28 V; IDq = 950 mA.
(1) f = 2112.5 MHz.
(1) f = 2112.5 MHz.
(2) f = 2140 MHz.
(2) f = 2140 MHz.
(3) f = 2167.5 MHz.
(3) f = 2167.5 MHz.
Fig 5.
Power gain as function of load power; typical
values
Fig 6.
001aal347
8
PAR
(dB)
90
PL (W)
Drain efficiency as function of load power;
typical values
001aal348
0
ACPR5M
(dBc)
(1)
(2)
6
(3)
−20
(1)
4
(2)
(3)
−40
2
0
0
30
60
90
−60
0
30
PL (W)
VDS = 28 V; IDq = 950 mA.
VDS = 28 V; IDq = 950 mA.
(1) f = 2112.5 MHz.
(2) f = 2140 MHz.
(2) f = 2140 MHz.
(3) f = 2167.5 MHz.
(3) f = 2167.5 MHz.
Peak-to-average power ratio as function of
load power; typical values
BLF7G22LS-130_1
Product data sheet
90
PL (W)
(1) f = 2112.5 MHz.
Fig 7.
60
Fig 8.
Adjacent power channel ratio (5 MHz) as
function of load power; typical values
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Rev. 01 — 2 February 2010
© NXP B.V. 2010. All rights reserved.
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BLF7G22LS-130
NXP Semiconductors
Power LDMOS transistor
7.4 2-carrier W-CDMA
001aal349
20
50
ηD
(%)
Gp
(dB)
ACPR
(dBc)
40
−20
18
30
−30
17
20
−40
10
−50
0
−60
19
Gp
16
001aal350
−10
ηD
15
0
10
20
30
40
50
60
70
PL(AV) (W)
VDS = 28 V; IDq = 950 mA; f1 = 2137.5 MHz; f2 = 2142.5
MHz; carrier spacing 5 MHz.
Fig 9.
Power gain and drain efficiency as functions
of average load power; typical values
001aal351
18.6
Gp
(dB)
0
10
20
30
40
50
VDS = 28 V; IDq = 950 mA; f1 = 2137.5 MHz; f2 = 2142.5
MHz; carrier spacing 5 MHz.
Fig 10. Adjacent power channel ratio as function of
average load power; typical values
001aal352
30
(3)
IRL
(dB)
(3)
60
70
PL(AV) (W)
(2)
(1)
18.2
20
(2)
(1)
17.8
10
0
17.4
0
10
20
30
40
50
60
PL (W)
70
VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz.
0
10
20
(1) f = 2115 MHz.
(2) f = 2140 MHz.
(2) f = 2140 MHz.
(3) f = 2165 MHz.
(3) f = 2165 MHz.
BLF7G22LS-130_1
Product data sheet
40
50
60
PL (W)
70
VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz.
(1) f = 2115 MHz.
Fig 11. Power gain as function of load power;
typical values
30
Fig 12. Input return loss as function of load power;
typical values
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Rev. 01 — 2 February 2010
© NXP B.V. 2010. All rights reserved.
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BLF7G22LS-130
NXP Semiconductors
Power LDMOS transistor
001aal353
50
ηD
(%)
001aal354
0
APCR5M
(dBc)
40
(1)
−20
(2)
30
(1)
(2)
(3)
(3)
20
−40
10
0
0
10
20
30
40
50
60
PL (W)
70
−60
VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz.
0
10
20
(1) f = 2115 MHz.
(2) f = 2140 MHz.
(2) f = 2140 MHz.
(3) f = 2165 MHz.
(3) f = 2165 MHz.
001aal355
18.6
40
50
60
PL (W)
70
VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz.
(1) f = 2115 MHz.
Fig 13. Drain efficiency as function of load power;
typical values
30
Fig 14. Adjacent power channel ratio (5 MHz) as
function of load power; typical values
001aal356
50
ηD
(%)
Gp
(dB)
(3)
40
(2)
(1)
(1)
18.2
(2)
30
(3)
20
17.8
10
0
17.4
0
10
20
30
40
50
60
PL (W)
70
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz.
0
10
20
(1) f = 2117.5 MHz.
(2) f = 2140 MHz.
(2) f = 2140 MHz.
(3) f = 2162.5 MHz.
(3) f = 2162.5 MHz.
BLF7G22LS-130_1
Product data sheet
40
50
60
PL (W)
70
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz.
(1) f = 2117.5 MHz.
Fig 15. Power gain as function of load power; typical
values
30
Fig 16. Drain efficiency as function of load power;
typical values
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Rev. 01 — 2 February 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
BLF7G22LS-130
NXP Semiconductors
Power LDMOS transistor
001aal357
0
APCR5M
(dBc)
APCR5M
(dBc)
−20
−20
(1)
(2)
(1)
(3)
−40
−60
001aal358
0
(2)
(3)
−40
0
10
20
30
40
50
60
PL (W)
70
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz.
−60
0
10
20
(1) f = 2117.5 MHz.
(2) f = 2140 MHz.
(2) f = 2140 MHz.
(3) f = 2162.5 MHz.
(3) f = 2162.5 MHz.
BLF7G22LS-130_1
Product data sheet
40
50
60
PL (W)
70
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz.
(1) f = 2117.5 MHz.
Fig 17. Adjacent power channel ratio (5 MHz) as
function of load power; typical values
30
Fig 18. Adjacent power channel ratio (10 MHz) as
function of load power; typical values
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Power LDMOS transistor
7.5 Test circuit
C3
C6
R1
C8 C9
C11
C2
C1
C5
BLF7G22LS-130 OUTPUT V1
RO4350 30MIL RSN
BLF7G22LS-130 INPUT V1
RO4350 30MIL RSN
C4
C7 C10
001aal359
See Table 8 for list of components. The drawing is not to scale.
Fig 19. Component layout
Table 8.
List of components
See Figure 19 for component layout.
BLF7G22LS-130_1
Product data sheet
Component
Description
Value
Remarks
C1, C2, C3,
C4, C5
multilayer ceramic chip capacitor
9.1 pF
ATC100B
C6, C7
multilayer ceramic chip capacitor
220 nF
AVX1206
C8, C9, C10
multilayer ceramic chip capacitor
4.7 μF; 50 V
Kemet
C11
electrolytic capacitor
220 μF; 63 V
BC
R1
SMD resistor
6.2 Ω
Philips 1206
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Rev. 01 — 2 February 2010
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Power LDMOS transistor
8. Package outline
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 20. Package outline SOT502B
BLF7G22LS-130_1
Product data sheet
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Rev. 01 — 2 February 2010
© NXP B.V. 2010. All rights reserved.
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Power LDMOS transistor
9. Abbreviations
Table 9.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
PAR
Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF7G22LS-130_1
20100202
Product data sheet
-
-
BLF7G22LS-130_1
Product data sheet
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Rev. 01 — 2 February 2010
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Power LDMOS transistor
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
11.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that the product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
BLF7G22LS-130_1
Product data sheet
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Rev. 01 — 2 February 2010
© NXP B.V. 2010. All rights reserved.
12 of 14
BLF7G22LS-130
NXP Semiconductors
Power LDMOS transistor
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF7G22LS-130_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 February 2010
© NXP B.V. 2010. All rights reserved.
13 of 14
BLF7G22LS-130
NXP Semiconductors
Power LDMOS transistor
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 4
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 February 2010
Document identifier: BLF7G22LS-130_1
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