Central CZT31C 2.0w complementary silicon Datasheet

NE
W
Central
CZT31C NPN
CZT32C PNP
Semiconductor Corp.
2.0W COMPLEMENTARY SILICON
POWER TRANSISTOR
POWER
TM
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT31C
and CZT32C types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 3.0 amps.
TM
223
SOT-223 CASE
MAXIMUM RATINGS: (TA=25oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
100
100
5.0
3.0
6.0
1.0
2.0
TJ,Tstg
ΘJA
-65 to +150
62.5
UNITS
V
V
V
A
A
A
W
oC
oC/W
ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted)
SYMBOL
ICES
ICEO
IEBO
BVCEO
* VCE(SAT)
* VBE(ON)
* hFE
* hFE
fT
TEST CONDITIONS
VCE=100V
VCE=60V
VEB=5.0V
IC=30mA
IC=3.0A, IB=375mA
VCE=4.0V, IC=3.0A
VCE=4.0V, IC=1.0A
VCE=4.0V, IC=3.0A
VCE=10V, IC=500mA, f=1.0MHz
* Pulsed, 2%D.C.
294
MIN
MAX
200
300
1.0
100
1.2
1.8
25
10
3.0
UNITS
µA
µA
mA
V
V
V
100
MHz
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
R2
R1
295
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