SavantIC Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage CONDITIONS VALUE BDW83 45 BDW83A 60 BDW83B Open emitter 80 BDW83C 100 BDW83D 120 BDW83 45 BDW83A 60 BDW83B Open base 80 BDW83C 100 BDW83D 120 Open collector UNIT V V 5 V IC Collector current 15 A IB Base current 0.5 A PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 150 Ta=25 3.5 W SavantIC Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS MIN BDW83 45 BDW83A 60 BDW83B IC=30mA, IB=0 TYP. MAX V 80 BDW83C 100 BDW83D 120 UNIT VCEsat-1 Collector-emitter saturation voltage IC=6A ,IB=12mA 2.5 V VCEsat-2 Collector-emitter saturation voltage IC=15A ,IB=150mA 4.0 V Base-emitter on voltage IC=6A ; VCE=3V 2.5 V VCB=45V, IE=0 TC=150 VCB=60V, IE=0 TC=150 VCB=80V, IE=0 TC=150 VCB=100V, IE=0 TC=150 VCB=120V, IE=0 TC=150 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 mA 1 mA 2 mA VBE BDW83 BDW83A ICBO Collector cut-off current BDW83B BDW83C BDW83D ICEO Collector cut-off current BDW83 VCE=30V, IB=0 BDW83A VCE=30V, IB=0 BDW83B VCE=40V, IB=0 BDW83C VCE=50V, IB=0 BDW83D VCE=60V, IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=6A ; VCE=3V 750 hFE-2 DC current gain IC=15A ; VCE=3V 100 VEC Diode forward voltage IE=15A ton Turn-on time toff Turn-off time IC = 10 A, IB1 =-IB2=40 mA RL=3B; VBE(off) = -4.2V Duty CycleC2% 20000 3.5 V 0.9 µs 7.0 µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 0.83 /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDW83/83A/83B/83C/83D PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3