FJN598J FJN598J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92 1 1. Source 2. Gate 3. Drain Si N-channel Junction FET Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO Gate-Drain Voltage Parameter Ratings -20 Units V IG ID Gate Current 10 mA Drain Current 1 PD Power Dissipation mA 150 mW TJ TSTG Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVGDO Parameter Gate-Drain Breakdown Voltage Test Condition IG= -100uA Min. -20 Typ. Max. Units V -0.6 -1.5 V 350 µA VGS(off) Gate-Source Cut-off Voltage VDS=5V, ID=1µA IDSS Drain Current VDS=5V, VGS=0 100 lYFSl Forward Transfer Admittance VDS=5V, VGS=0, f=1MHz 0.4 CISS Input Capacitance VDS=5V, VGS=0, f=1MHz 3.5 pF CRSS Output Capacitance VDS=5V, VGS=0, f=1MHz 0.65 pF 1.2 ms IDSS Classification Classification A B C IDSS(µA) 100 ~ 170 150 ~ 240 210 ~ 350 ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 FJN598J Typical Characteristics 500 1000 IDSS = 200µA 450 ID[µA], DRAIN CURRENT ID[µA], DRAIN CURRENT IDSS = 500µA 900 400 350 300 250 VGS = 0 200 150 VGS = -0.1V 100 700 600 VGS = 0 500 400 VGS = -0.1V 300 VGS = -0.2V 200 VGS = -0.2V 50 800 100 VGS = -0.4V VGS = -0.3V VGS = -0.3V VGS = -0.4V VGS = -0.5V 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 Figure 1. ID-VDS lFSl [ms], FORWARD TRANSFER ADMITTANCE VDS = 5V ID[mA], DRAIN CURRENT 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -1.4 -1.2 -1.0 -0.8 6 7 8 9 10 -0.6 -0.4 -0.2 0.0 10 VDS = 5V VGS = 0 f=1kHz 1 0.1 0.1 1 VGS[V], GATE-SOURCE VOLTAGE IDSS[mA], DRAIN CURRENT Figure 4. yFS-IDSS Figure 3. ID-VGS -10 100 VDS = 5V ID = 1µA -1 CISS[pF], INPUT CAPACITANCE VGS(off)[V], GATE-SOURCE CUT-OFF VOLTAGE 5 Figure 2. ID-VDS 1.6 0.0 -1.6 4 VDS[V], DRAIN-SOURCE VOLTAGE VDS[V], DRAIN-SOURCE VOLTAGE - 0.1 VGS = -0.6V 0 0 10 1 0.1 1 IDSS[mA], DRAIN CURRENT Figure 5. VGS(off)-IDSS ©2002 Fairchild Semiconductor Corporation 1 10 VDS[V], DRAIN-SOURCE VOLTAGE Figure 6. CISS-VDS Rev. B1, November 2002 FJN598J Typical Characteristics (Continued) 200 VGS = 0 f = 1MHz 175 PD[mW], POWER DISSIPATION Crss[pF], OUTPUT CAPACITANCE 10 1 150 125 100 75 50 25 0 0.1 1 0 10 50 75 100 125 150 Ta[ C], AMBIENT TEMPERATURE Figure 7. CRSS-VDS Figure 8. PD-TA 700 VNO:VCC =4.5V VI = 0, A CURVE RL = 1KΩ IDSS:VDS=5V -112 -114 -116 -118 -120 10 100 IDSS[µA], DRAIN CURRENT Figure 9. VNO-IDSS ©2002 Fairchild Semiconductor Corporation 1000 ZO[Ω ], OUTPUT RESISTANCE -110 VNO [dB], OUTPUT NOISE VOLTAGE 25 o VDS[V], DRAIN-SOURCE VOLTAGE ZO:VCC =4.5V VIN = 10mV f = 1kHz IDSS:VDS=5V 600 500 400 300 200 10 100 1000 IDSS[µA], DRAIN CURRENT Figure 10. ZO-IDSS Rev. B1, November 2002 FJN598J Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1