ADPOW APTC60AM18SC Phase leg series & sic parallel diodes super junction mosfet power module Datasheet

APTC60AM18SC
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
VDSS = 600V
RDSon = 18mW max @ Tj = 25°C
ID = 143A @ Tc = 25°C
Application
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
·
-
G1
VBUS
0/VBUS
OUT
·
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
·
·
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
·
S1
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Benefits
·
·
·
·
S2
G2
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
143
107
572
±30
18
833
20
1
1800
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–7
APTC60AM18SC – Rev 1 May, 2004
Symbol
VDSS
APTC60AM18SC
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
Test Conditions
VGS = 0V, ID = 1000µA
VGS = 0V,VDS = 600V Tj = 25°C
VGS = 0V,VDS = 600V Tj = 125°C
VGS = 10V, ID = 71.5A
VGS = VDS, ID = 4mA
VGS = ±20 V, VDS = 0V
Min
600
2.1
3
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
28
10.2
0.85
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 143A
Td(on)
Turn-on Delay Time
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Typ
Max
Unit
V
100
1000
18
3.9
±200
mW
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Tr
Td(off)
Tf
1036
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy u
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy u
nC
116
444
21
Inductive switching @ 125°C
VGS = 15V
VBus = 400V
ID = 143A
RG = 1.2W
Rise Time
nF
30
ns
283
84
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 143A, RG = 1.2Ω
1608
µJ
3920
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 143A, RG = 1.2Ω
2630
µJ
4824
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
IF = 120A
VR = 133V
di/dt = 400A/µs
IF = 120A
VR = 133V
di/dt = 400A/µs
Min
Tj = 125°C
Typ
120
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
120
Tj = 125°C
500
Tc = 85°C
APT website – http://www.advancedpower.com
Max
Unit
A
1.15
V
ns
nC
2–7
APTC60AM18SC – Rev 1 May, 2004
Symbol Characteristic
Maximum Average Forward Current
IF(AV)
APTC60AM18SC
Parallel diode ratings and characteristics
Symbol Characteristic
Maximum Average Forward Current
IF(AV)
Test Conditions
50% duty cycle
Min
Tc = 125°C
Tj = 25°C
Tj = 175°C
Typ
80
1.6
2.0
VF
Diode Forward Voltage
IF = 80A
QC
Total Capacitive Charge
IF = 80A, VR = 300V
di/dt =2000A/µs
112
Q
Total Capacitance
f = 1MHz, VR = 200V
520
f = 1MHz, VR = 400V
400
Max
1.8
2.4
Unit
A
V
nC
pF
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
Parallel diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.15
0.46
0.35
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
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3–7
APTC60AM18SC – Rev 1 May, 2004
Package outline
APTC60AM18SC
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.16
0.14
0.9
0.12
0.7
0.1
0.5
0.08
0.06
0.3
0.04
0.1
0.02
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
540
VGS=15&10V
600
6.5V
6V
500
400
5.5V
300
5V
200
4.5V
4V
100
0
0
360
270
180
TJ=125°C
90
TJ=25°C
TJ=-55°C
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
1.05
VGS=10V
VGS=20V
1
7
DC Drain Current vs Case Temperature
160
RDS(on) vs Drain Current
1.1
Normalized to
VGS=10V @ 71.5A
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
0.95
0.9
140
120
100
80
60
40
20
0
0
40
80
120
160
ID, Drain Current (A)
200
240
25
50
75
100
125
TC, Case Temperature (°C)
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150
4–7
APTC60AM18SC – Rev 1 May, 2004
RDS(on) Drain to Source ON Resistance
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
450
0
ID, DC Drain Current (A)
ID, Drain Current (A)
700
ID, Drain Current (A)
800
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
limited by RDSon
100 µs
100
1 ms
10
10 ms
Single pulse DC line
TJ=150°C
0.6
1
-50 -25
0
25
50
75 100 125 150
1
Coss
10000
1000
Crss
100
10
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
100
1000
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
10
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
VGS=10V
ID= 143A
14
ID=143A
TJ=25°C
12
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0
200
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400 600 800
Gate Charge (nC)
1000 1200
5–7
APTC60AM18SC – Rev 1 May, 2004
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTC60AM18SC
APTC60AM18SC
Delay Times vs Current
350
td(off)
300
250
VDS=400V
RG=1.2Ω
TJ=125°C
L=100µH
200
150
100
50
0
40
80
120
160
200
80
60
40
tr
0
240
0
40
ID, Drain Current (A)
160
200
240
Switching Energy vs Gate Resistance
Eoff
Eon
VDS=400V
ID=143A
TJ=125°C
L=100µH
15
Eoff
10
Eon
5
0
40
80
120 160 200
ID, Drain Current (A)
240
0
Operating Frequency vs Drain Current
IDR, Reverse Drain Current (A)
VDS=400V
D=50%
RG=1.2Ω
TJ=125°C
100
80
60
40
20
0
30
50
70
90
110
ID, Drain Current (A)
5
7.5
10
12.5
Gate Resistance (Ohms)
140
120
2.5
130
Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
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6–7
APTC60AM18SC – Rev 1 May, 2004
0
Frequency (kHz)
120
20
Switching Energy (mJ)
Switching Energy (mJ)
VDS=400V
RG=1.2Ω
TJ=125°C
L=100µH
80
ID, Drain Current (A)
Switching Energy vs Current
10
9
8
7
6
5
4
3
2
1
0
tf
20
td(on)
0
VDS=400V
RG=1.2Ω
TJ=125°C
L=100µH
100
tr and tf (ns)
td(on) and td(off) (ns)
Rise and Fall times vs Current
120
APTC60AM18SC
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.35
0.9
0.3
0.7
0.25
0.2
0.5
0.15
0.3
0.1
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
1600
TJ=25°C
120
TJ=75°C
IR Reverse Current (µA)
IF Forward Current (A)
Reverse Characteristics
Forward Characteristics
160
TJ=175°C
80
TJ=125°C
40
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
1400
TJ=175°C
1200
TJ=125°C
1000
800
TJ=75°C
600
400
TJ=25°C
200
0
200
300 400 500 600 700
VR Reverse Voltage (V)
800
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
3000
2500
2000
1500
1000
500
0
10
100
VR Reverse Voltage
1000
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTC60AM18SC – Rev 1 May, 2004
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