Microsemi APTGF15H120T1G Full - bridge npt igbt power module Datasheet

APTGF15H120T1G
Full - Bridge
NPT IGBT Power Module
3
4
Q3
Q1
CR1 CR3
2
5
6
1
Q4
Q2
CR2 CR4
7
9
8
11
10
NTC
12
VCES = 1200V
IC = 15A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Pins 3/4 must be shorted together
Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
1200
25
15
60
±20
140
Tj = 125°C
30A@1150V
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
August, 2007
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTGF15H120T1G – Rev 0
Symbol
VCES
APTGF15H120T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
Tj = 25°C
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 15A
Tj = 125°C
VGE = VCE, IC = 1mA
VGE = 20V, VCE = 0V
Typ
VGE = 0V
VCE = 1200V
2.5
3.2
4.0
4
Max
250
500
3.7
Unit
µA
V
6
400
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 600V
IC =15A
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω
VGE = 15V
Tj = 125°C
VBus = 600V
IC = 15A
Tj = 125°C
RG = 33Ω
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
1000
150
70
99
10
70
60
50
315
pF
nC
ns
30
60
50
356
ns
40
2
mJ
1
Reverse diode ratings and characteristics
IRM
IF
VF
Test Conditions
Min
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
Tc = 80°C
IF = 15A
VR = 800V
di/dt =200A/µs
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Unit
V
Tj = 25°C
Tj = 125°C
IF = 15A
IF = 30A
IF = 15A
trr
Typ
1200
Maximum Peak Repetitive Reverse Voltage
100
500
15
2.8
3.4
Tj = 125°C
2.4
Tj = 25°C
240
Tj = 125°C
Tj = 25°C
290
260
Tj = 125°C
960
µA
A
3.3
August, 2007
VRRM
V
ns
nC
2–6
APTGF15H120T1G – Rev 0
Symbol Characteristic
APTGF15H120T1G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
IGBT
Diode
To heatsink
M4
2500
-40
-40
-40
2.5
Max
0.9
2
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
Min
Typ
50
3952
Max
Unit
kΩ
K
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
− 
 T25 T 

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTGF15H120T1G – Rev 0
August, 2007
SP1 Package outline (dimensions in mm)
APTGF15H120T1G
Typical Performance Curve
Output characteristics (VGE=15V)
40
TJ=25°C
30
TJ=125°C
20
10
10
TJ=25°C
8
6
4
TJ=125°C
2
1
2
3
4
5
6
7
VCE, Collector to Emitter Voltage (V)
0
8
VGE, Gate to Emitter Voltage (V)
Transfer Characteristics
50
250µs Pulse Test
< 0.5% Duty cycle
40
30
20
TJ=125°C
10
TJ=25°C
0
2.5
5
7.5
10
12.5
VGE, Gate to Emitter Voltage (V)
TJ = 125°C
250µs Pulse Test
< 0.5% Duty cycle
8
7
Ic=30A
6
5
Ic=15A
4
3
2
Ic=7.5A
1
0
9
10
11
12
13
14
IC = 15A
TJ = 25°C
16
2
2.5
3
3.5
VCE=240V
VCE=600V
14
12
VCE=960V
10
8
6
4
2
0
0
15
16
6
20
40
60
80
100
120
On state Voltage vs Junction Temperature
Ic=30A
5
Ic=15A
4
3
Ic=7.5A
2
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
1
0
25
VGE, Gate to Emitter Voltage (V)
25
Ic, DC Collector Current (A)
1.10
1.05
1.00
0.95
0.90
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
20
August, 2007
Breakdown Voltage vs Junction Temp.
Collector to Emitter Breakdown Voltage
(Normalized)
1.5
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
9
1
Gate Charge
18
15
VCE, Collector to Emitter Voltage (V)
0
0.5
VCE, Collector to Emitter Voltage (V)
15
10
5
0
25
50
75
100
125
TJ, Junction Temperature (°C)
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25
50
75
100
125
TC, Case Temperature (°C)
150
4–6
APTGF15H120T1G – Rev 0
0
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
0
0
VCE, Collector to Emitter Voltage (V)
Output Characteristics (VGE=10V)
12
250µs Pulse Test
< 0.5% Duty cycle
Ic, Collector Current (A)
Ic, Collector Current (A)
50
APTGF15H120T1G
Turn-Off Delay Time vs Collector Current
VCE = 600V
RG = 33Ω
70
65
VGE = 15V
60
55
50
0
5
10
15
20
25
400
td(off), Turn-Off Delay Time (ns)
30
VGE=15V,
TJ=125°C
350
300
250
200
35
0
5
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 600V
RG = 33Ω
120
45
tf, Fall Time (ns)
tr, Rise Time (ns)
20
25
30
35
Current Fall Time vs Collector Current
80
VGE=15V
40
TJ = 125°C
40
35
TJ = 25°C
30
0
0
5
10
15
20
25
30
VCE = 600V, VGE = 15V, RG = 33Ω
20
35
0
5
10
15
20
25
30
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
VCE = 600V
RG = 33Ω
7
6
TJ=125°C,
VGE=15V
5
4
TJ=25°C,
VGE=15V
3
2
1
0
0
5
10
15
20
25
30
ICE, Collector to Emitter Current (A)
TJ = 125°C
1.5
TJ = 25°C
1
0.5
0
35
0
5
10
15
20
25
30
ICE, Collector to Emitter Current (A)
35
Reverse Bias Safe Operating Area
35
Eon, 15A
5
4
Eoff, 15A
3
2
1
30
25
August, 2007
IC, Collector Current (A)
VCE = 600V
VGE = 15V
TJ= 125°C
6
VCE = 600V
VGE = 15V
RG = 33Ω
2
Switching Energy Losses vs Gate Resistance
7
35
Turn-Off Energy Loss vs Collector Current
2.5
Turn-On Energy Loss vs Collector Current
8
Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
15
50
25
Switching Energy Losses (mJ)
10
ICE, Collector to Emitter Current (A)
160
8
VGE=15V,
TJ=25°C
VCE = 600V
RG = 33Ω
20
15
10
0
5
0
0
20
40
60
80
100
120
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Gate Resistance (Ohms)
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5–6
APTGF15H120T1G – Rev 0
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
75
APTGF15H120T1G
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
10000
Cies
1000
Coes
100
Cres
10
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
VCE = 600V
D = 50%
RG = 33Ω
TJ = 125°C
TC= 75°C
100
80
ZVS
60
40
Hard
switching
20
ZCS
0
50
0
5
10
15
20
IC, Collector Current (A)
25
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
Thermal Impedance (°C/W)
Operating Frequency vs Collector Current
120
0.9
0.8
0.7
0.6
0.4
0.2
0.5
0.3
Single Pulse
0.1
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTGF15H120T1G – Rev 0
August, 2007
Rectangular Pulse Duration (Seconds)
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