DMN2041LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 28mΩ @ VGS = 4.5V 7.63A 41mΩ @ VGS = 2.5V 4.35A V(BR)DSS NEW PRODUCT Features 20V Description Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Power Management Functions DC-DC Converters Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) SO-8 D2 D1 S1 D1 G1 D1 S2 D2 G2 D2 S1 TOP VIEW Internal Schematic TOP VIEW G2 G1 N-Channel MOSFET S2 N-Channel MOSFET Ordering Information (Note 4) Part Number DMN2041LSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 N2041LD N2041LD YY WW YY WW 1 4 Chengdu A/T Site DMN2041LSD Document number: DS31964 Rev. 3 - 2 1 4 = Manufacturer’s Marking N2041LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) Shanghai A/T Site 1 of 6 www.diodes.com February 2014 © Diodes Incorporated DMN2041LSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Symbol VDSS VGSS Steady State Units V V IDM Value 20 12 7.63 4.92 30 Symbol PD RθJA Value 1.16 107.4 Unit W °C/W TJ, TSTG -55 to +150 °C TA = +25°C TA = +85°C ID Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 RDS (ON) — |Yfs| VSD — — 1.2 28 41 — 1.2 V Static Drain-Source On-Resistance — 19 25 6 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6A VGS = 2.5V, ID = 5.2A VDS = 10V, ID = 6A VGS = 0V, IS = 1.7A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 550 88 81 1.34 15.6 7.2 1 1.9 4.69 13.19 22.1 6.43 — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V Test Condition pF VDS =10V, VGS = 0V, f = 1MHz Ω nC VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 10V, ID = 6A nC VGS = 4.5 V, VDS = 10V, ID = 6A ns VDD = 10V, VGEN = 4.5V, Rg = 1Ω, ID = 6.7A 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by function temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN2041LSD Document number: DS31964 Rev. 3 - 2 2 of 6 www.diodes.com February 2014 © Diodes Incorporated DMN2041LSD 20 20 VGS = 10V VGS = 2.0V VGS = 2.5V 12 VDS = 5V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 3.0V 8 4 12 8 T A = 150°C 4 VGS = 1.5V TA = 125°C T A = 85°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.05 VGS = 1.8V 0.04 0.03 VGS = 2.5V 0.02 VGS = 4.5V 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 1.4 1.2 1.0 VGS = 4.5V ID = 10A 0.8 VGS = 2.5V ID = 5A 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2041LSD Document number: DS31964 Rev. 3 - 2 T A = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 0.06 VGS = 10V 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 16 3 of 6 www.diodes.com 0.06 VGS = 4.5V 0.04 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0 0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 20 0.08 0.06 0.04 VGS = 2.5V ID = 5A 0.02 VGS = 4.5V ID = 10A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature February 2014 © Diodes Incorporated DMN2041LSD 1.4 16 1.2 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 1.0 0.8 ID = 1mA 0.6 ID = 250µA 0.4 TA = 25°C 12 8 4 0.2 0 -50 0 1,000 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature f = 1MHz Ciss C, CAPACITANCE (pF) Coss 100 Crss 10 0 5 10 15 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10,000 20 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C TA = -55°C 1 2 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.6 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 111°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 /t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response DMN2041LSD Document number: DS31964 Rev. 3 - 2 4 of 6 www.diodes.com February 2014 © Diodes Incorporated DMN2041LSD Package Outline Dimensions 0.254 NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN2041LSD Document number: DS31964 Rev. 3 - 2 5 of 6 www.diodes.com February 2014 © Diodes Incorporated DMN2041LSD IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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