Sony CXK5T8257BM-12LLX 32768-word x 8-bit high speed cmos static ram Datasheet

CXK5T8257BTM/BYM/BM -10LLX/12LLX
32768-word × 8-bit High Speed CMOS Static RAM Preliminary
For the availability of this product, please contact the sales office.
Description
The CXK5T8257BTM/BYM/BM is 262,144 bits high
speed CMOS static RAM organized as 32768-words
by 8 bits.
Special feature are low power consumption and
high speed.
The CXK5T8257BTM/BYM/BM is a suitable RAM
for portable equipment with battery back up.
Features
• Extended operating temperature range: –25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time:
(Access time)
3.0V operation -10LLX
100ns (Max.)
-12LLX
120ns (Max.)
3.3V operation -10LLX
85ns (Max.)
-12LLX
100ns (Max.)
• Low standby current: 7.0µA (Max.)
• Low power data retention: 2.0V (Min.)
• Available in many packages
CXK5T8257BTM/BYM
8mm × 13.4mm 28 pin TSOP Package
CXK5T8257BM
450mil 28 pin SOP Package
Function
32768-word × 8 bit static RAM
Structure
Silicon gate CMOS IC
CXK5T8257BTM
28 pin TSOP (Plastic)
CXK5T8257BYM
28 pin TSOP (Plastic)
CXK5T8257BM
28 pin SOP (Plastic)
Block Diagram
A14
A13
A12
A11
A9
A8
A7
A6
A5
Buffer
A10
A4
A3
A2
A1
A0
Buffer
Row
Decoder
Memory
Matrix
512 × 512
VCC
GND
I/O Gate
Column
Decoder
OE
Buffer
WE
I/O Buffer
CE
I/O1
I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
PE96509-ST
CXK5T8257BTM/BYM/BM
Pin Configuration (Top View)
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A3
A4
A5
A6
A7
A12
A14
VCC
WE
A13
A8
A9
A11
OE
22
23
24
25
26
27
28
1
2
3
4
5
6
7
Pin Description
21
20
19
18
17
16
15
14
13
12
11
10
9
8
CXK5T8257BTM
(Standard Pinout)
7
6
5
4
3
2
1
28
27
26
25
24
23
22
8
9
10
11
12
13
14
15
16
17
18
19
20
21
CXK5T8257BYM
(Standard Pinout)
Absolute Maximum Ratings
Item
A10
CE
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A2
A1
A0
I/O1
I/O2
I/O3
GND
I/O4
I/O5
I/O6
I/O7
I/O8
CE
A10
Symbol
A14 1
28 VCC
A12 2
27 WE
A7 3
26 A13
A6 4
25 A8
A5 5
24 A9
A4 6
23 A11
A3 7
22 OE
A2 8
21 A10
A1 9
20 CE
A0 10
19 I/O8
I/O1 11
18 I/O7
I/O2 12
17 I/O6
I/O3 13
16 I/O5
GND 14
15 I/O4
CXK5T8257BM
(Ta = 25°C, GND = 0V)
Symbol
Rating
Unit
V
Supply voltage
VCC
Input voltage
VIN
–0.5 to +4.6
–0.5∗1 to VCC + 0.5
Input and output voltage
VI/O
–0.5∗1 to VCC + 0.5
V
Allowable power dissipation
PD
0.7
W
Operating temperature
Topr
–25 to +85
°C
Storage temperature
Tstg
–55 to +150
°C
Soldering temperature · time
Tsolder
235 · 10
°C · s
V
∗1 VIN, VI/O = –3.0V Min. for pulse width less than 50ns.
Truth Table
CE
OE
WE
Mode
I/O1 to I/O8
H
×
×
Not selected
High Z
ISB1, ISB2
L
H
H
Output disable
High Z
ICC1, ICC2
L
L
H
Read
Data out
ICC1, ICC2
L
×
L
Write
Data in
ICC1, ICC2
×: "H" or "L"
–2–
VCC Current
Description
A0 to A14
Address input
I/O1 to I/O8
Data input/output
CE
Chip enable input
WE
Write enable input
OE
Output enable input
VCC
Power supply
GND
Ground
CXK5T8257BTM/BYM/BM
DC Recommended Operating Conditions
Item
(Ta = –25 to +85°C, GND = 0V)
VCC = 2.7 to 3.6V
Symbol
VCC = 3.3V ± 0.3V
Min.
Typ.
Max.
Min.
Typ.
Max.
Supply voltage
VCC
2.7
3.3
3.6
3.0
3.3
3.6
Input high voltage
VIH
—
VCC + 0.3
VCC + 0.3
VIL
—
0.4
2.2
–0.3∗1
—
Input low voltage
2.4
–0.3∗1
—
0.6
Unit
V
∗1 VIL=–3.0V Min. for pulse width less than 50ns.
Electrical Characteristics
• DC characteristics
Item
(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)
Symbol
Test Conditions
Min.
Typ.∗2
Max.
Input leakage current ILI
VIN = GND to VCC
–0.5
—
0.5
Output leakage
current
ILO
CE = VIH
OE = VIH or WE = VIL
VI/O = GND to VCC
–0.5
—
0.5
Operating power
supply current
ICC1
CE = VIL
VIN = VIH or VIL
IOUT = 0mA
—
0.9
2
Average operating
ICC2
current
Standby current
ISB1
Unit
µA
mA
Min. cycle
duty = 100%, IOUT = 0mA
CE ≥ VCC – 0.2V
18∗3
35∗4
18
35
—
7.0
3.5
—
µA
—
—
0.12
mA
10LLX
—
12LLX
–25 to +85°C
–25 to +70°C
—
—
—
+25°C
ISB2
CE = VIH
—
0.06
0.7
Output high
voltage
VOH
IOH = –2mA
2.4
—
—
Output low
voltage
VOL
IOL = 2.0mA
—
—
0.4
V
∗2 VCC = 3.3V, Ta = 25°C
∗3 ICC2 = 21mA for 3.3V operation (VCC = 3.3V ± 0.3V)
∗4 ICC3 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)
–3–
CXK5T8257BTM/BYM/BM
I/O capacitance
Item
(Ta = 25°C, f = 1MHz)
Symbol Test condition
Min.
Typ.
Max.
Unit
Input capacitance
CIN
VIN = 0V
—
—
8
pF
I/O capacitance
CI/O
VI/O = 0V
—
—
10
pF
Note) This parameter is sampled and is not 100% tested.
AC Characteristics
• AC test conditions
(Ta = –25 to +85°C)
Conditions
Item
VCC = 2.7 to 3.6V
VCC = 3.3V ± 0.3V
Input pulse high level
VIH = 2.4V
VIH = 2.2V
Input pulse low level
VIL = 0.4V
VIL = 0.6V
Input rise time
tr = 5ns
tf = 5ns
tr = 5ns
tf = 5ns
Input fall time
Input and output reference level
-10LLX
Output load conditions
-12LLX
1.4V
1.4V
CL∗1 = 100pF, 1TTL CL∗1 = 30pF, 1TTL
CL∗1 = 100pF, 1TTL CL∗1 = 100pF, 1TTL
∗1 CL includes scope and jig capacitances.
–4–
TTL
CL
CXK5T8257BTM/BYM/BM
• Read cycle (WE = “H”)
VCC = 2.7 to 3.6V
Item
Symbol
tRC
tAA
Address access time
tCO
Chip enable access time (CE)
tOE
Chip enable to output valid
tOH
Chip hold from address change
tLZ
Chip enable to output in low Z (CE)
tOLZ
Output enable to output in low Z (OE)
tHZ∗1
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE) tOHZ∗1
Read cycle time
∗1
-10LLX
VCC = 3.3V ± 0.3V
-12LLX
-10LLX
-12LLX
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
100
—
120
—
85
—
100
—
—
100
—
120
—
85
—
100
—
100
—
120
—
85
—
100
—
50
—
60
—
50
—
50
20
—
20
—
20
—
20
—
10
—
10
—
10
—
10
—
10
—
10
—
10
—
10
—
—
35
—
40
—
35
—
35
—
35
—
35
—
35
—
35
Unit
ns
tHZ and tOHZ are defined as the time required for outputs to turn to high impedance state and are not referred
to as output voltage levels.
• Write cycle
VCC = 2.7 to 3.6V
Item
Write cycle time
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE)
Output active from end of write
Write to output in high Z
∗2
Symbol
tWC
tAW
tCW
tDW
tDH
tWP
tAS
tWR
tWR1
tOW
tWHZ∗2
-10LLX
VCC = 3.3V ± 0.3V
-12LLX
-10LLX
-12LLX
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
100
—
120
—
85
—
100
—
80
—
100
—
80
—
80
—
80
—
100
—
80
—
80
—
35
—
50
—
35
—
35
—
0
—
0
—
0
—
0
—
60
—
70
—
60
—
60
—
0
—
0
—
0
—
0
—
0
—
0
—
0
—
0
—
0
—
0
—
0
—
0
—
10
—
10
—
10
—
10
—
—
35
—
40
—
35
—
35
Unit
ns
tWHZ is defined as the time requied for outputs to turn to high impedance state and is not referred to as
output voltage level.
–5–
CXK5T8257BTM/BYM/BM
Timing waveform
• Read cycle (1) : CE = OE =VIL, WE = VIH
tRC
Address
tAA
tOH
Data out
Previous data valid
Data valid
• Read cycle (2): WE = VIH
tRC
Address
tAA
CE
tCO
tHZ
tLZ
OE
tOE
tOHZ
tOLZ
Data out
Data valid
High impedance
• Write cycle (1) : WE contorl
tWC
Address
tWR
tAW
OE
tCW
CE
tAS
[∗1]
tWP
WE
tDW
Data in
tDH
Data valid
tWHZ
tOW
Data out
High impedance
[∗2]
[∗2]
–6–
CXK5T8257BTM/BYM/BM
• Write cycle (2): CE control
tWC
Address
tAW
OE
tAS
tCW
tWR1
CE
tWP
WE
tDW
Data in
tDH
Data valid
Data out
High impedance
∗1 Write is executed when both CE and WE are at low simultaneously.
∗2 Do not apply the data input voltage of the opposite phase to the output while I/O pin is output condition.
–7–
CXK5T8257BTM/BYM/BM
Data Retention Waveform
• Low supply voltage data retention waveform
Data retention mode
tCDRS
tR
VCC
2.7V
2.2V
VDR
CE
CE ≥ VCC – 0.2V
GND
Data Retention Characteristics
Item
Data retention voltage
Symbol
(Ta = –25 to +85°C)
Test conditions
Min.
Typ.
Max.
Unit
2
—
3.6
V
–25 to +85°C
—
—
6
–25 to +70°C
—
—
3
+25°C
—
0.1
—
VDR
CE ≥ VCC – 0.2V
ICCDR1
VCC = 3.0V
CE ≥ 2.8V
Data retention current
µA
ICCDR2
VCC = 2.0 to 3.6V
CE ≥ VCC – 0.2V
—
0.12∗1
7.0
Data retention
setup time
tCDRS
Chip disable to data
retention mode
0
—
—
ns
Recovery time
tR
5
—
—
ms
∗1 VCC = 3.3V, Ta = 25°C
–8–
CXK5T8257BTM/BYM/BM
Package Outline
Unit: mm
CXK5T8257BTM
28PIN TSOP (Plastic)
∗8.0 ± 0.1
1.2 MAX
0.1
13.4 ± 0.3
8
∗11.8 ± 0.1
21
A
22
+ 0.1
0.2 – 0.05
28 1
+ 0.07
0.127 – 0.02
7
0.55 ± 0.1
0.5 ± 0.1
+ 0.1
0.05 – 0.05
0° to 10°
DETAIL A
NOTE: Dimension “∗” does not include mold protrusion.
PACKAGE STRUCTURE
PACKAGE MATERIAL
EPOXY RESIN
SONY CODE
TSOP-28P-L01
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
TSOP028-P-0000-A
LEAD MATERIAL
COPPER / 42 ALLOY
PACKAGE WEIGHT
0.2g
JEDEC CODE
CXK5T8257BYM
28PIN TSOP (Plastic)
∗8.0 ± 0.1
0.1
13.4 ± 0.3
21
∗11.8 ± 0.1
8
1.2 MAX
A
7
+ 0.1
0.2 – 0.05
1 28
+ 0.07
0.127 – 0.02
22
0.55 ± 0.1
0.5 ± 0.1
+ 0.1
0.05 – 0.05
0° to 10°
DETAIL A
NOTE: Dimension “∗” does not include mold protrusion.
PACKAGE STRUCTURE
PACKAGE MATERIAL
EPOXY RESIN
SONY CODE
TSOP-28P-L01R
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
TSOP028-P-0000-B
LEAD MATERIAL
COPPER / 42 ALLOY
PACKAGE WEIGHT
0.2g
JEDEC CODE
–9–
CXK5T8257BTM/BYM/BM
CXK5T8257BM
28PIN SOP (PLASTIC)
+ 0.4
2.3 – 0.15
+ 0.4
18.0 – 0.1
28
15
0.15
14
1
0.4 ± 0.1
1.27
0.24
1.0 ± 0.2
11.8 ± 0.4
+ 0.3
8.4 – 0.1
+ 0.2
0.1 – 0.05
0° to 10°
+ 0.1
0.05
0.15 –
M
PACKAGE STRUCTURE
PACKAGE MATERIAL
EPOXY RESIN
SONY CODE
SOP-28P-L05
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
∗SOP028-P-0450
LEAD MATERIAL
42 ALLOY
PACKAGE WEIGHT
0.7g
JEDEC CODE
– 10 –
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