Vishay BZD27C11P Zener diodes with surge current specification Datasheet

BZD27C3V6P to BZD27C200P
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
• Sillicon planar Zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C/10 s at terminals
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
3.6 to 200
V
Test current IZT
5 to 100
mA
VZ specification
Pulse current
Int. construction
Single
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZD27C3V6P to BZD27C200P
BZD27C3V6P to
BZD27C200P-series-GS08
3000 per 7" reel (8 mm tape)
15 000/box
BZD27C3V6P to BZD27C200P
BZD27C3V6P to
BZD27C200P-series-GS18
10 000 per 13" reel (8 mm tape)
10 000/box
PACKAGE
PACKAGE NAME
WEIGHT
DO-219AB (SMF)
15 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
SOLDERING
CONDITIONS
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Non repetitive peak surge power
dissipation (2)
TEST CONDITION
SYMBOL
VALUE
UNIT
TL = 80 °C
Ptot
2300
mW
TA = 25 °C (1)
Ptot
800
mW
100 μs square pulse
PZSM
300
W
10/1000 μs waveform
(BZD27-C7V5P to BZD27-C100P)
PRSM
150
W
10/1000 μs waveform
(BZD27-C100P to BZD27-C200P)
PRSM
100
W
RthJL
30
K/W
RthJA
180
K/W
Tj
150
°C
Tstg
- 55 to + 150
°C
Junction to lead
Junction to ambient air
Mounted on epoxy-glass PCB with 3 mm x
3 mm Cu pads ( 40 μm thick)
Junction temperature
Storage temperature range
Notes
(1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2) T = 25 °C prior to surge
J
Rev. 2.1, 29-Nov-11
Document Number: 85810
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P to BZD27C200P
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
VZ at IZT1
IZT1
V
mA
MARKING
CODE
MIN.
NOM.
MAX.
3.6
3.8
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
IR at VR
ZZ at IZT1
VZ at IZT1
μA
MAX.
100
100

V
1
%/°C
TYP.
MAX.
MIN.
MAX.
4
8
- 0.14
- 0.04
BZD27C3V6P
D0
3.4
BZD27C3V9P
D1
3.7
3.9
4.1
100
50
1
4
8
- 0.14
- 0.04
BZD27C4V3P
D2
4
4.3
4.6
100
25
1
4
7
- 0.12
- 0.02
BZD27C4V7P
D3
4.4
4.7
5
100
10
1
3
7
- 0.1
0
BZD27C5V1P
D4
4.8
5.1
5.4
100
5
1
3
6
- 0.08
0.02
BZD27C5V6P
D5
5.2
5.6
6
100
10
2
2
4
- 0.04
0.04
BZD27C6V2P
D6
5.8
6.2
6.6
100
5
2
2
3
- 0.01
0.06
BZD27C6V8P
D7
6.4
6.8
7.2
100
10
3
1
3
0
0.07
BZD27C7V5P
D8
7
7.5
7.9
100
50
3
1
2
0
0.07
BZD27C8V2P
D9
7.7
8.2
8.7
100
10
3
1
2
0.03
0.08
BZD27C9V1P
E0
8.5
9.1
9.6
50
10
5
2
4
0.03
0.08
BZD27C10P
E1
9.4
10
10.6
50
7
7.5
2
4
0.05
0.09
BZD27C11P
E2
10.4
11
11.6
50
4
8.2
4
7
0.05
0.1
BZD27C12P
E3
11.4
12
12.7
50
3
9.1
4
7
0.05
0.1
BZD27C13P
E4
12.4
13
14.1
50
2
10
5
10
0.05
0.1
BZD27C15P
E5
13.8
15
15.6
50
1
11
5
10
0.05
0.1
BZD27C16P
E6
15.3
16
17.1
25
1
12
6
15
0.06
0.11
BZD27C18P
E7
16.8
18
19.1
25
1
13
6
15
0.06
0.11
BZD27C20P
E8
18.8
20
21.2
25
1
15
6
15
0.06
0.11
BZD27C22P
E9
20.8
22
23.3
25
1
16
6
15
0.06
0.11
BZD27C24P
F0
22.8
24
25.6
25
1
18
7
15
0.06
0.11
BZD27C27P
F1
25.1
27
28.9
25
1
20
7
15
0.06
0.11
BZD27C30P
F2
28
30
32
25
1
22
8
15
0.06
0.11
BZD27C33P
F3
31
33
35
25
1
24
8
15
0.06
0.11
BZD27C36P
F4
34
36
38
10
1
27
21
40
0.06
0.11
BZD27C39P
F5
37
39
41
10
1
30
21
40
0.06
0.11
BZD27C43P
F6
40
43
46
10
1
33
24
45
0.07
0.12
BZD27C47P
F7
44
47
50
10
1
36
24
45
0.07
0.12
BZD27C51P
F8
48
51
54
10
1
39
25
60
0.07
0.12
BZD27C56P
F9
52
56
60
10
1
43
25
60
0.07
0.12
BZD27C62P
G0
58
62
66
10
1
47
25
80
0.08
0.13
BZD27C68P
G1
64
68
72
10
1
51
25
80
0.08
0.13
BZD27C75P
G2
70
75
79
10
1
56
30
100
0.08
0.13
BZD27C82P
G3
77
82
87
10
1
62
30
100
0.08
0.13
BZD27C91P
G4
85
91
96
5
1
68
60
200
0.08
0.13
BZD27C100P
G5
94
100
106
5
1
75
60
200
0.09
0.13
BZD27C110P
G6
104
110
116
5
1
82
80
250
0.09
0.13
BZD27C120P
G7
114
120
127
5
1
91
80
250
0.09
0.13
BZD27C130P
G8
124
130
141
5
1
100
110
300
0.09
0.13
BZD27C150P
G9
138
150
156
5
1
110
130
300
0.09
0.13
BZD27C160P
H0
153
160
171
5
1
120
150
350
0.09
0.13
BZD27C180P
H1
168
180
191
5
1
130
180
400
0.09
0.13
BZD27C200P
H2
188
200
212
5
1
150
200
500
0.09
0.13
Notes
• Maximum VF = 1.2 V, at IF = 0.2 A
• Electrical characteristics when used as voltage regulator diodes
(1) Pulse test: t  5 ms
p
Rev. 2.1, 29-Nov-11
Document Number: 85810
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P to BZD27C200P
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
VZ at IZT1
IZT1
IR at VR
VC at IRSM (1)
VZ at IZT1
V
mA
MARKING
CODE
MIN.
NOM.
MAX.
μA
V
MAX.
V
A
MAX.
%/C
MIN.
MAX.
BZD27C7V5P
D8
7
7.5
7.9
100
1500
6.2
11.3
13.3
0
0.07
BZD27C8V2P
D9
7.7
8.2
8.7
100
1200
6.8
12.3
12.2
0.03
0.08
BZD27C9V1P
E0
8.5
9.1
9.6
50
100
7.5
13.3
11.3
0.03
0.08
BZD27C10P
E1
9.4
10
10.6
50
20
8.2
14.8
10.1
0.05
0.09
BZD27C11P
E2
10.4
11
11.6
50
5
9.1
15.7
9.6
0.05
0.1
BZD27C12P
E3
11.4
12
12.7
50
5
10
17
8.8
0.05
0.1
BZD27C13P
E4
12.4
13
14.1
50
5
11
18.9
7.9
0.05
0.1
BZD27C15P
E5
13.8
15
15.6
50
5
12
20.9
7.2
0.05
0.1
BZD27C16P
E6
15.3
16
17.1
25
5
13
22.9
6.6
0.06
0.11
BZD27C18P
E7
16.8
18
19.1
25
5
15
25.6
5.9
0.06
0.11
BZD27C20P
E8
18.8
20
21.2
25
5
16
28.4
5.3
0.06
0.11
BZD27C22P
E9
20.8
22
23.3
25
5
18
31
4.8
0.06
0.11
BZD27C24P
F0
22.8
24
25.6
25
5
20
33.8
4.4
0.06
0.11
BZD27C27P
F1
25.1
27
28.9
25
5
22
38.1
3.9
0.06
0.11
BZD27C30P
F2
28
30
32
25
5
24
42.2
3.6
0.06
0.11
BZD27C33P
F3
31
33
35
25
5
27
46.2
3.2
0.06
0.11
BZD27C36P
F4
34
36
38
10
5
30
50.1
3
0.06
0.11
BZD27C39P
F5
37
39
41
10
5
33
54.1
2.8
0.06
0.11
BZD27C43P
F6
40
43
46
10
5
36
60.7
2.5
0.07
0.12
BZD27C47P
F7
44
47
50
10
5
39
65.5
2.3
0.07
0.12
BZD27C51P
F8
48
51
54
10
5
43
70.8
2.1
0.07
0.12
BZD27C56P
F9
52
56
60
10
5
47
78.6
1.9
0.07
0.12
BZD27C62P
G0
58
62
66
10
5
51
86.5
1.7
0.08
0.13
BZD27C68P
G1
64
68
72
10
5
56
94.4
1.6
0.08
0.13
BZD27C75P
G2
70
75
79
10
5
62
103.5
1.5
0.08
0.13
BZD27C82P
G3
77
82
87
10
5
68
114
1.3
0.08
0.13
BZD27C91P
G4
85
91
96
5
5
75
126
1.2
0.09
0.13
BZD27C100P
G5
94
100
106
5
5
82
139
1.1
0.09
0.13
BZD27C110P
G6
104
110
116
5
5
91
139
0.72
0.09
0.13
BZD27C120P
G7
114
120
127
5
5
100
152
0.65
0.09
0.13
BZD27C130P
G8
124
130
141
5
5
110
169
0.59
0.09
0.13
BZD27C150P
G9
138
150
156
5
5
120
187
0.53
0.09
0.13
BZD27C160P
H0
153
160
171
5
5
130
205
0.48
0.09
0.13
BZD27C180P
H1
168
180
191
5
5
150
229
0.43
0.09
0.13
BZD27C200P
H2
188
200
212
5
5
160
254
0.39
0.09
0.13
Notes
• Maximum VF = 1.2 V, at IF = 0.2 A
• Electrical characteristics when used as protection diodes
(1) Non-repetitive peak reverse current in accordance with “IEC 60-1, section 8” (10/1000 μs pulse); see fig. 5
Rev. 2.1, 29-Nov-11
Document Number: 85810
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P to BZD27C200P
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PRSM - Max. Pulse Power Dissipation (W)
IF - Forward Current (A)
10
Max. VF
Typ. VF
1
0.1
0.6
0.8
17411
1.0
1.2
1.4
160
140
120
100
80
60
40
20
0
1.6
VF - Forward Voltage (V)
0
50
Fig. 1 - Forward Current vs. Forward Voltage
100
150
200
VZnom - Zener Voltage (V)
17414
Fig. 4 - Maximum Pulse Power Dissipation vs. Zener Voltage
CD - Typ. Junction Capacitance (pF)
10 000
C5V1P
C6V8P
IRSM
(%)
C18P
C12P
t1 = 10 µs
t2 = 1000 µs
100
1000
90
50
100
C27P
C51P
10
C200P
10
0
0.5
17412
1.0
1.5
2.0
2.5
17415
VR - Reverse Voltage (V)
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
t
t1
3.0
t2
Fig. 5 - Non-Repetitive Peak Reverse Current Pulse Definition
Ptot - Power Dissipation (W)
3.0
Tie point temperature
2.5
2.0
1.5
1.0
Ambient temperature
0.5
0
0
17413
25
50
75
100
125
150
Tamb - Ambient Temperature (°C)
Fig. 3 - Power Dissipation vs. Ambient Temperature
Rev. 2.1, 29-Nov-11
Document Number: 85810
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P to BZD27C200P
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): DO219-AB (SMF)
0.85 (0.033)
0 (0.000)
0.1 (0.004)
5
5
0.05 (0.002)
1.7 (0.067)
Detail Z
enlarged
1.2 (0.047)
0.8 (0.031)
0.25 (0.010)
1.9 (0.075)
0.35 (0.014)
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051)
1.4 (0.055)
1.3 (0.051)
2.9 (0.114)
17247
Rev. 2.1, 29-Nov-11
Document Number: 85810
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P to BZD27C200P
www.vishay.com
Vishay Semiconductors
Blistertape Dimensions for SMF in millimeters
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Rev. 2.1, 29-Nov-11
Document Number: 85810
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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