FCA47N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 47 A, 73 mΩ Features Description • 650 V @ TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Typ. RDS(on) = 62 mΩ • Fast Recovery Time (Typ. Trr = 240 ns) • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Solar Inverter • AC-DC Power Supply D G G D TO-3PN S S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FCA47N60F Unit 600 V 47 29.7 A A (Note 1) 141 A ± 30 V Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current (Note 1) 47 A EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS (TC = 25°C) - Derate Above 25°C 50 V/ns 417 3.33 W W/°C -55 to +150 °C 300 °C Thermal Characteristics FCA47N60F Unit RθJC Symbol Thermal Resistance, Junction-to-Case, Max. Parameter 0.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 41.7 °C/W ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 1 www.fairchildsemi.com FCA47N60F — N-Channel SuperFET® FRFET® MOSFET May 2014 Part Number Top Mark FCA47N60F FCA47N60F Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient BVDS Drain to Source Avalanche Breakdown Voltage VGS = 0 V, ID = 47 A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V, VDS = 480 V, TC = 125°C --- --- 10 100 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 23.5 A -- 0.062 0.073 Ω gFS Forward Transconductance VDS = 40 V, ID = 23.5 A -- 40 -- S VDS = 25 V, VGS = 0 V, f = 1 MHz -- 5900 8000 pF -- 3200 4200 pF -- 250 -- pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz -- 160 -- pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V -- 420 -- pF VDD = 300 V, ID = 47 A, VGS = 10 V, RG = 25 Ω -- 185 430 ns -- 210 450 ns -- 520 1100 ns -- 75 160 ns -- 210 270 nC -- 38 -- nC -- 110 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4) VDS = 480 V, ID = 47 A, VGS = 10 V (Note 4) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 47 A -- -- 1.4 V trr Reverse Recovery Time 240 -- ns Reverse Recovery Charge VGS = 0 V, IS = 47 A, dIF/dt = 100 A/μs -- Qrr -- 2.04 -- μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 18 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 47 A, di/dt ≤ 1200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 2 www.fairchildsemi.com FCA47N60F — N-Channel SuperFET® FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 2 1 10 * Notes : 1. 250μs Pulse Test o 2. TC = 25 C 0 10 -1 0 10 10 ID , Drain Current [A] 2 150°C 1 10 -55°C - Note 1. VDS = 40V 0 2. 250μs Pulse Test 10 2 1 10 25°C 10 4 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.25 IDR , Reverse Drain Current [A] RDS(ON) [Ω],Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.20 0.15 VGS = 10V 0.10 VGS = 20V 0.05 2 10 1 10 150°C 25°C * Notes : 1. VGS = 0V 2. 250μs Pulse Test * Note : TJ = 25°C 0.00 0 0 20 40 60 80 100 120 140 160 180 10 200 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 25000 VGS, Gate-Source Voltage [V] * Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss Crss 10 0 1 10 VDS = 250V VDS = 400V 6 4 2 * Note : ID = 47A 0 50 100 150 200 250 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 1.6 8 0 10 1.4 VDS = 100V 15000 0 -1 10 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 5000 1.0 Figure 6. Gate Charge Characteristics 20000 10000 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 6 VGS , Gate-Source Voltage [V] 3 www.fairchildsemi.com FCA47N60F — N-Channel SuperFET® FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250μA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 23.5 A 0.5 0.0 -100 200 -50 0 TJ, Junction Temperature [°C] 50 100 150 200 TJ, Junction Temperature [°C] Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 Operation in This Area is Limited by R DS(on) 2 40 100 μs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 1 10 DC * Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0 10 0 10 20 10 -1 10 30 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [°C] VDS, Drain-Source Voltage [V] θJC ZθJCZ(t), (t), Thermal Response [oC/W] Thermal Response Figure 11. Transient Thermal Response Curve D = 0 .5 10 -1 * N o te s : 1 . Z θ J C ( t) = 0 .3 ° C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 PDM 0 .0 5 10 -2 10 t1 0 .0 2 0 .0 1 -5 t2 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 4 www.fairchildsemi.com FCA47N60F — N-Channel SuperFET® FRFET® MOSFET Typical Performance Characteristics (Continued) FCA47N60F — N-Channel SuperFET® FRFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com FCA47N60F — N-Channel SuperFET® FRFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 6 www.fairchildsemi.com FCA47N60F — N-Channel SuperFET® FRFET® MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 8 www.fairchildsemi.com FCA47N60F — N-Channel SuperFET® FRFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® AX-CAP®* FRFET® ® SM Global Power Resource PowerTrench BitSiC™ TinyBoost® GreenBridge™ PowerXS™ Build it Now™ TinyBuck® Programmable Active Droop™ CorePLUS™ Green FPS™ TinyCalc™ ® QFET CorePOWER™ Green FPS™ e-Series™ TinyLogic® CROSSVOLT™ QS™ Gmax™ TINYOPTO™ CTL™ Quiet Series™ GTO™ TinyPower™ Current Transfer Logic™ RapidConfigure™ IntelliMAX™ TinyPWM™ DEUXPEED® ISOPLANAR™ ™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder TranSiC™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TriFault Detect™ SignalWise™ EfficentMax™ MegaBuck™ TRUECURRENT®* SmartMax™ MICROCOUPLER™ ESBC™ μSerDes™ SMART START™ MicroFET™ ® Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® UHC® STEALTH™ MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperFET® MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-3 mWSaver® FACT® VCX™ OptoHiT™ SuperSOT™-6 FAST® ® VisualMax™ OPTOLOGIC SuperSOT™-8 FastvCore™ ® ® VoltagePlus™ OPTOPLANAR SupreMOS FETBench™ SyncFET™ XS™ FPS™ Sync-Lock™ 仙童 ™