Anpec APM2070PUC-TRL P-channel enhancement mode mosfet Datasheet

APM2070PU
P-Channel Enhancement Mode MOSFET
Features
•
Pin Description
-20V/-8A,
RDS(ON)=78mΩ (typ.) @ VGS=-10V
RDS(ON)=113mΩ (typ.) @ VGS=-4.5V
•
•
•
G
Super High Dense Cell Design
D
S
Reliable and Rugged
Top View of TO-252
Lead Free Available (RoHS Compliant)
S
Applications
•
Power Management in Desktop Computer or
G
DC/DC Converters
D
P-Channel MOSFET
Ordering and Marking Information
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150° C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2070P
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2070P U :
APM2070P
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
1
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APM2070PU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±16
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
-4
A
TC=25°C
-20
TC=100°C
-12
TC=25°C
-8
TC=100°C
-5
TC=25°C
50
TC=100°C
20
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
2.5
Thermal Resistance-Junction to Case
A
A
W
°C/W
2
Mounted on PCB of 1in Pad Area
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
TA=25°C
-20
TA=100°C
-12
TA=25°C
-4
TA=100°C
-3
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Ambient
50
A
A
W
°C/W
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
2
TA=25°C
-20
TA=100°C
-12
TA=25°C
-3
TA=100°C
-2
TA=25°C
1.6
TA=100°C
0.6
75
A
A
W
°C/W
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APM2070PU
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM2070PU
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
VGS=0V, IDS=-250µA
V
VDS=-16V, VGS=0V
-1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
Gate Leakage Current
VGS=±16V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance
-20
-30
-0.7
-0.9
µA
-1.5
V
±100
nA
VGS=-10V, IDS=-5A
78
102
VGS=-4.5V, IDS=-2.8A
120
150
ISD=-0.5A , VGS=0V
-0.7
-1.3
mΩ
Diode Characteristics
VSDa
Diode Forward Voltage
V
Dynamic Characteristicsb
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
VDD=-10V, RL=10Ω,
IDS=-1A, VGEN=-4.5V,
RG=6Ω
Turn-off Fall Time
Ω
13
500
pF
150
120
13
25
36
67
45
83
37
69
17
22
ns
b
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Note:
VDS=-10V, VGS=-4.5V,
IDS=-5A
4
nC
5.2
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
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APM2070PU
Typical Characteristics
Drain Current
Power Dissipation
60
10
8
-ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
6
4
2
10
o
0
o
TC=25 C
0
20 40
0
60 80 100 120 140 160 180
0
20 40
60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
10
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
80
-ID - Drain Current (A)
TC=25 C,VG=-10V
100ms
1s
DC
1
o
TC=25 C
0.1
0.1
1
10
60
Rev. B.2 - Oct., 2005
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
2
0.01
1E-4
Mounted on 1in pad
o
RθJA :50 C/W
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
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APM2070PU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
200
20
VGS= -5,-6,-7,-8,-9,-10V
180
RDS(ON) - On - Resistance (mΩ)
18
-ID - Drain Current (A)
16
14
-4V
12
10
8
6
-3V
4
160
140
VGS= -4.5V
120
100
VGS= -10V
80
60
40
20
2
-2V
0
0
1
2
3
4
5
6
7
8
9
0
10
4
6
8
10 12 14 16 18 20
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.8
18
1.6
Normalized Threshold Vlotage
IDS =-250µA
16
-ID - Drain Current (A)
2
-VDS - Drain - Source Voltage (V)
20
14
o
Tj=125 C
12
o
Tj=-55 C
o
10
Tj=25 C
8
6
4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2
0
0
1
2
3
4
5
0.0
-50 -25
6
Rev. B.2 - Oct., 2005
25
50
75 100 125 150
Tj - Junction Temperature (°C)
-VGS - Gate - Source Voltage (V)
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APM2070PU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
2.2
VGS = - 10V
IDS = -5A
10
1.8
1.6
-IS - Source Current (A)
Normalized On Resistance
2.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
o
Tj=150 C
o
Tj=25 C
1
o
RON@Tj=25 C: 78mΩ
0.0
-50 -25
0
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
75 100 125 150
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
800
VDS= -10V
Frequency=1MHz
700
-VGS - Gate-source Voltage (V)
IDS= -5A
C - Capacitance (pF)
600
Ciss
500
400
300
200
Coss
100
0
Crss
0
2
4
6
8
4
2
0
5
10
15
20
25
30
35
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Rev. B.2 - Oct., 2005
6
0
10 12 14 16 18 20
Copyright  ANPEC Electronics Corp.
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APM2070PU
Package Information
TO-252 (Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
D1
A1
E1
Dim
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.18
2.39
0.086
0.094
A1
0.89
1.27
0.035
0.050
b
0.508
0.89
0.020
0.035
b2
5.207
5.461
0.205
0.215
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.334
6.22
0.210
0.245
6.73
0.250
D1
E
5.2 REF
6.35
E1
0.205 REF
5.3 REF
0.265
0.209 REF
e1
3.96
5.18
0.156
0.204
H
9.398
10.41
0.370
0.410
L
0.51
L1
0.64
1.02
0.025
0.040
L2
0.89
2.032
0.035
0.080
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
0.020
7
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APM2070PU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (T L)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
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APM2070PU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s
Package Thickness
Volume mm 3
Volume mm 3
<350
≥350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm 3
Volume mm 3
Volume mm 3
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
D1
9
Ko
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APM2070PU
Carrier Tape & Reel Dimensions (Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
F
D
D1
Po
7.5 ± 0.1
1.5 +0.1
T1
T2
16.4 + 0.3 2.5± 0.5
-0.2
1.5± 0.25 4.0 ± 0.1
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
(mm)
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
10
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