BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCES VCEO Parameter Value Units : BD433 : BD435 : BD437 22 32 45 V V V Collector-Emitter Voltage : BD433 : BD435 : BD437 22 32 45 V V V Collector-Emitter Voltage : BD433 : BD435 : BD437 22 32 45 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 7 A IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 1 A 36 W Junction Temperature 150 °C Storage Temperature - 65 ~ 150 °C ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 Symbol VCEO(sus) ICBO ICEO Parameter Collector-Emitter Sustaining Voltage : BD433 : BD435 : BD437 Emitter Cut-off Current * DC Current Gain Max. 22 32 45 Units V V V : BD433 : BD435 : BD437 VCB = 22V, IE = 0 VCB = 32V, IE = 0 VCB = 45V, IE = 0 100 100 100 µA µA µA : BD433 : BD435 : BD437 VCE = 22V, VBE = 0 VCE = 32V, VBE = 0 VCE = 45V, VBE = 0 100 100 100 µA µA µA 1 mA 0.5 0.5 0.6 V V V 1.1 1.1 1.2 V V V : BD433/435 : BD437 : ALL DEVICE : BD433/435 : BD437 fT Typ. Collector Cut-off Current hFE VBE(on) IC = 100mA, IB = 0 Min. Collector Cut-off Current IEBO VCE(sat) Test Condition * Collector-Emitter Saturation Voltage : BD433 : BD435 : BD437 * Base-Emitter ON Voltage : BD433 : BD435 : BD437 Current Gain Bandwidth Product VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 1V, IC = 500mA VCE = 1V, IC = 2A 40 30 85 50 40 IC = 2A, IB = 0.2A 0.2 0.2 0.2 VCE = 1V, IC = 2A VCE = 1V, IC = 250mA 130 130 140 3 MHz * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD433/435/437 Electrical Characteristics TC=25°C unless otherwise noted BD433/435/437 Typical Characteristics 1 1000 100 10 1 0.01 0.1 1 10 IC = 10 IB VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 1V 0.1 0.01 0.1 100 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 5.0 IC[A], COLLECTOR CURRENT 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 CCBO(pF), COLLECTOR BASE CAPACITANCE 1000 VCE = 1V 4.5 100 10 1 0.1 1 VBE[V], BASE-EMITTER VOLTAGE 10µ s 42 PC[W], POWER DISSIPATION 1 ms ms 100µs 10 DC 1 BD433 BD435 BD437 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 48 IC MAX. (Pulsed) 0.1 100 Figure 4. Collector-Base Capacitance 10 IC Max. (Continuous) 10 VCB[V], COLLECTOR BASE VOLTAGE Figure 3. Base-Emitter On Voltage IC[A], COLLECTOR CURRENT 10 100 36 30 24 18 12 6 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 BD433/435/437 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H2