Microsemi APTM100A23STG Phase leg series & parallel diodes mosfet power module Datasheet

APTM100A23STG
Phase leg
Series & parallel diodes
MOSFET Power Module
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
NTC2
V BUS
Q1
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G1
OUT
S1
Q2
G2
0/VBUS
S2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
S1
S2
NTC2
G1
G2
NTC1
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
36
27
144
±30
270
694
18
50
2500
Unit
V
A
V
mΩ
W
A
July, 2006
OUT
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM100A23STG – Rev 3
OUT
VBUS
0/VBUS
VDSS = 1000V
RDSon = 230mΩ typ @ Tj = 25°C
ID = 36A @ Tc = 25°C
APTM100A23STG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 18A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 36A
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
8700
1430
240
308
mΩ
V
nA
pF
nC
35
2092
µJ
760
µJ
902
Min
200
Tj = 25°C
Tj = 125°C
Tc = 85°C
ns
121
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 36A, R G = 2.5Ω
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Unit
12
1278
IF = 60A
VR = 133V
di/dt = 400A/µs
Max
µA
10
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 36A, R G = 2.5Ω
IF = 60A
IF = 120A
IF = 60A
Unit
194
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 36A
R G = 2.5Ω
VR=200V
Max
200
1000
270
5
±150
52
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
230
3
Min
Series diode ratings and characteristics
IRM
Typ
Typ
Max
350
600
Tj = 125°C
60
1.1
1.4
0.9
Tj = 25°C
24
Tj = 125°C
48
Tj = 25°C
66
Tj = 125°C
300
Unit
V
µA
A
1.15
V
ns
July, 2006
IDSS
Test Conditions
VGS = 0V,VDS= 1000V
nC
2–7
APTM100A23STG – Rev 3
Symbol Characteristic
APTM100A23STG
Parallel diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR=1000V
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 667V
di/dt = 400A/µs
Min
1000
Tj = 25°C
Tj = 125°C
Tc = 65°C
Tj = 125°C
Tj = 25°C
290
Tj = 125°C
Tj = 25°C
Tj = 125°C
390
1340
4700
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
Transistor
Diode
Junction to Case Thermal Resistance
To Heatsink
M5
2500
-40
-40
-40
2.5
R 25
µA
2.3
V
ns
nC
Max
0.18
0.65
Unit
°C/W
V
Typ
50
3952
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

July, 2006
RT =
Min
Unit
V
A
150
125
100
4.7
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
Max
350
600
60
1.9
2.2
1.7
Thermal and package characteristics
RthJC
Typ
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3–7
APTM100A23STG – Rev 3
IRM
Test Conditions
APTM100A23STG
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
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4–7
APTM100A23STG – Rev 3
July, 2006
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
APTM100A23STG
Thermal Impedance (°C/W)
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.18
0.9
0.16
0.7
0.14
0.12
0.5
0.1
0.08
0.3
0.06
Single Pulse
0.04
0.1
0.02
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
160
100
7V
V GS=15&8V
80
6.5V
60
6V
40
5.5V
20
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
140
ID, Drain Current (A)
120
100
80
60
T J=25°C
40
20
5V
0
0
5
10
15
20
25
TJ=125°C
30
0
ID, DC Drain Current (A)
4
5
6
7
8
9 10
VGS =20V
1
0.9
35
30
25
20
15
10
0.8
5
0
0
20
40
60
80
100
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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July, 2006
RDS(on) Drain to Source ON Resistance
VGS=10V
1.1
3
40
Normalized to
VGS =10V @ 18A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
1.4
T J=-55°C
0
5–7
APTM100A23STG – Rev 3
I D, Drain Current (A)
120
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=18A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by
RDSon
100
1ms
Single pulse
TJ=150°C
TC=25°C
10
10ms
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=36A
TJ=25°C
12
10
VDS=200V
V DS =500V
VDS=800V
8
6
4
2
0
0
50 100 150 200 250 300 350 400
Gate Charge (nC)
July, 2006
0
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
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6–7
APTM100A23STG – Rev 3
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100A23STG
APTM100A23STG
Delay Times vs Current
Rise and Fall times vs Current
60
160
td(off)
VDS=667V
RG=2.5Ω
TJ=125°C
L=100µH
50
120
100
V DS=667V
RG =2.5Ω
T J=125°C
L=100µH
80
60
40
tr and tf (ns)
30
tr
20
40
t d(on)
20
10
0
0
10
20
30
40
50
60
70
80
10
20
30
40
50
60
I D, Drain Current (A)
ID, Drain Current (A)
80
5
V DS =667V
RG =2.5Ω
T J=125°C
L=100µH
3
Eon
2
Switching Energy (mJ)
Eoff
1
V DS =667V
ID=36A
T J=125°C
L=100µH
4
3
Eoff
Eon
2
Eoff
1
0
0
10
20
30
40
50
60
70
80
0
ID, Drain Current (A)
3
5
8
10
13
15
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
250
ZVS
200
ZCS
150
I DR, Reverse Drain Current (A)
300
VDS=667V
D=50%
RG=2.5Ω
T J=125°C
T C=75°C
100
Hard
switching
50
100
0
14
18
22
26
30
ID, Drain Current (A)
34
TJ=150°C
T J=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
July, 2006
Switching Energy (mJ)
70
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
Frequency (kHz)
tf
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7–7
APTM100A23STG – Rev 3
td(on) and td(off) (ns)
140
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