MJD210 MJD210 D-PAK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 40 Units V - 25 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -8 V IC Collector Current (DC) -5 A ICP Collector Peck Current (Pulse) - 10 A IB Base Current -1 A PC Collector Dissipation (TC = 25°C) 12.5 W Collector Dissipation (Ta = 25°C) 1.4 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage Test Condition IC = - 10mA, IB = 0 Min. -25 Max. Units V ICBO Collector Cut-off Current VCB = - 40V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEBO = - 8V, IC = 0 -100 nA hFE * DC Current Gain VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A VCE(sat) * Collector-Emitter Saturation Voltage 70 45 10 IC = - 500mA, IB= - 50mA IC = - 2A, IB = - 200mA IC = - 5A, IB = - 1A 180 -0.3 -0.75 -1.8 V V V VBE(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 1A -2.5 V VBE(on) * Base-Emitter ON Voltage VCE = - 1V, IC = - 2A -1.6 V fT Current Gain Bandwidth Product VCE = - 10V, IC = - 100mA Cob Output Capacitance VCB = - 10V, IE = 0, f = 0.1MHz 65 MHz 120 pF * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD210 Typical Characteristics -10 100 VCE=-2V VCE=-1V 10 1 -0.01 -0.1 -1 -10 VCE(sat),VBE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 IC =10IB -1 VBE(sat) -0.1 -0.01 -0.01 IC[A], COLLECTOR CURRENT VCE(sat) -0.1 -1 -10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 tR,tD[ns], TURN ON TIME Cob[pF], CAPACITANCE VCC =-30V IC=10IB 100 10 1 -0.1 -1 -10 1 tR 0.1 tD 0.01 -0.01 -100 VCB[V], COLLECTOR BASE VOLTAGE -10 Figure 4. Turn On Time -100 1000 tSTG tF -0.1 -1 IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation -10 5m s 50 0 1 µs m σ 100 -10 0m 10 IC[A], COLLECTOR CURRENT VCC=-30V IC =10IB IB1=IB2 tSTG,tF[ns], TURN OFF TIME -1 IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance 10 -0.01 -0.1 s DC -1 -0.1 -0.01 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A2, June 2001 MJD210 Typical Characteristics (Continued) 20.0 Pc[W], POWER DISSIPATION 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD210 Package Demensions D-PAK 0.50 ±0.10 MIN0.55 0.91 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (3.05) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.90) 6.10 ±0.20 2.30 ±0.10 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3