IXYS GS150TA25110 Gallium arsenide schottky rectifier Datasheet

GS150TA25110
GS150TI25110
Gallium Arsenide Schottky Rectifier
Isolated Surface Mount Package
Preliminary Data
VRSM VRRM
V
V
Type
Part
Number
250
250
GS150
TI25110
Triple
Independent
250 250
GS150
TC25110
Triple
Common cathode
250 250
GS150
TA25110
Triple
Common anode
A1
T R IP L E
IN D E P E N D E N T
(T I)
C1
A2
C2
A3
C3
Configuration
A1
TRIPLE
COMMON
CATHODE
(TC)
GS150TC25110
I DC
= 10 A
V RRM = 250 V
CJunction = 18 pF
C1
A2
C2
A3
C3
TRIPLE
COMMON
ANODE
(TA)
A1
C1
A2
C2
A3
C3
Symbol
Conditions
Maximum Ratings
I FAV
IFAV
TC = 25°C; DC
TC = 90°C; DC
10
9
A
A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
20
A
-55...+175
-55...+150
°C
°C
25
>2500
>600
W
V
V
TVJ
Tstg
A = Anode, C = Cathode
Features
●
●
●
●
●
Ptot
Isolation
Isolation
TC = 25°C (20W/device)
(Substrate to Case)
(Diode to Diode)
Symbol
Conditions
●
●
Low forward voltage
Very high switching speed
Trr <15ns
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
Applications
IR
VF
CJ
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
1.3
1.3
IF = 5 A;
IF = 5 A;
TVJ = 125°C
TVJ = 25°C
1.3
1.2
VR = 100 V; TVJ = 125°C
18
1.5
●
(SMPS)
mA
mA
●
●
High frequency converters
Resonant converters
V
V
pF
RthJC
6
K/W
Weight
2
g
Pulse test:
MHz switched mode power supplies
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data per diode unless otherwise specified
IXYSRF reserves the right to change limits, conditions and dimensions
© 2003 IXYSRF/Directed Energy, Inc.
IXYSRF/Directed Energy, Inc.
2401 Research Blvd. Ste 108, Fort Collins, CO 80526
Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-503-0, Fax: +49-6206-503627
GS150TA25110
GS150TI25110
100.00
GS150TC25110
1000
CAPACITANCE IN pF
CAPACITANCE
Amperes
10.00
1.00
0.10
0.00
100
10
0.50
1.00
1.50
0.1
2.00
1
100
1000
REVERSE BIAS VOLTAGE IN VOLTS
Volts
Fig. 2 Typical junction capacity
versus blocking voltage
Fig. 1Typical forward characteristics
300
160
140
250
120
TEMPERATURE IN C
REVERSE VOLTAGE
10
200
150
100
50
100
80
60
40
20
0
1.00E-06
1.00E-05
1.00E-04
0
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
LEAKAGE CURRENT IN AMPERES
LEAKAGE CURRENT IN AMPERES
Fig. 3 Typical leakage current vs. voltage at 25C
Fig. 4 Typical leakage current vs. temperature at 100V
Explanatory comparison of the basic operational behavior of rectifier diodes and Gallium Arsenide
Schottky diodes:
Conduction
Rectifier Diode
By majority + minority carriers
GaAs Schottky Diode
By majority carriers only
Forward characteristics VF (IF)
VF (IF), see Fig. 1
Turn off characteristics
Extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
Reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependent
Turn on characteristics
Delayed saturation leads to VFR
No turn on overvoltage peak
Doc #9200-0262 Rev 1
© 2003 IXYSRF/Directed Energy, Inc.
IXYSRF/Directed Energy, Inc.
2401 Research Blvd. Ste 108, Fort Collins, CO 80526
Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-503-0, Fax: +49-6206-503627
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