AOSMD AO6700L N-channel enhancement mode field effect transistor with schottky diode Datasheet

AO6700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO6700 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6700 is Pb-free (meets ROHS & Sony
259 specifications). AO6700L is a Green Product ordering
option. AO6700 and AO6700L are electrically identical.
VDS (V) = 20V
ID = 4.1A (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 65mΩ (VGS = 2.5V)
RDS(ON) < 95mΩ (VGS = 1.8V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<[email protected]
D
K
S
A
TSOP6
Top View
K
S
G
A
D
D
1 6
2 5
3 4
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain Current
Pulsed Drain Current
A
TA=70°C
B
IDM
VKA
Schottky reverse voltage
TA=25°C
Continuous Forward Current
Pulsed Forward Current
A
TA=70°C
B
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient
A
C
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient
C
A
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
±8
4.1
V
3.3
A
10
IF
PD
Schottky
20
IFM
TA=25°C
Maximum Junction-to-Lead
ID
MOSFET
20
1.5
V
1
A
1.39
10
0.78
0.89
0.5
-55 to 150
-55 to 150
°C
Typ
Max
Units
70
90
102
51
130
80
129
160
158
52
200
80
W
°C/W
°C/W
AO6700
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Conditions
Min
ID=250µA, VGS=0V
20
5
Gate-Body leakage current
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
10
nA
0.6
1
V
41.6
50
63
80
VGS=2.5V, ID=3.6A
54
65
mΩ
VGS=1.8V, ID=3A
74
95
mΩ
VDS=5V, ID=4.1A
10.5
1
V
1.8
A
550
pF
TJ=125°C
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
A
0.8
449
VGS=0V, VDS=10V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
µA
100
VGS=4.5V, ID=4.1A
IS
Units
V
TJ=55°C
Static Drain-Source On-Resistance
Max
1
VDS=16V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
74
pF
51.6
pF
VGS=0V, VDS=0V, f=1MHz
4.9
6
Ω
5.9
7.2
nC
VGS=4.5V, VDS=10V, ID=4.1A
0.36
nC
nC
Qgd
Gate Drain Charge
1.3
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
6
ns
32.7
ns
7.1
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=5V, VDS=10V, RL=2.35Ω,
RGEN=0Ω
trr
Body Diode Reverse Recovery Time
IF=4.1A, dI/dt=100A/µs
13
Qrr
Body Diode Reverse Recovery Charge IF=4.1A, dI/dt=100A/µs
3.3
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=0.5A
0.39
16
ns
nC
0.5
V
0.02
VR=16V
VR=16V, TJ=125°C
Irm
Maximum reverse leakage current
CT
Junction Capacitance
trr
Schottky Reverse Recovery Time
VR=10V
IF=1A, dI/dt=100A/µs
5.2
Qrr
Schottky Reverse Recovery Charge
IF=1A, dI/dt=100A/µs
0.8
20
34
mA
pF
10
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 2 : Sept 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6700
MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
16
VGS=5V
VGS =2.0V
8
25°C
125°C
6
8
ID(A)
ID(A)
12
VGS =1.5V
4
4
2
VGS =1.0V
0
0
0
1
2
3
4
5
0.0
0.5
VDS(Volts)
Figure 1: On-Regions Characteristi
1.5
2.0
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
cs
1.6
90
ID=4.1A
Normalize ON-Resistance
VGS =1.8V
80
RDS(ON)(mΩ)
1.0
70
VGS =2.5V
60
50
40
VGS =4.5V
1.4
VGS=1.8V
VGS=2.5V
1.2
VGS=4.5V
1.0
30
0
2
4
6
8
0.8
10
0
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
90
1E+01
80
1E+00
ID=4.1A
125°C
1E-01
70
60
IS(A)
RDS(ON)(mΩ)
25
125°C
1E-02
1E-03
50
40
25°C
1E-04
25°C
1E-05
30
0
2
4
6
8
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
VSD(Volts)
Figure 6: Body-Diode Characteristics
1.0
AO6700
MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VDS=4.5V
Capacitance (pF)
VGS(Volts)
700
ID=4.1A
4
3
2
1
600
Ciss
500
400
Crss
300
200
Coss
100
0
0
0
1
2
3
0
4
10
15
20
12
100
RDS(ON)
limited
10
ID(A)
1ms
0.1s
100µs
10ms
1s
1
Power (W)
10µs
10
8
6
4
10s
TJ(Max) =150°C
TA =25°C
2
DC
0.1
0
0.1
1
10
100
0.001
VDS(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
10
ZθJA Normalized Transient
Thermal Resistance
5
VDS(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
D=Ton/T
TJ,PK=TA+PDM.Z θJA.R θJA
RθJA=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Alpha & Omega Semiconductor, Ltd.
T
100
1000
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