AP95U03GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible
▼ Low On-resistance
30V
RDS(ON)
4mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
90A
S
D
D
Description
D
D
AP95U03 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
S
S
S
G
®
PMPAK 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+12
V
ID@TC=25℃
Drain Current (Chip), VGS @ 10V
90
A
28
A
22
A
240
A
ID@TA=25℃
ID@TA=70℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
50
W
PD@TA=25℃
Total Power Dissipation
5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
3
Value
Units
2.5
℃/W
25
℃/W
1
201501062
AP95U03GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=30A
-
3.2
4
mΩ
VGS=4.5V, ID=20A
-
4.3
4.9
mΩ
1.2
1.45
2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=30A
-
75
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=20A
-
34
54
nC
Qgs
Gate-Source Charge
VDS=15V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
18
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
13
-
ns
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
52
-
ns
tf
Fall Time
VGS=10V
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
3350 5360
pF
Coss
Output Capacitance
VDS=15V
-
460
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
375
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
32
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95U03GMT-HF
200
160
10V
7.0V
6.0V
5.0V
V G = 4.0V
ID , Drain Current (A)
160
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
120
80
120
80
40
40
0
0
0
2
4
6
8
10
0
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
5.4
I D =30A
V G =10V
I D =20A
T C =25 o C
Normalized RDS(ON)
5
4.6
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
4.2
1.6
1.2
3.8
0.8
3.4
0.4
3
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
I D =250uA
T j =150 o C
T j =25 o C
1.2
Normalized VGS(th)
IS(A)
30
20
10
0.8
0.4
0
0.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95U03GMT-HF
10
f=1.0MHz
4000
C iss
8
3000
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
V DS =15V
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
80
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Operation in this
area limited by
RDS(ON)
ID (A)
100
100us
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (R thjc)
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.001
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP95U03GMT-HF
MARKING INFORMATION
95U03GMT
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : MT
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5