AME AME8803EEEY 300ma cmos ldo Datasheet

Analog Microelectronics, Inc.
AME8803/8814
300mA CMOS LDO
n General Description
n Features
The AME8803 family of positive, linear regulators feature low quiescent current (30µA typ.) with low dropout
voltage, making them ideal for battery applications. The
space-saving SOT-23-6 package is attractive for
"Pocket" and "Hand Held" applications.
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These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under
the "Worst" of operating conditions.
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An additional feature is a "Power Good" detector, which
pulls low when the output is out of regulation. In applications requiring a low noise, regulated supply, place a
1000pF capacitor between Bypass and ground.
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The AME8803 is stable with an output capacitance of
2.2µF or greater.
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Very Low Dropout Voltage
Guaranteed 300mA Output
Accurate to within 1.5%
30µA Quiescent Current
Over-Temperature Shutdown
Current Limiting
Short Circuit Current Fold-back
Noise Reduction Bypass Capacitor
Power Good Detector
Power-Saving Shutdown Mode
Space-Saving SOT-26 (SOT-23-6)
Factory Pre-set Output Voltages
Low Temperature Coefficient
n Applications
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n Functional Block Diagram
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IN
OUT
Overcurrent
Shutdown
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Instrumentation
Portable Electronics
Wireless Devices
Cordless Phones
PC Peripherals
Battery Powered Widgets
Electronic Scales
n Typical Application
Thermal
Shutdown
EN
IN
EN
BYP
PG
V ref
PG
AME8803
IN
BYP
GND
OUT
OUT
R1
x110%
AMP
5V
C1
C2
1µF
1nF
C3
2.2µF
R2
V ref x90%
V ref =1.215V
GND
1
Analog Microelectronics, Inc.
300mA CMOS LDO
AME8803/8814
n Pin Configuration
AME8814
SOT-26 W Top View
AME8803
SOT-26 Top View
6
1
5
2
6
4
3
4. PG
5. BYP
6. VOUT
1. VIN
2. GND
3. EN
1
5
2
4
3
n Ordering Information
2
Output Package
Operating
Temp.
Part Number
Marking
AME8803AEEY
AAPww
3.3V
SOT-26
-40OC to +85OC
AME8803BEEY
AAQww
3.0V
SOT-26
-40OC to +85OC
AME8803CEEY
AARww
2.8V
SOT-26
-40OC to +85OC
AME8803DEEY
AASww
2.5V
SOT-26
-40OC to +85OC
AME8803EEEY
AATww
3.8V
SOT-26
-40OC to +85OC
AME8803FEEY
ABQww
3.6V
SOT-26
-40OC to +85OC
AME8803GEEY
ACHww
3.5V
SOT-26
-40OC to +85OC
AME8803HEEY
AGKww
2.7V
SOT-26
-40OC to +85OC
AME8803IEEY
AEQww
3.4V
SOT-26
-40OC to +85OC
AME8803JEEY
AGSww
2.85V
SOT-26
-40OC to +85OC
AME8803KEEY
AHUww
3.7V
SOT-26
-40OC to +85OC
AME8803LEEY
AJKww
1.5V
SOT-26
-40OC to +85OC
AME8803MEEY
AJLww
1.8V
SOT-26
-40OC to +85OC
AME8803NEEY
ALAww
2.9V
SOT-26
-40OC to +85OC
AME8803OEEY
ALBww
3.1V
SOT-26
-40OC to +85OC
1. EN
2. GND
3. BYP
4. VOUT
5. GND
6. VIN
Analog Microelectronics, Inc.
AME8803/8814
300mA CMOS LDO
n Ordering Information
Part Number
Marking
Output Package Operating Temp.
AME8814AEEY
AIEww
3.3V
SOT-26
-40OC to +85OC
AME8814BEEY
AIFww
3.0V
SOT-26
-40OC to +85OC
AME8814CEEY
AIGww
2.8V
SOT-26
-40OC to +85OC
AME8814DEEY
AIHww
2.5V
SOT-26
-40OC to +85OC
AME8814EEEY
AIIww
3.8V
SOT-26
-40OC to +85OC
AME8814FEEY
AIJww
3.6V
SOT-26
-40OC to +85OC
AME8814GEEY
AIKww
3.5V
SOT-26
-40OC to +85OC
AME8814HEEY
AILww
2.7V
SOT-26
-40OC to +85OC
AME8814IEEY
AIMww
3.4V
SOT-26
-40OC to +85OC
AME8814JEEY
AINww
2.85V
SOT-26
-40OC to +85OC
AME8814KEEY
AIOww
3.7V
SOT-26
-40OC to +85OC
AME8814LEEY
AJDww
1.5V
SOT-26
-40OC to +85OC
AME8814MEEY
AJEww
1.8V
SOT-26
-40OC to +85OC
AME8814NEEY
AKYww
2.9V
SOT-26
-40OC to +85OC
AME8814OEEY
AKZww
3.1V
SOT-26
-40OC to +85OC
Please consult AME sales office or authorized Rep./Distributor for other output voltage and package type availability.
3
Analog Microelectronics, Inc.
300mA CMOS LDO
AME8803/8814
n Absolute M aximum Ratings:
Parameter
Maximum
Unit
8
V
Output Current
P D / (V IN - V O )
mA
Output Voltage
GND - 0.3 to V IN + 0.3
V
Input Voltage
ESD Classification
B
n Recommended operating Conditions:
Parameter
Rating
Unit
Ambient Temperature Range
-40 to +85
o
C
Junction Temperature
-40 to +125
o
C
n T hermal Information
Parameter
Thermal Resistance (θja)
Package
Maximum
SOT-26
260
Unit
o
Thermal Resistance (θja)
Internal Power Dissipation (P D )
(∆ T = 100oC)
Internal Power Dissipation (P D )
(∆ T = 100oC)
Maximum Junction Temperature
SOT-26W
260
SOT-26
380
C/W
mW
SOT-26W
380
150
o
Maximum Lead Temperature ( 10 Sec)
4
C
300
Caution: Stress above the listed absolute rating may cause permanent damage to the device
Analog Microelectronics, Inc.
AME8803/8814
300mA CMOS LDO
n Electrical Specifications
TA = 25 o C unless otherwise noted
Parameter
Symbol
Input Voltage
V IN
Output Voltage Accuracy
VO
Dropout Voltage
V DROPOUT
Test Condition
Min
IO=1mA
Typ
Max
Units
Note 1
7
V
-1.5
1.5
%
1.2V<V O(NOM)<=2.0V
IO =300mA
V O=V ONOM -2.0%
1300
See
chart
2.0V<V O(NOM)<=2.8V
2.8V<V O(NOM)
Output Current
400
mV
300
IO
V O>1.2V
300
Current Limit
ILIM
V O>1.2V
300
Short Circuit Current
ISC
V O<0.8V
150
300
mA
Quiescent Current
IQ
IO=0mA
30
50
µA
Ground Pin Current
IGND
IO=1mA to 300mA
35
Line Regulation
Load Regulation
REGLINE
REGLOAD
Over Temerature Shutdown
IO=1mA
V IN =V O+1 to V O+2
V O < 2.0V
-0.15
2.0V<=V O < 4.0V
-0.1
4.0V <= Vo
IO=1mA to 300mA
mA
450
%
0.02
0.1
%
-0.4
0.2
0.4
%
-1
0.2
1
150
o
OTH
30
V O Temperature Coefficient
TC
30
PSRR
Output Voltage Noise
eN
CO=2.2µF
f=10Hz to 100kHz
IO=10mA
%
o
Over Temerature Hysterisis
Power Supply Rejection
µA
0.15
OTS
f=1kHz
50
f=10kHz
20
f=100kHz
15
Co=2.2µF
30
IO =100mA
mA
C
C
ppm/ oC
dB
µVrms
V EH
V IN =2.7V to 7V
2.0
Vin
V
V EL
V IN =2.7V to 7V
0
0.4
V
IEH
V EN =V IN , V IN =2.7V to 7V
0.1
µA
IEL
V EN =0V, V IN =2.7V to 7V
0.5
µA
Shutdown Supply Current
ISD
V IN =5V, V O=0V, V EN <V EL
1
µA
Shutdown Output Voltage
V O,SD
IO=0.4mA, V EN <V EL
0.4
V
Output Under Voltage
V UV
Output Over Voltage
V OV
EN Input Threshold
EN Input Bias Current
0.5
0
2.5V <=Vo <= 5.0V
85
1.2V <= Vo < 2.5V
75
2.5V <=Vo <= 5.0V
115
1.2V <= Vo < 2.5V
125
%V O(NOM)
%V O(NOM)
PG Leakage Current
ILC
V PG =7V
1
µA
PG Voltage Rating
V PG
V O in regulation
7
V
PG Voltage Low
V OL
ISINK=0.4mA
0.4
V
Note1:V IN(min)=V OUT+V DROPOUT
5
Analog Microelectronics, Inc.
300mA CMOS LDO
AME8803/8814
n Detailed Description
The AME8803 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier, over-current protection, thermal shutdown, and
Power Good detection circuitry.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference. Over-current and Thermal shutdown circuits become active when the junction temperature exceeds
150oC, or the current exceeds 300mA. During thermal
shutdown, the output voltage remains low. Normal operation is restored when the junction temperature
drops below 120oC.
A third capacitor can be connected between the BYPASS pin and GND. This capacitor can be a low cost
Polyester Film variety between the value of 0.001 ~
0.01µF. A larger capacitor improves the AC ripple rejection, but also makes the output come up slowly. This
"Soft" turn-on is desirable in some applications to limit
turn-on surges.
All capacitors should be placed in close proximity to
the pins. A "Quiet" ground termination is desirable.
This can be achieved with a "Star" connection.
n Enable
The Enable pin normally floats high. When actively,
pulled low, the PMOS pass transistor shuts off, and all
internal circuits are powered down. In this state, the
quiescent current is less than 1µA. This pin behaves
much like an electronic switch.
The AME8803 switches from voltage mode to current
mode when the load exceeds the rated output current.
This prevents over-stress. The AME8803 also incorporates current foldback to reduce power dissipation
when the output is short circuited. This feature becomes
active when the output drops below 0.8volts, and reduces the current flow by 65%. Full current is restored
when the voltage exceeds 0.8 volts.
n Power Good
n External Capacitors
The AME8803 includes the Power Good feature. Normally, Pin 4 is "Floating", however, when the output is
not within ±10% of the specified voltage, it pulls low.
This can occur under the following conditions:
The AME8803 is stable with an output capacitor to
ground of 2.2µF or greater. Ceramic capacitors have
the lowest ESR, and will offer the best AC performance.
Conversely, Aluminum Electrolytic capacitors exhibit
the highest ESR, resulting in the poorest AC response.
Unfortunately, large value ceramic capacitors are comparatively expensive. One option is to parallel a 0.1µF
ceramic capacitor with a 10µF Aluminum Electrolytic.
The benefit is low ESR, high capacitance, and low overall cost.
A second capacitor is recommended between the input
and ground to stabilize Vin. The input capacitor should
be at least 0.1µF to have a beneficial effect.
6
1)
2)
3)
4)
Input Voltage too low.
During Over-Temperature.
During Over-Current.
If output is pulled up.
Analog Microelectronics, Inc.
AME8803/8814
300mA CMOS LDO
Load Step ( 1mA-300mA)
Ground Current vs. Input Voltage
Vo(5mV/DIV)
45
35
85 O C
30
Output
C L =2.2µF
C I N =2.2µF
25
25 O C
20
IL(200mA/DIV)
µA)
Ground Current (µ
40
15
10
5
IL o a d
0
0
0
1
2
3
4
5
6
7
TIME( 20mS/DIV)
8
Input Voltage (V)
C L =2µF
R L =10Ω
C B Y P =1000pF
Enable (2V/DIV)
Chip Enable Transient Response
Output (1V/DIV)
0
C L =2µF
R L =10Ω
0
Output (1V/DIV)
Enable (2V/DIV)
Chip Enable Transient Response
0
0
TIME ( 1mS/DIV)
TIME ( 1mS/DIV)
Drop Out Voltage vs Load Current
Drop Out Voltage vs Output Voltage
250
Dropout Voltage (mV)
Drop Out Voltage (mV)
300
250
200
IL O A D= 3 0 0 m A
150
IL O A D = 2 0 0 m A
100
IL O A D = 1 0 0 m A
50
Top to bottom
V O U T =2.5V
V O U T =2.8V
V O U T =3.0V
V O U T =3.3V
V O U T =3.5V
V O U T =3.8V
200
150
100
50
0
0
2.5
2.75
3
3.25
3.5
Output Voltage (V)
3.75
4
0
50
100
150
200
Load Current (mA)
250
300
7
Analog Microelectronics, Inc.
300mA CMOS LDO
AME8803/8814
Power Supply Rejection Ratio
Power Supply Rejection Ratio
-20
0
-30
-20
-40
1mA
-50
PSRR (dB)
PSRR (dB)
-10
100mA
C L =2.2µF Tantalum
C B Y P =1000pF
100mA
-60
100mA
C L =2.2µF Tantalum
C B Y P =0
-30
-40
-50
10mA
100mA
-60
10mA
-70
100µA
-80
1.0E+01
-70
1.0E+03
1.0E+05
-80
1.0E+01
1.0E+07
Frequency (Hz)
Power Supply Rejection Ratio
-40
C BYP = 0
C B Y P = 100 pF
-30
C L = 10 µF
Tantalum
I L = 100 mA
-40
C B Y P = 100 pF
C L = 5.6 µF
Ceramic
I L = 100 mA
-50
-60
C B Y P = 1 nF
C B Y P = 1 nF
-70
-70
C B Y P = 10 nF
-80
1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
-80
1.0E+01
C B Y P = 10 nF
1.0E+02
1.0E+03
1.0E+04
1.0E+05
Frequency (Hz)
Overtemperature Shutdown
I OUT (200mA/DIV)
Short Circuit Response
ILOAD (400mA/DIV)
C BYP = 0
-20
Frequency (Hz)
R L O A D =100Ω
R S H O R T =0.1Ω
0
R L O A D =6.6Ω
VOUT (1V/DIV)
VOUT (1V/DIV)
0
0
0
TIME (2mS/DIV)
8
1.0E+07
Power Supply Rejection Ratio
-50
-60
1.0E+05
-10
PSRR ( dB)
PSRR ( dB)
-30
1.0E+03
Frequency (Hz)
-10
-20
1mA
100 µA
100 µA
100µA
TIME (0.5Sec/DIV)
Analog Microelectronics, Inc.
AME8803/8814
300mA CMOS LDO
Noise Measurement
IOUT (200mA/DIV)
Current Limit Response
R L O A D =3.3Ω
Vo (1mV/ DIV)
0
VOUT (1V/DIV)
CL = 2.2µF
NO FILTER
0
TIME (2mS/DIV)
TIME (20mS/DIV)
Transient Line Response
VO (1mV/DIV)
VIN DC = 5.0V
CL = 2.2µF
Output Current (mA)
VIN (1V/DIV)
Safe Operating Area
300
SOT-23-5
100
10
0.1
TIME (2mS/DIV)
1.0
8.0
Input-Output Voltage Differential (V)
9
Analog Microelectronics, Inc.
300mA CMOS LDO
AME8803/8814
Stability vs. ESR vs I LOAD
10000
Stability vs. ESR vs I LOAD
10000
Unstable Region
Unstable Region
1000
1000
C L =1µF
10
Stable Region
1
C L =2µF
100
Ω)
ESR (Ω
Ω)
ESR (Ω
100
10
Stable Region
1
0.1
0.1
Untested Region
0
50
100
150
Untested Region
0.01
0.01
0
200
50
10000
Unstable Region
Unstable Region
1000
1000
Ω)
ESR (Ω
Stable Region
1
C L =10µF
100
C L =3µF
100
Ω)
ESR (Ω
200
Stability vs. ESR vs I LOAD
Stability vs. ESR vs I LOAD
10000
10
Stable Region
1
0.1
0.1
0.01
Untested Region
0.01
0
50
100
ILOAD (mA)
10
150
ILOAD (mA)
ILOAD (mA)
10
100
150
Untested Region
0.001
200
0
50
100
ILOAD (mA)
150
200
Analog Microelectronics, Inc.
AME8803/8814
300mA CMOS LDO
Load Regulation vs. Temp.
35
0.58
34
0.56
Load Regulation (%)
Quiescent Current @ 5V
(uA)
Quiescent Current vs. Temp.
33
32
31
30
29
28
27
0.54
0.52
0.50
0.48
0.46
0.44
0.42
0.40
-45
-5
25
55
85
-45
Temperature (0C)
EN pin LO bias current (uA)
Shut Down Current (uA)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
55
0
-0.30
-0.35
-0.40
-0.45
-0.50
-5
85
0.45
210
0.40
PG VOL @ 0.4mA (V)
220
190
180
170
160
55
85
PG VOL vs. Temp.
Dropout Voltage vs. Temp.
200
25
Temperature (0C)
Temperature ( C)
Dropout Voltage @ 300mA
(mV)
85
-0.25
-45
25
55
-0.20
0.0
-5
25
EN pin LO bias Current vs. Temp.
Shut Down Current vs. Temp.
-45
-5
Temperature (0C)
0.35
0.30
0.25
0.20
0.15
150
-45
-5
25
55
0
Temperature ( C)
85
-45
-5
25
55
85
Temperature (0C)
11
Analog Microelectronics, Inc.
300mA CMOS LDO
AME8803/8814
n Package Dimension
SOT-26
SYM BOLS
A
A1
A2
b
C
D
E
e
H
L
θ1
S1
M ILLIM ETERS
M IN
M AX
1.00
1.40
0.00
0.15
0.70
1.25
0.35
0.50
0.08
0.25
2.70
3.10
1.40
1.80
1.90 BSC
INCHES
M IN
M AX
0.0394
0.0551
0.0000
0.0591
0.0276
0.0492
0.0138
0.0197
0.0031
0.0098
0.1063
0.1220
0.0551
0.0709
0.0748 BSC
2.60
0.35
0.1024
0.0138
°
0
0.85
3.00
°
9
1.05
°
0
0.0335
0.1181
°
9
0.0413
SOT-26 (Wide)
SYMBOLS
A
A1
A2
b
C
D
E
e
H
L
θ1
S1
12
MILLIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
1.00
1.40
0.35
0.50
0.10
0.25
2.70
3.10
1.60
2.00
2.60
3.00
0.37
°
°
1
9
0.85
1.05
INCHES
MIN
MAX
0.0937
0.0512
0.000
0.0039
0.0937
0.0551
0.0138
0.0197
0.0039
0.0098
0.1063
0.1220
0.0630
0.0787
0.1024
0.1181
0.0146
°
°
1
9
0.0335
0.0413
www.analogmicro.com
E-Mail: [email protected]
Life Support Policy:
These products of Analog Microelectronics, Inc. are not authorized for use as critical components in lifesupport devices or systems, without the express written approval of the president
of Analog Microelectronics, Inc.
Analog Microelectronics, Inc. reserves the right to make changes in the circuitry and specifications of its
devices and advises its customers to obtain the latest version of relevant information.
 Analog Microelectronics, Inc., August 2001
Document: 2006-DS8803/8814-E
Corporate Headquarters
Asia Pacific Headquarters
Analog Microelectronics, Inc.
AME, Inc.
3100 De La Cruz Blvd. Suite 201
Santa Clara, CA. 95054-2046
2F, 187 Kang-Chien Road, Nei-Hu District
Taipei 114, Taiwan, R.O.C.
Tel : (408) 988-2388
Fax: (408) 988-2489
Tel : 886 2 2627-8687
Fax : 886 2 2659-2989
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