SeCoS MMBTA42 General purpose transistor Datasheet

MMBTA42
NPN Silicon
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
FEATURES
·
·
·
A suffix of "-C" specifies halogen & lead-free
SOT-23
Plastic-Encapsulate Transistors
Power dissipation & Collector current
Pcm: 0.3W Icm: 0.3A
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
High voltage V(BR): 300V
A
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
L
COLLECTOR
3
3
1
1
Top View
B S
2
BASE
V
G
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
3
2
EMITTER
C
1
2
D
č Tamb=25¥
ELECTRICAL CHARACTERISTICS
Parameter
H
unless
Symbol
J
K
otherwise
Test
All Dimension in mm
Ď
specified
conditions
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 μA,
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 1 mA,
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
Collector cut-off current
ICBO
VCB=200 V , IE=0
Emitter cut-off current
IEBO
VEB= 5V ,
IE=0
IB=0
MIN
MAX
UNIT
300
V
300
V
5
V
IC=0
0.25
μA
0.1
μA
HFE(1)
VCE= 10V, IC= 1mA
60
HFE(2)
VCE= 10V, IC=10mA
100
HFE(3)
VCE=10V, IC=30mA
60
Collector-emitter saturation voltage
VCE(sat)
IC=20 mA, IB= 2mA
0.2
V
Base-emitter saturation voltage
VBE(sat)
IC= 20 m A, IB=2mA
0.9
V
DC current gain
200
VCE= 20V, IC= 10mA
Transition frequency
fT
50
MHz
f=30MHz
DEVICE MARKING
MMBTA42=1D
http://www.SeCoSGmbH.com
01-June-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 2
MMBTA42
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
MMBTA42
120
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
100
80
25°C
60
40
−55°C
20
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
f,
T CURRENT−GAIN BANDWIDTH (MHz)
100
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
80
70
60
50
40
30
TJ = 25°C
VCE = 20 V
f = 20 MHz
20
10
1.0
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 3. Current−Gain − Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ −55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
0.6
VBE(sat) @ −55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ −55°C, VCE = 10 V
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. “ON” Voltages
http://www.SeCoSGmbH.com
01-June-2004 Rev. B
Any changing of specification will not be informed individual
Page 2 of 2
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