NEC NESG3031M14-T3 Necs npn sige high frequency tran sis tor Datasheet

PRELIMINARY DATA SHEET
NEC's NPN SiGe
NESG3031M14
HIGH FREQUENCY TRANSISTOR
FEATURES
•
LOW NOISE FIGURE AND HIGH-GAIN
NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
•
MAXIMUM STABLE POWER GAIN:
MSG = 15.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
•
SiGe HBT TECHNOLOGY:
USH3 process, fmax = 110 GHz
•
M14 PACKAGE:
4-pin lead-less minimold package
ORDERING INFORMATION
PART NUMBER
QUANTITY
SUPPLYING FORM
NESG3031M14
50 pcs (Non reel)
• 8 mm wide embossed taping
NESG3031M14-T3
10 kpcs/reel
• Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
IC
35
mA
Ptot Note
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Collector Current
Total Power Dissipation
Note Mounted on 1.08 cm2 × 1.0 mm, (t) glass epoxy PCB
California Eastern Laboratories
NESG3031M14
ELECTRICAL CHARACHTERISTICS (TA = 25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
100
nA
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
VCB = 5 V, IE = 0 mA
IEBO
VEB = 1 V, IC = 0 mA
−
−
100
nA
hFE Note 1
VCE = 2 V, IC = 6 mA
220
300
380
−
|S21e|2
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
6.5
9.0
−
dB
NF
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
−
0.95
−
dB
RF Characteristics
Insertion Power Gain
Noise Figure (1)
ZS = ZSopt, ZL = ZLopt
Noise Figure (2)
NF
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
−
1.1
1.5
dB
Associated Gain (1)
Ga
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
−
10.0
−
dB
Associated Gain (2)
Ga
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
7.5
9.5
−
dB
Reverse Transfer Capacitance
Cre Note 2
Maximum Stable Power Gain
MSGNote 3
Gain 1 dB Compression Output
Power
3rd Order Intermodulation
Distortion Output Intercept Point
VCB = 2 V, IE = 0 mA, f = 1 MHz
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
hFE CLASSIFICATION
RANK
FB
Marking
zJ
hFE Value
220 to 380
0.25
pF
15.0
−
dB
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
−
13.0
−
dBm
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
−
18.0
−
dBm
2. Collector to base capacitance when the emitter grounded
S21
S12
0.15
PO (1 dB)
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
3. MSG =
−
12.0
NESG3031M14
PACKAGE DIMENSIONS (Units in mm)
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)
1.0±0.05
0.15±0.05
2
0.5±0.05
0.11+0.1
-0.05
1
zJ
4
0.8
1.2+0.07
-0.05
3
0.8+0.07
-0.05
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/26/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
Similar pages