Panasonic LNA2802L Gaas infrared light emitting diode Datasheet

Infrared Light Emitting Diodes
LNA2802L (LN68)
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
High-power output, high-efficiency : PO = 5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λP = 940 nm (typ.)
Good radiant power output linearity with respect to input current
2-0.8 max.
2-0.5±0.1
1.0
Long lifetime, high reliability
15.0±1.0
4.5±0.3
5.0±0.2
0.6
Features
Not soldered 2.0 max.
ø3.8±0.2
ø3.0±0.2
ø3 plastic package
0.5±0.1
(1.5)
2.54
Parameter
Symbol
Ratings
Unit
PD
75
mW
Forward current (DC)
IF
50
mA
Pulse forward current
IFP*
1
A
Power dissipation
*
1.7
Absolute Maximum Ratings (Ta = 25˚C)
Reverse voltage (DC)
VR
3
V
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
– 40 to +100
˚C
1
2
1: Anode
2: Cathode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
2.5
typ
max
Unit
Radiant power
PO
IF = 50mA
Peak emission wavelength
λP
IF = 50mA
5
mW
940
nm
Spectral half band width
∆λ
IF = 50mA
50
Forward voltage (DC)
VF
IF = 50mA
1.3
Reverse current (DC)
IR
VR = 3V
Capacitance between terminals
Ct
VR = 0V, f = 1MHz
35
pF
Half-power angle
θ
The angle in which radiant intencity is 50%
20
deg.
nm
1.5
V
10
µA
Note) The part number in the parenthesis shows conventional part number.
1
LNA2802L
Infrared Light Emitting Diodes
IF — Ta
IFP — Duty cycle
10 2
tw = 10µs
Ta = 25˚C
Ta = 25˚C
20
IF (mA)
Pulse forward current
30
10
Forward current
50
40
Allowable forward current
IF — V F
80
70
IFP (A)
IF (mA)
60
1
10 –1
60
50
40
30
20
10
10
20
40
60
80
10 –2
10 –1
100
1
Ambient temperature Ta (˚C )
∆PO — IFP
1.2
10mA
(2)
10 –1
0.8
0.4
0
– 40
1
Pulse forward current IFP (A)
λP — Ta
1000
0
40
80
120
10 2
10
1
– 40
0
40
Spectral characteristics
Directivity characteristics
0˚
IF = 50mA
Ta = 25˚C
Relative radiant intensity (%)
940
920
80
80
70
60
60
50
40
40
30
20
20
10˚
20˚
100
90
960
120
Ambient temperature Ta (˚C )
100
980
80
Ambient temperature Ta (˚C )
IF = 50mA
Peak emission wavelength λP (nm)
1.6
∆PO — Ta
1mA
10 –1
1.2
10 3
IF = 50mA
(1)
10 –2
0.8
IF = 50mA
VF (V)
10
10 –2
10 –3
0.4
VF — Ta
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
1
0
Forward voltage VF (V)
1.6
Forward voltage
Relative radiant power ∆PO
10 2
0
10 2
10
Duty cycle (%)
Relative radiant intensity (%)
0
Relative radiant power ∆PO
0
– 25
30˚
40˚
50˚
60˚
70˚
80˚
90˚
900
– 40
0
40
80
Ambient temperature Ta (˚C )
2
120
0
860
900
940
980
1020 1060 1100
Wavelength λ (nm)
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of
GaAs-containing products.
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and semiconductors described in this material
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2001 MAR
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