IRF IRFHS9351TRPBF Hexfet power mosfet Datasheet

PD - 97572B
IRFHS9351PbF
HEXFET® Power MOSFET
VDS
VGS max
-30
±20
V
V
RDS(on) max
170
mΩ
(@VGS = -10V)
ID
-3.4
(@TC = 25°C)
d
A
T OP VIEW
S1 1
6 D1
S2
D1
G1 2
FET 1
D1
D1
D2
5 G2
D2
D2 3
G2
4 S2
D2
FET 2
G1
S1
2mm x 2mm Dual PQFN
Applications
l
l
Charge and Discharge Switch for Battery Application
System/load switch
Features and Benefits
Features
Low RDSon (≤ 170mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0 mm)
results in
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Orderable part number
IRFHS9351TRPBF
IRFHS9351TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @ TA = 70°C
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
f
f
c
Max.
-30
± 20
-2.3
-1.5
-5.1
-4.1
-3.4
-20
1.4
0.9
Units
0.01
-55 to + 150
W/°C
d
d
d
V
A
W
°C
Notes  through † are on page 2
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1
7/27/11
IRFHS9351PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
VDSS/ TJ
RDS(on)
V GS(th)
VGS(th)
IDSS
IGSS
Min.
Typ.
Max.
Units
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
Breakdown Voltage Temp. Coefficient
–––
0.02
–––
V/°C
–––
135
170
–––
235
290
Static Drain-to-Source On-Resistance
m
Gate Threshold Voltage
-1.3
-1.8
-2.4
V
Gate Threshold Voltage Coefficient
–––
-4.6
–––
mV/°C
Drain-to-Source Leakage Current
–––
–––
-1.0
–––
–––
-150
μA
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
gfs
Forward Transconductance
2.4
–––
–––
S
–––
1.9
–––
nC
–––
3.7
–––
–––
0.6
–––
–––
1.1
–––
h
h
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
h
Gate-to-Drain Charge h
Gate R esistance h
Qgd
RG
nA
Conditions
V GS = 0V, I D = -250μA
Reference to 25°C, ID = -1mA
V GS = -10V, I D = -3.1A
e
e
V GS = -4.5V, ID = -2.5A
V DS = V GS, ID = -10μA
V DS = -24V, VGS = 0V
V DS = -24V, VGS = 0V, T J = 125°C
V GS = -20V
V GS = 20V
V DS = -10V, ID = -3.1A
V DS = -15V,VGS = -4.5V,ID = - 3.1A
V GS = -10V
nC
V DS = -15V
I D = -3.1A
–––
17
–––
Turn-On Delay Time
–––
8.3
–––
V DD = -15V, V GS = -4.5V
tr
Rise Time
–––
30
–––
I D = -3.1A
td(off )
Turn-Off Delay Time
–––
6.3
–––
tf
Fall Time
–––
7.9
–––
Ciss
Input Capacitance
–––
160
–––
td(on)
Coss
Output Capacitance
–––
39
–––
Crss
Reverse Transfer C apacitance
–––
26
–––
Min.
Typ.
Max.
ns
e
RG = 1.8
See Figs. 19a & 19b
V GS = 0V
pF
V DS = -25V
ƒ = 1.0KHz
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
–––
-5.1
–––
–––
-20
c
-1.2
V SD
Diode Forward Voltage
–––
–––
trr
Reverse Recovery Time
–––
20
Qrr
Reverse Recovery Charge
–––
42
Conditions
MOSFET symbol
A
Pulsed Source Current
(Body Diode)
–––
Units
integral reverse
Parameter
JC
(Bottom)
R
JC
(Top)
g
Junction-to-Case g
Junction-to-Case
f
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient (t<10s)
f
G
p-n junction diode.
S
e
V
TJ = 25°C, IS = -3.1A, VG S = 0V
30
ns
63
nC
TJ = 25°C, IF = -3.1A, V DD = -15V
di/dt = 370/μs
e
Thermal Resistance
R
D
showing the
Typ.
Max.
–––
19
–––
170
90
–––
Units
°C/W
75
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package. .
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
.
2
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IRFHS9351PbF
100
100
VGS
-10V
-8.0V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
10
BOTTOM
1
-2.8V
10
BOTTOM
1
-2.8V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
Tj = 150°C
0.1
10
0.1
100
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-ID, Drain-to-Source Current(A)
1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
10
TJ = 150°C
1
TJ = 25°C
VDS = -15V
≤60μs PULSE WIDTH
0.1
1
2
3
4
5
6
7
ID = -3.1A
VGS = -10V
1.4
1.2
1.0
0.8
0.6
8
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics
1000
Fig 4. Normalized On-Resistance vs. Temperature
14
VGS = 0V,
f = 1 KHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
-VGS, Gate-to-Source Voltage (V)
ID= -3.1A
Coss = Cds + Cgd
Ciss
100
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
-10V
-8.0V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
Coss
Crss
VDS= -24V
12
VDS= -15V
10
8
6
4
2
0
10
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
1
2
3
4
5
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRFHS9351PbF
100
-ID, Drain-to-Source Current (A)
-ISD, Reverse Drain Current (A)
100
10
TJ = 150°C
1
TJ = 25°C
VGS = 0V
0.6
0.8
1.0
1.2
10
1
DC
0.1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.4
1
10
100
VDS, Drain-to-Source Voltage (V)
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
6
-V GS(th), Gate threshold Voltage (V)
2.5
5
ID , Drain Current (A)
100μsec
1msec
0.01
0.1
0.4
OPERATION IN THIS AREA
LIMITED BY RDS(on)
4
3
2
1
0
25
50
75
100
125
150
2.0
ID = -10uA
1.5
1.0
0.5
-75 -50 -25
TC , CaseTemperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
Thermal Response ( ZthJC )
100
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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500
( Ω)
RDS(on), Drain-to -Source On Resistance m
RDS(on), Drain-to -Source On Resistance (mΩ)
IRFHS9351PbF
ID = -3.1A
400
300
TJ = 125°C
200
TJ = 25°C
100
0
5
10
15
20
500
400
300
Vgs = -4.5V
200
Vgs = -10V
100
25
0
2
4
6
8
-ID, Drain Current (A)
-VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
400
Power (W)
300
200
100
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
Fig 14. Typical Power vs. Time
D.U.T *
Driver Gate Drive
ƒ
+
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
di/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
+
-
Re-Applied
Voltage
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Body Diode
Reverse Polarity of D.U.T for P-Channel
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VDD
Forward Drop
Inductor
Current
Inductor Curent
Ripple ≤ 5%
*
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
‚
D=
Period
P.W.
+
ISD
* VGS = 5V for Logic Level Devices
Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
IRFHS9351PbF
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
Vgs(th)
SS
Qgodr
Fig 16a. Gate Charge Test Circuit
I AS
D.U.T
RG
IAS
-V
GS
-20V
tp
Qgs2 Qgs1
Fig 16b. Gate Charge Waveform
L
VDS
Qgd
VDD
A
DRIVER
0.01Ω
tp
V(BR)DSS
15V
Fig 17b. Unclamped Inductive Waveforms
Fig 17a. Unclamped Inductive Test Circuit
VDS
RD
td(on)
VGS
RG
t d(off)
tf
VGS
D.U.T.
10%
+
V DD
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
6
tr
90%
VDS
Fig 18b. Switching Time Waveforms
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IRFHS9351PbF
PQFN Package Details
PQFN Part Marking
9351
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFHS9351PbF
PQFN Tape and Reel
CORE
TAPE
Remark:
Width
Table 2:
COVER
TAPE
(WIDTH)
5.4 mm
9.5 mm
- Dimension above are typical dimensions.
- Cover tape thickness is 0.048mm +/- 0.005mm.
- Surface resistivity 10E5 < Rs <10E9.
TOLERANCE
+/- 0.1 mm
+/- 0.1 mm
Qualification information
†
††
Qualification level
Consumer
(per JEDEC JESD47F
†††
guidelines )
MSL1
Moisture Sensitivity Level
RoHS compliant
PQFN 2mm x 2mm
(per IPC/JEDEC J-STD-020D†† † )
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
†
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N. Sepulveda, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/11
8
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