KEC E50A2CBS Stack silicon diffused diode (alternator diode for automotive) Datasheet

SEMICONDUCTOR
E50A2CBS, E50A2CBR
TECHNICAL DATA
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
A
·Average Forward Current : IO=50A.
·Repetive Peak Reverse Voltage : VRRM=200V
POLARITY
E50A2CBS
E50A2CBR
(+ Type)
(- Type)
K
H
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
E I
SYMBOL
RATING
UNIT
Average Forward Current
IF(AV)
50
A
Peak 1 Cycle Surge Current
IFSM
380 (60Hz)
A
Repetitive Peak Revese Voltage
VRRM
200
V
Tj
-40~215
℃
Tstg
-40~215
℃
Junction Temperature
Storage Temperature Range
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
_ 0.04
Φ1.3 +
_ 0.2
4.2+
_ 0.2
8.0 +
TYP 0.5
_ 0.2
Φ10.0 +
_ 0.1x45
0.4+
8.5 MAX
0.2+0.1
_ 0.5
28.35+
J D
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
-
-
1.05
V
200
-
-
V
Forward Voltage
VF
IFM=100A
Reverse Voltage
VR
IR=5mA
Reverse Current
IR
VR=200V
-
-
50
μA
ΔVF
IFM=100A, IM=100mA, Pw=100ms
-
-
80
mV
HIR
Ta=150℃, VR=200V
-
-
2.5
mA
Reverse Recovery Time
trr
IF=100mA, IR=100mA
-
-
15
μs
Temperature Resistance
Rth
DC total Junction to case
-
-
0.6
℃/W
Transient Thermal Resistance
Reverse Leakage Current Under
High Temperature
2002. 4. 9
Revision No : 2
1/1
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