AIKW75N60CT TRENCHSTOPTMSeries LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryantiparallelEmitterControlleddiode Features: C •AutomotiveAEC-Q101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •Maximumjunctiontemperature175°C •Dynamicallystresstested •Shortcircuitwithstandtime5µs •100%shortcircuittested •100%ofthepartsaredynamicallytested •PositivetemperaturecoefficientinVCE(sat) •LowEMI •LowgatechargeQG •Greenpackage •Verysoft,fastrecoveryantiparallelEmitterControlledHE diode •TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed G E G C Applications: E •Maininverter •Climatecompressor •PTCheater •Motordrives KeyPerformanceandPackageParameters Type AIKW75N60CT Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 75A 1.5V 175°C AK75DCT PG-TO247-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries MaximumRatings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 80.0 75.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 225.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 225.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IF 80.0 75.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 225.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 428.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 1) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,2) junction - case Rth(j-c) - - 0.35 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 0.60 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) 2) Package not recommended for surface mount application Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. Datasheet 3 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=75.0A Tvj=25°C Tvj=175°C - 1.50 1.90 2.00 - V - 1.65 1.60 2.05 - V 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=75.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=1.20mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - 1750 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=75.0A - 41.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 4620 - - 288 - - 137 - - 470.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=20.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - 690 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 33 - ns - 36 - ns - 330 - ns - 35 - ns - 2.00 - mJ - 2.50 - mJ - 4.50 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=400V,IC=75.0A, VGE=0.0/15.0V, RG(on)=5.0Ω,RG(off)=5.0Ω, Lσ=100nH,Cσ=39pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1460A/µs dirr/dt - 121 - ns - 2.40 - µC - 39.0 - A - -920 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 32 - ns - 37 - ns - 363 - ns - 38 - ns - 2.90 - mJ - 2.90 - mJ - 5.80 - mJ - 182 - ns - 5.80 - µC - 56.0 - A - -1000 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=75.0A, VGE=0.0/15.0V, RG(on)=5.0Ω,RG(off)=5.0Ω, Lσ=100nH,Cσ=39pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=75.0A, diF/dt=1460A/µs dirr/dt 5 V2.1 2017-02-09 AIKW75N60CT 450 90 400 80 350 70 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] TRENCHSTOPTMSeries 300 250 200 150 60 50 40 30 100 20 50 10 0 25 50 75 100 125 150 0 175 25 50 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 125 150 175 225 VGE=20V 200 VGE=20V 200 15V 15V 13V 175 13V 175 11V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 225 9V 150 7V 125 100 75 125 100 75 25 25 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25°C) Datasheet 9V 7V 50 0.0 11V 150 50 0 75 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=175°C) 6 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries 100 3.0 Tvj = 25°C Tvj = 175°C IC,COLLECTORCURRENT[A] 80 70 60 50 40 30 20 10 0 2 3 4 5 6 7 8 9 IC = 37.5A IC = 75A IC = 150A 2.7 VCE(sat),COLLECTOR-EMITTERSATURATION[V] 90 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 10 25 VGE,GATE-EMITTERVOLTAGE[V] 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 5. Typicaltransfercharacteristic (VCE=20V) Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 1 0 20 40 60 80 100 120 140 100 10 160 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,RG=5Ω,Dynamictestcircuitin Figure E) Datasheet 2 4 6 8 10 12 14 16 RG,GATERESISTOR[Ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=75A,Dynamictestcircuitin Figure E) 7 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries 1000 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 150 typ. min. max. 6 5 4 3 2 1 0 175 25 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=75A,RG=5Ω,DynamictestcircuitinFigure E) 100 125 150 175 10 Eoff Eon Ets Eoff Eon Ets 9 8 E,SWITCHINGENERGYLOSSES[mJ] 14 E,SWITCHINGENERGYLOSSES[mJ] 75 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1.2mA) 16 12 10 8 6 4 7 6 5 4 3 2 2 0 50 Tvj,JUNCTIONTEMPERATURE[°C] 1 0 20 40 60 80 100 120 0 140 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,RG=5Ω,Dynamictestcircuitin Figure E) Datasheet 0 2 4 6 8 10 12 14 16 RG,GATERESISTOR[Ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=0/15V,IC=75A,Dynamictestcircuitin Figure E) 8 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries 6 10 Eoff Eon Ets 5 8 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 9 4 3 2 7 6 5 4 3 2 1 1 0 25 50 75 100 125 150 0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] 350 400 450 500 550 600 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=75A,RG=5Ω,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=0/15V, IC=75A,RG=5Ω,Dynamictestcircuitin Figure E) 18 VCC=120V VCC=480V 16 Cies Coes Cres 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 1E+4 10 8 6 1000 100 4 2 0 0 100 200 300 400 10 500 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=75A) Datasheet 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries 14 1125 12 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 1250 1000 875 750 625 500 375 250 10 8 6 4 2 125 0 12 13 14 15 16 17 18 19 0 20 10 VGE,GATE-EMITTERVOLTAGE[V] 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj≤150°C) Figure 18. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE=400V,startatTvj=25°C,Tjmax≤150°C) ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.029 0.0509 0.0733 0.1968 τi[s]: 1.2E-4 8.2E-4 9.3E-3 0.115504 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 5 ri[K/W]: 0.04 0.0818 0.1261 0.1681 0.1846 τi[s]: 1.0E-5 1.2E-4 1.2E-3 0.015543 0.110373 1 0.001 1E-7 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) Datasheet 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 10 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries 250 7 Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A 225 Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 6 200 175 150 125 100 75 50 5 4 3 2 1 25 0 1000 1200 1400 1600 1800 0 1000 2000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 1400 1600 1800 2000 Figure 22. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 70 -200 Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A 60 -400 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 1200 diF/dt,DIODECURRENTSLOPE[A/µs] 50 40 30 -600 -800 -1000 20 -1200 10 0 1000 1200 1400 1600 1800 2000 -1400 1000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Datasheet 1200 1400 1600 1800 2000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,DynamictestcircuitinFigureE) 11 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries 225 2.50 Tvj = 25°C Tvj = 175°C 200 2.25 2.00 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 175 150 125 100 75 1.75 1.50 1.25 1.00 50 0.75 25 0 IF = 37.5A IF = 75A IF = 150A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.50 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 26. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries Package Drawing PG-TO247-3 Datasheet 13 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.1 2017-02-09 AIKW75N60CT TRENCHSTOPTMSeries RevisionHistory AIKW75N60CT Revision:2017-02-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-02-09 Data sheet created Datasheet 15 V2.1 2017-02-09 TrademarksofInfineonTechnologiesAG µHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™, CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™, EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™, HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™, ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™, PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™, StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™ TrademarksupdatedNovember2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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