Microsemi JANTXV2N6764 N-channel mosfet qualified per mil-prf-19500/543 Datasheet

2N6764, 2N6766, 2N6768 and 2N6770
Qualified Levels:
JAN, JANTX, and
JANTXV
N-CHANNEL MOSFET
Available on
commercial
versions
Qualified per MIL-PRF-19500/543
DESCRIPTION
This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military
qualified up to the JANTXV level for high-reliability applications. These devices are also
available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other
transistor products to meet higher and lower power ratings with various switching speed
requirements in both through-hole and surface-mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
TO-204AE (TO-3)
Package
FEATURES
•
JEDEC registered 2N6764, 2N6766, 2N6768 and 2N6770 number series.
•
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/543.
(See part nomenclature for all available options.)
•
Also available in:
RoHS compliant versions available (commercial grade only).
TO-254AA package
(leaded)
2N6764T1 & 2N6770T1
APPLICATIONS / BENEFITS
•
•
Low-profile metal can design.
Military and other high-reliability applications.
MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated
Parameters / Test Conditions
Symbol
Junction & Storage Temperature Range
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ TA = +25 °C
(1)
@ TC = +25 °C
Drain-Source Voltage, dc
2N6764
2N6766
2N6768
2N6770
Gate-Source Voltage, dc
(2)
Drain Current, dc @ TC = +25 ºC
2N6764
2N6766
2N6768
2N6770
(2)
Drain Current, dc @ TC = +100 ºC
2N6764
2N6766
2N6768
2N6770
(3)
Off-State Current (Peak Total Value)
2N6764
2N6766
2N6768
2N6770
Source Current
2N6764
2N6766
2N6768
2N6770
TJ &
Tstg
R ӨJC
PT
V DS
V GS
I D1
I D2
I DM
IS
Value
Unit
-55 to +150
°C
0.83
4
150
100
200
400
500
± 20
38.0
30.0
14.0
12.0
24.0
19.0
9.0
7.75
152
120
56
48
38.0
30.0
14.0
12.0
o
C/W
W
V
V
A
A
A (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
A
Website:
www.microsemi.com
Notes featured on next page.
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 1 of 9
2N6764, 2N6766, 2N6768 and 2N6770
NOTES:
1.
2.
Derate linearly by 1.2 W/ºC for T C > +25 ºC.
The following formula derives the maximum theoretical I D limit. I D is limited by package and internal wires and may also be limited by
pin diameter:
3.
I DM = 4 x I D1 as calculated in note 2.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: TO-3 metal can.
TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on
commercial grade only.
MARKING: Manufacturer's ID, part number, date code.
WEIGHT: Approximately 12.7 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N6764
(e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
(see Electrical Characteristics
table)
Symbol
di/dt
IF
RG
V DD
V DS
V GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 2 of 9
2N6764, 2N6766, 2N6768 and 2N6770
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
2N6764
2N6766
2N6768
2N6770
V GS = 0 V, I D = 1.0 mA
Gate-Source Voltage (Threshold)
V DS ≥ V GS , I D = 0.25 mA
V DS ≥ V GS , I D = 0.25 mA, T J = +125 °C
V DS ≥ V GS , I D = 0.25 mA, T J = -55 °C
Gate Current
V GS = ± 20 V, V DS = 0 V
V GS = ± 20 V, V DS = 0 V, T J = +125 °C
Drain Current
V GS = 0 V, V DS = 80 V
V GS = 0 V, V DS = 160 V
V GS = 0 V, V DS = 320 V
V GS = 0 V, V DS = 400 V
Drain Current
V GS = 0 V, V DS = 100 V, T J = +125 °C
V GS = 0 V, V DS = 200 V, T J = +125 °C
V GS = 0 V, V DS = 400 V, T J = +125 °C
V GS = 0 V, V DS = 500 V, T J = +125 °C
Drain Current
V GS = 0 V, V DS
V GS = 0 V, V DS
V GS = 0 V, V DS
V GS = 0 V, V DS
= 80 V, T J = +125 °C
= 160 V, T J = +125 °C
= 320 V, T J = +125 °C
= 400 V, T J = +125 °C
V (BR)DSS
100
200
400
500
2.0
1.0
Max.
Unit
V
4.0
V
5.0
I GSS1
I GSS2
±100
±200
nA
2N6764
2N6766
2N6768
2N6770
I DSS1
25
µA
2N6764
2N6766
2N6768
2N6770
I DSS2
1.0
mA
2N6764
2N6766
2N6768
2N6770
I DSS3
0.25
mA
r DS(on)1
0.055
0.085
0.3
0.4
Ω
r DS(on)2
0.065
0.09
0.4
0.5
Ω
r DS(on)3
0.094
0.153
0.66
0.88
V SD
1.9
1.9
1.7
1.7
2N6764
2N6766
2N6768
2N6770
Static Drain-Source On-State Resistance
V GS = 10 V, I D = 38.0 A pulsed
V GS = 10 V, I D = 30.0 A pulsed
V GS = 10 V, I D = 14.0 A pulsed
V GS = 10 V, I D = 12.0 A pulsed
2N6764
2N6766
2N6768
2N6770
T4-LDS-0101, Rev. 3 (121466)
Min.
V GS(th)1
V GS(th)2
V GS(th)3
Static Drain-Source On-State Resistance
V GS = 10 V, I D = 24.0 A pulsed
V GS = 10 V, I D = 19.0 A pulsed
V GS = 10 V, I D = 9.0 A pulsed
V GS = 10 V, I D = 7.75 A pulsed
Static Drain-Source On-State Resistance
T J = +125 °C
V GS = 10 V, I D = 24.0 A pulsed
V GS = 10 V, I D = 19.0 A pulsed
V GS = 10 V, I D = 9.0 A pulsed
V GS = 10 V, I D = 7.75 A pulsed
Diode Forward Voltage
V GS = 0 V, I D = 38.0 A pulsed
V GS = 0 V, I D = 30.0 A pulsed
V GS = 0 V, I D = 14.0 A pulsed
V GS = 0 V, I D = 12.0 A pulsed
Symbol
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
©2012 Microsemi Corporation
Ω
V
Page 3 of 9
2N6764, 2N6766, 2N6768 and 2N6770
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V GS = 10 V, I D = 38.0 A, V DS = 50 V
V GS = 10 V, I D = 30.0 A, V DS = 100 V
V GS = 10 V, I D = 14.0 A, V DS = 200 V
V GS = 10 V, I D = 12.0 A, V DS = 250 V
Symbol
2N6764
2N6766
2N6768
2N6770
Gate to Source Charge
V GS = 10 V, I D = 38.0 A, V DS
V GS = 10 V, I D = 30.0 A, V DS
V GS = 10 V, I D = 14.0 A, V DS
V GS = 10 V, I D = 12.0 A, V DS
= 50 V
= 100 V
= 200 V
= 250 V
2N6764
2N6766
2N6768
2N6770
Gate to Drain Charge
V GS = 10 V, I D = 38.0 A, V DS
V GS = 10 V, I D = 30.0 A, V DS
V GS = 10 V, I D = 14.0 A, V DS
V GS = 10 V, I D = 12.0 A, V DS
= 50 V
= 100 V
= 200 V
= 250 V
2N6764
2N6766
2N6768
2N6770
Min.
Max.
Unit
Q g(on)
125
115
110
120
nC
Q gs
22
22
18
19
nC
Q gd
65
60
65
70
nC
Max.
Unit
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I D = 38.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 30.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
Rise time
I D = 38.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 30.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
Turn-off delay time
I D = 38.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 30.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
Fall time
I D = 38.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 30.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD
Diode Reverse Recovery Time
di/dt = 100 A/µs, V DD ≤ 30 V, I D
di/dt = 100 A/µs, V DD ≤ 30 V, I D
di/dt = 100 A/µs, V DD ≤ 30 V, I D
di/dt = 100 A/µs, V DD ≤ 30 V, I D
T4-LDS-0101, Rev. 3 (121466)
= 38.0
= 30.0
= 14.0
= 12.0
A
A
A
A
Symbol
Min.
= 50 V
= 100 V
= 200 V
= 250 V
2N6764
2N6766
2N6768
2N6770
t d(on)
35
ns
= 50 V
= 100 V
= 200 V
= 250 V
2N6764
2N6766
2N6768
2N6770
tr
190
ns
= 50 V
= 100 V
= 200 V
= 250 V
2N6764
2N6766
2N6768
2N6770
t d(off)
170
ns
= 50 V
= 100 V
= 200 V
= 250 V
2N6764
2N6766
2N6768
2N6770
tf
130
ns
t rr
500
950
1200
1600
ns
2N6764
2N6766
2N6768
2N6770
©2012 Microsemi Corporation
Page 4 of 9
2N6764, 2N6766, 2N6768 and 2N6770
Thermal Response (ZθJC)
GRAPHS
t 1 , Rectangle Pulse Duration (seconds)
FIGURE 1
Thermal Response Curves
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 5 of 9
2N6764, 2N6766, 2N6768 and 2N6770
GRAPHS (continued)
ID DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs
T C CASE TEMPERATURE (ºC)
For 2N6766
ID DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
T C CASE TEMPERATURE (ºC)
For 2N6764
T C CASE TEMPERATURE (ºC)
For 2N6768
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
T C CASE TEMPERATURE (ºC)
For 2N6770
Page 6 of 9
2N6764, 2N6766, 2N6768 and 2N6770
GRAPHS (continued)
ID, DRAIN CURRENT (AMPERES)
FIGURE 3 – Maximum Safe Operating Area
ID, DRAIN CURRENT (AMPERES)
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6764
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6766
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 7 of 9
2N6764, 2N6766, 2N6768 and 2N6770
ID DRAIN CURRENT (AMPERES)
GRAPHS (continued)
ID DRAIN CURRENT (AMPERES)
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6768
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6770
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 8 of 9
2N6764, 2N6766, 2N6768 and 2N6770
PACKAGE DIMENSIONS
NOTE:
INCHES
DIM
1. Dimensions are in inches.
MIN
MAX
2. Millimeters are given for general information only.
A
0.875
3. These dimensions should be measured at points .050
B
0.060
0.135
inch (1.27 mm) and .055 inch (1.40 mm) below the
C
0.250
0.360
seating plane. When gauge is not used measurement
D
0.312
0.500
will be made at the seating plane.
D2
0.050
4. The seating plane of the header shall be flat within
0.057
0.063
E
.001 inch (0.03 mm) concave to .004 inch (0.10 mm)
0.038
0.043
F
0.131
0.188
convex inside a .930 inch (23.62 mm) diameter circle
G
1.177
1.197
on the center of the header and flat within .001 inch
H
0.655
0.675
(0.03 mm) concave to .006 inch (0.15 mm) convex
J
0.205
0.225
overall.
K
0.420
0.440
5. These dimensions pertain to the 2N6764 and 2N6766
L
0.495
0.525
types.
M
0.151
0.161
6. These dimensions pertain to the 2N6768 and 2N6770
types.
7. Mounting holes shall be deburred on the seating plane side.
8. Drain is electrically connected to the case.
9. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
MILLIMETERS
MIN
MAX
22.23
1.52
3.43
6.35
9.15
7.92
12.70
1.27
1.45
1.60
0.97
1.10
3.33
4.78
29.90
30.40
16.64
17.15
5.21
5.72
10.67
11.18
12.57
13.3
3.84
4.09
NOTES
(3)
DIA. (5)
DIA. (6)
Radius
Radius
DIA. (7)
SCHEMATIC
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 9 of 9
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