KEC MMBTA517 Epitaxial planar npn transistor Datasheet

SEMICONDUCTOR
MMBTA517
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
E
B
L
D
L
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
10
V
IC
400
mA
PC *
350
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 150
3
1
P
P
J
M
K
C
CHARACTERISTIC
H
)
N
MAXIMUM RATING (Ta=25
G
A
2
Collector Current
Collector Power Dissipation
* : Package Mounted On 99.5% Alumina 10 8
MILLIMETERS
_ 0.20
2.93 +
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
1. EMITTER
2. BASE
3. COLLECTOR
0.6mm.
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V(BR)CBO
IC=0.1mA
40
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA
30
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-1.0mA
10
-
-
V
Collector Cut-off Current
ICBO
VCB=40V
-
-
1
A
Emitter Cut-off Current
IEBO
VEB=10V
-
-
1
A
DC Current Gain
hFE
IC=100mA, VCE=2V
30K
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=1mA
-
-
1
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB=10mA
-
1.5
2
V
Current Gain Bandwidth Product
fT
IC=100mA, f=100MHz, VCE=2V
-
220
-
MHz
VCB=10V, f=1MHz
-
5
-
pF
Collector Output Capacitance
1999. 11. 30
Revision No : 3
Cob
1/2
MMBTA517
1999. 11. 30
Revision No : 3
2/2
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