MPLUSE MP4214100 Silicon bipolar low noise microwave transistor Datasheet

Silicon Bipolar Low Noise
Microwave Transistors
MP42141
Case Styles
Features
• Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz)
• High Power Gain At 1.0 GHz – 18.0 dB Typical
• Gold Metalization
• Hermetic and Surface Mount Packages Available
• Can be Screened to JANTX, JANTXV Equivalent Levels
• ION Implanted arsenic Emitter for Consistent Performance
Description
This NPN Silicon transistor finds applications in low
noise and medium power microwave amplifier circuitry.
The MP42141 exhibits an excellent noise figure
characteristic over the frequency range of .5 to 2 GHz.
This transistor also features good high frequency current
gain at medium current levels.
Micro-X
Applications
RF amplifiers and low level oscillators.
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
1
Silicon Bipolar High fT Low Noise Microwave Transistors
MP42141 Series
Absolute Maximum Ratings
MP42141 Series
Collector-Base Voltage
VCBO
27 V
Collector-Emitter Voltage
VCEO
20 V
Emitter-Base Voltage
VEBO
1.5 V
Collector Current
IC
50 mA
Junction Operating Temperature
Tj
200°C
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
-65°C to +200°C
-65°C to +125°C
Total Power Dissipation at 25°C
509 Case Style
400 mW
510 Case Style
700 mW
35 Case Style
700 mW
Electrical Specifications @ 25°C
MP42141 Series
Condition
Symbol
Units
MP4214100
Chip
MP4214135
Micro-X
MP42141-509
TO-72
Gain Bandwidth Product
VCE = 10 volts
Fm =1.0 GHz
Ic = 15 mA
fT
GHz
4.1 typ
-----
-----
Insertion Power Gain
VCE = 15 volts
IC = 15 mA
f = 1 GHz
f = 2 GHz
|S21E|2
dB
13 typ
7 typ
13 typ
7 min
11 typ
5 typ
VCE = 10 volts
IC = 5 mA
f = 1 GHz
f = 2 GHz
NF
2.0 typ
3.4 typ
2.0 typ
3.4 typ
2.3 typ
3.6 typ
VCE = 10 volts
IC = 15 mA
f = 1 GHz
GTU (max)
17 typ
17 typ
14 typ
VCE = 10 volts
IC = 10 mA
f = 1 GHz
P1dB
N/A
+7 typ
+4 typ
Parameter of Test
Noise Figure
Unilateral Gain
Power Out at 1 dB
Compression
Z=OPT
dB
dB
dBm
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
2
Silicon Bipolar High fT Low Noise Microwave Transistors
MP42141 Series
Electrical Specifications @ 25°C
MP42141 Series
Parameter
Condition
Symbol
Min
Typical
Max
Units
Collector Cut-off Current
VCB = 10 volts
IE = 0 µA
ICBO


100
nA
Emitter Cut-off Current
VEB = 1 volt
IC = 0 µA
IEBO


1
µA
Forward Current Gain
VCE = 10 volts
IC = 5 mA
hFE
20
125
250

Collector-Base
Junction Capacitance
VCB = 15 volts
f = 1 MHz
CCB

----
1.0
pF (35)
Typical Scattering Parameters
MP42141-511, VCE = 10 Volts, IC = 5 mA
Frequency
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
400
500
.626
.618
-112.9
-125.0
7.563
6.425
110.3
102.1
.044
.046
43.0
38.9
.726
.660
-34.3
-32.9
S11E
S21E
S12E
S22E
800
.577
-150.8
4.363
84.7
.054
34.3
.616
-38.6
1200
.566
-170.1
3.073
67.7
.062
32.9
.577
-43.1
1600
.661
-175.9
2.344
54.1
.069
32.6
.578
-50.4
2000
.561
166.2
1.894
43.2
.078
32.6
.571
-63.6
2400
.597
156.6
1.608
30.6
.084
30.3
.572
-70.8
2800
.506
147.8
1.408
17.9
.093
27.0
.565
-81.4
3200
.630
141.1
1.200
6.8
.099
24.6
.583
-90.7
3600
.651
133.7
1.072
-4.6
.106
21.7
.597
-102.6
4000
.643
132.9
.933
-6.5
.109
24.7
.599
-109.2
4400
.643
127.7
.796
-18.4
.112
21.4
.637
-121.6
4800
.656
122.7
.702
-28.8
.123
17.0
.686
-135.2
5000
.652
120.1
.657
-34.1
.123
14.0
.693
-142.1
MP42141-511, VCE = 15 Volts, IC = 15 mA
Frequency
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
400
500
.537
.547
-143.2
-152.2
10.294
8.564
100.9
93.7
.026
.028
45.4
46.0
.608
.569
-31.2
-29.3
S11E
S21E
S12E
S22E
800
.548
-170.2
5.694
79.2
.036
47.2
.562
-33.5
1200
.550
-176.9
3.867
65.9
.046
48.7
.532
-37.3
1600
.562
166.4
2.946
53.6
.056
48.0
.539
-43.9
2000
.579
158.8
2.383
43.8
.067
47.2
.539
-56.9
2400
.601
150.8
2.010
32.1
.074
43.4
.537
-63.4
2800
.608
143.3
1.755
20.0
.083
39.7
.530
-73.5
3200
.643
137.0
1.505
10.4
.091
36.6
.553
-82.5
3600
.657
130.1
1.338
-.0
.098
33.5
.560
-94.1
4000
.654
129.7
1.188
-1.4
.104
36.2
.565
-99.8
4400
.648
124.6
1.017
-13.3
.107
32.5
.600
-112.7
4800
.665
120.1
.905
-23.4
.120
27.5
.648
-125.9
5000
.650
117.2
.849
-28.9
.121
24.4
.657
-133.0
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3
Silicon Bipolar High fT Low Noise Microwave Transistors
MP42141 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
4
Silicon Bipolar High fT Low Noise Microwave Transistors
MP42141 Series
MP4214135
Micro-X
Emitter
F
4 PLCS.
MP4214135
E
H
Collector
Base
B
Emitter
A
C
G
D
DIM.
A
B
C
D
E
F
G
H
INCHES
MIN.
MAX.
0.092
0.108
0.079
0.087
0.070

0.019
0.025
0.018
0.022
0.150

0.003
0.006
45°
MILLIMETERS
MIN.
MAX.
2.34
2.74
2.01
2.21
1.78

0.48
0.64
0.46
0.56
3.81

0.08
0.15
45°
MP42141-509
TO-72
MP42141-509
INCHES
DIM
MIN.
MAX.
A
B
C
D
E
F
G
H
J
K
L
0.350
0.240
0.315
0.370
0.260
0.335
0.040
0.500
0.016
0.021
0.190
0.210
89 DEG 91 DEG
0.029
0.043
43 DEG 47 DEG
0.028
0.034
MILLIMETERS
MIN.
MAX.
8,89
6,11
8,00
12,70
0,41
0,53
4,83
5,33
89 DEG 91 DEG
0,74
1,09
43 DEG 47 DEG
0,71
0,86
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
9,40
6,60
8,51
1,02
5
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