MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 600VCoolMOS™CEPowerTransistor IPx60R2K1CE DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE 1Description DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features IPAK tab 1 tab 2 1 3 2 3 Drain Pin 2, Tab Gate Pin 1 •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating •Qualifiedforconsumergradeapplications Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandLighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 2100 mΩ Qg.typ 6.7 nC ID,pulse 6 A Eoss@400V 0.76 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package IPD60R2K1CE PG-TO 252 IPU60R2K1CE PG-TO 251 Final Data Sheet Marking 6R2K1CE 2 RelatedLinks see Appendix A Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Final Data Sheet 3 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 2.3 1.5 A TC=25°C TC=100°C - 6 A TC=25°C - - 11 mJ ID=0.4A; VDD=50V; see table 11 EAR - - 0.06 mJ ID=0.4A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 0.4 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation TO-252, TO-251 Ptot - - 22 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 2.0 A TC=25°C Diode pulse current IS,pulse - - 6 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE 3Thermalcharacteristics Table3ThermalcharacteristicsTO-251 Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 5.6 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C 1.6mm (0.063 in.) from case for 10s Unit Note/TestCondition Tsold Table4ThermalcharacteristicsTO-252 Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 5.6 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area °C/W for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed - - 260 °C Final Data Sheet Tsold 5 reflow MSL1 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table5Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=0.25mA 3.0 3.5 V VDS=VGS,ID=0.06mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.80 4.68 2.10 - Ω VGS=10V,ID=0.76A,Tj=25°C VGS=10V,ID=0.76A,Tj=150°C Gate resistance RG - 12 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current Table6Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 140 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 12 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 8.5 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 30 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 7 - ns VDD=400V,VGS=10V,ID=0.9A, RG=12.2Ω;seetable10 Rise time tr - 7 - ns VDD=400V,VGS=10V,ID=0.9A, RG=12.2Ω;seetable10 Turn-off delay time td(off) - 30 - ns VDD=400V,VGS=10V,ID=0.9A, RG=12.2Ω;seetable10 Fall time tf - 50 - ns VDD=400V,VGS=10V,ID=0.9A, RG=12.2Ω;seetable10 Unit Note/TestCondition Table7Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.8 - nC VDD=480V,ID=0.9A,VGS=0to10V Gate to drain charge Qgd - 3.6 - nC VDD=480V,ID=0.9A,VGS=0to10V Gate charge total Qg - 6.7 - nC VDD=480V,ID=0.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=0.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS 2) Final Data Sheet 6 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE Table8Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=0.9A,Tj=25°C 180 - ns VR=400V,IF=0.9A,diF/dt=100A/µs; see table 9 - 0.67 - µC VR=400V,IF=0.9A,diF/dt=100A/µs; see table 9 - 7.1 - A VR=400V,IF=0.9A,diF/dt=100A/µs; see table 9 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 101 25 1 µs 10 µs 20 100 µs 100 1 ms 10 ms 15 ID[A] Ptot[W] DC 10-1 10 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 1 101 10 1 µs 0.5 10 µs 100 µs 100 0.2 1 ms 100 0.1 0.05 ZthJC[K/W] ID[A] 10 ms DC 10-1 0.02 0.01 single pulse 10-1 10-2 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 6 4.0 20 V 20 V 10 V 3.5 10 V 5 8V 8V 3.0 7V 4 7V 3 ID[A] ID[A] 2.5 2.0 6V 1.5 5.5 V 5.5 V 1.0 5V 5V 0.5 6V 2 1 4.5 V 4.5 V 0 0 5 10 15 0.0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 10 6 9 5 8 5V 5.5 V 6V 6.5 V 4 7V 6 5 RDS(on)[Ω] RDS(on)[Ω] 7 10 V 4 3 typ 98% 2 3 1 2 1 0 1 2 3 4 0 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=0.76A;VGS=10V 9 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 6 10 25 °C 9 5 8 120 V 7 4 480 V VGS[V] ID[A] 6 150 °C 3 5 4 2 3 2 1 1 0 0 2 4 6 8 10 0 12 0 1 2 VGS[V] 3 4 5 6 7 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 12 25 °C 125 °C 11 10 9 101 IF[A] EAS[mJ] 8 100 7 6 5 4 3 2 1 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.4A;VDD=50V 10 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 700 680 660 103 620 C[pF] VBR(DSS)[V] 640 600 Ciss 102 580 Coss 101 560 540 Crss 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=0.25mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 1.20 1.10 1.00 0.90 Eoss[µJ] 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE 6TestCircuits Table9Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table10Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table11Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE Figure2OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 14 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE 8AppendixA Table12RelatedLinks • IFXCoolMOSTMCEWebpage:www.infineon.com • IFXCoolMOSTMCEapplicationnote:www.infineon.com • IFXCoolMOSTMCEsimulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 15 Rev.2.0,2014-09-25 600VCoolMOS™CEPowerTransistor IPD60R2K1CE,IPU60R2K1CE RevisionHistory IPD60R2K1CE, IPU60R2K1CE Revision:2014-09-25,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-09-25 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 16 Rev.2.0,2014-09-25