TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H01 HIGH-SPEED SWITCHING APPLICATIONS LORD SWITCHING APPLICATIONS STROBE FLASH APPLICATIONS 0.33±0.05 0.05 M A 2.4±0.1 ・Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive ・High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor) ・Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max) (NPN transistor) ・High-speed switching: tf = 25 ns (typ.) (NPN transistor) 0.475 1 4 0.65 B 0.05 M B 2.9±0.1 A 0.8±0.05 S 0.025 S 0.28 +0.1 -0.11 0.17±0.02 +0.13 Absolute Maximum Ratings (Ta = 25°C) 1.12 -0.12 1.12 +0.13 -0.12 Transistor Characteristics Symbol Rating Unit VCBO 100 V VCEX 80 VCEO 50 VEBO 6 (Note 1) IC 5.0 Pulse (Note 1) ICP 7.0 IB 0.5 A PC (Note 2) 1.0 W Tj 150 °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2.8±0.1 5 8 DC Base current Collector power dissipation (NPN) Junction temperature V V A 0.28 +0.1 -0.11 JEDEC - JEITA - TOSHIBA Symbol Rating Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±10 V DC ID 100 Pulse IDP 200 Tch 150 Drain Current Channel Temperature 2-3V1E Weight : 0.017g (Typ.) MOS FET Characteristics 5. BASE 6. EMITTER 7. GATE 8. DRAIN 1. SOURCE 2. COLLECTOR 3. COLLECTOR 4. COLLECTOR mA Circuit Configuration 8 7 6 1 2 3 5 4 °C Note 1: Ensure that the junction (channel) temperature does not exceed 150℃. Note 2: Device mounted on a glass-epoxy board (FR-4, 25.4×25.4×1.6 mm, Cu area: 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-13 TPCP8H01 Common Absolute Maximum Rating (Ta = 25°C) Characteristics Symbol Rating Unit Tstg −55 to 150 °C Storage temperature range Marking (Note 4) 8H01 Type Lot No. (Weekly code) * Note 4: The mark “z” on the lower left of the marking indicates Pin 1. * Weekly code (three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (Last digit of the of the calendar year) Electrical Characteristics (Ta = 25°C) Transistor Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.5 A 250 ⎯ 400 hFE (2) VCE = 2 V, IC = 1.6 A 100 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1.6 A, IB = 53 mA ⎯ 80 130 mV Base-emitter saturation voltage VBE (sat) IC = 1.6 A, IB = 53 mA ⎯ 0.8 1.1 V Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 22 ⎯ pF tr See Figure 1 circuit diagram. ⎯ 65 ⎯ VCC ≒ 24 V, RL = 15 Ω ⎯ 500 ⎯ IB1 = −IB2 = 53 mA ⎯ 25 ⎯ Collector-emitter breakdown voltage DC current gain Collector output capacitance Rise time Switching time Storage time tstg Fall time tf ns Figure 1 Switching Time Test Circuit & Timing Chart VCC IB1 Input IB1 RL 20 μs Output IB2 IB2 Duty cycle < 1% 2 2006-11-13 TPCP8H01 MOS FET Characteristics Symbol Test Condition Min Typ. Max Unit IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±1 μA V(BR)DSS ID = 0.1 mA, VGS = 0 20 ⎯ ⎯ V Drain cut-off current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage V th VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V ｜Yfs｜ VDS = 3 V, ID = 10 mA 40 ⎯ ⎯ mS ID = 10 mA , VGS = 4.0 V ⎯ 1.5 3 ID = 10 mA , VGS = 2.5 V ⎯ 2.2 4 ID = 1 mA , VGS = 1.5 V ⎯ 5.2 15 ⎯ 9.3 ⎯ ⎯ 4.5 ⎯ ⎯ 9.8 ⎯ ⎯ 70 ⎯ ⎯ 125 ⎯ Gate leakage current Drain-Source breakdown voltage Forward transfer admittance Drain-Source ON resistance RDS(ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time Turn-on time ton Turn-off time toff VDS = 3 V, VGS = 0, f= 1 MHz See Figure 2 circuit diagram. VDD ≒ 3 V, RL = 300 Ω VGS = 0 to 2.5 V Ω pF ns Figure 2 Switching Time Test Circuit & Timing Chart Vout 2.5V Gate Pulse Width 10μs, tr,tf<5ns (Zout=50Ω),Common Source,Ta=25°C Duty Cycle<1% RL Vin Rg 0 10us VDD Precautions Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device. The VGS recommended voltage for turning on this product is 2.5 V or higher. 3 2006-11-13 TPCP8H01 NPN IC – VCE hFE – IC 1000 5 60 50 40 Ta = 100°C 20 DC current gain hFE Collector current IC (A) 30 4 3 10 2 IB = 5 mA 25°C −55°C 100 1 Common emitter VCE = 2 V Single nonrepetitive pulse Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 0.4 1.2 0.8 2.0 1.6 Collector−emitter voltage VCE 10 0.001 2.4 0.01 Base−emitter saturation voltage VBE (sat) (V) Collector−emitter saturation voltage VCE (sat) (V) 0.1 Ta = 100°C (A) −55°C Common emitter β = 30 Single nonrepetitive pulse Ta = −55°C 1 100°C 25°C 25°C 0.01 0.1 1 Collector current IC 0.01 0.001 10 0.01 (A) 0.1 (W) Ta = 100°C −55°C 2 1 25°C 0.4 0.6 Base−emitter voltage (A) DC operation Ta = 25 °C Mounted on an FR4 board glass epoxy, 1.6 mm thick, Cu area: 645 2 mm ) 1.0 PC Collector power dissipation 3 0.2 10 Pc – Ta 1.2 Common emitter VCE = 2 V Single nonrepetitive pulse 4 0 0 1 Collector current IC IC – VBE 5 (A) 10 VBE (sat) – IC 10 Common emitter β = 30 Single nonrepetitive pulse 0.01 0.001 Collector current IC 1 Collector current IC (V) VCE (sat) – IC 1 0.1 0.8 1.0 0.8 0.6 0.4 0.2 0 0 1.2 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) VBE (V) 4 2006-11-13 TPCP8H01 rth (j-c) – tw (°C/W) rth (j-c) Transient thermal resistance 1000 100 10 1 0.001 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area IC max (Pulsed) * 10 ms* 1 ms* 100 μs* 10 μs* 100 ms* 10 s* 1 DC operation (Ta = 25°C) IC max (Continuous) *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 0.1 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu 2 area: 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 VCEO max Collector current IC (A) 10 10 Collector−emitter voltage VCE 100 (V) 5 2006-11-13 TPCP8H01 Nch-MOS RDS (ON) − ID ID – VDS 12 Common source Ta = 25°C 10 4 3 2.5 2.3 200 Drain−source ON resistance RDS (ON) (Ω) Drain current ID (mA) 250 2.1 1.9 150 1.7 100 1.5 50 Common source Ta = 25°C 10 8 VGS = 1.5 V 6 4 2.5 2 VGS = 1.3 V 0 0 0.5 1.0 1.5 Drain−source voltage VDS 4 0 2.0 1 10 1000 Common source Forward transfer admittance ⎪Yfs⎪ (S) Drain−source ON resistance RDS (ON) (Ω) VGS = 1.5 V, ID = 1 mA 5 4 2.5 V, 10 mA 3 2 4.0 V, 10 mA 1 0 −25 0 25 50 75 Ambient temperature 100 Ta 125 100 10 1 150 1 100 ID 1000 (mA) Capacitance − VDS 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C (pF) Common source VDD = 3 V VGS = 0～2.5V Ta = 25°C toff (ns) 10 Drain current (°C) t − ID 10000 C t 1000 tf 100 Capacitance Switching time 1000 (mA) Common source VDS = 3 V Ta = 25°C 7 6 ID ⎪Yfs⎪ − ID RDS (ON) – Ta 8 100 Drain current (V) ton 10 Ciss Coss tr 10 0.1 Crss 1 Drain current 10 ID 1 0.1 100 (mA) 1 Drain−source voltage 6 10 VDS 100 (V) 2006-11-13 TPCP8H01 RDS (ON) − VGS ID − VGS 8 Common source VDS = 3 V Drain−source ON resistance RDS (ON) (Ω) Drain current ID (mA) 1000 100 −25 Ta = 100°C 10 1 25 0.1 Common source ID = 10 mA 6 4 Ta = 100°C 2 25 0.01 0 1 2 Gate−source voltage 0 0 3 VGS (V) 2 4 IDR (mA) Drain reverse current Vth (V) Gate threshold voltage 1.2 0.8 0.4 0 25 50 75 Ambient temperature 8 10 VGS (V) IDR − VDS 250 Common source ID = 0.1 mA VDS = 3 V 1.6 0 −25 6 Gate−source voltage Vth − Ta 2.0 −25 100 Ta 125 200 150 100 50 0 0 150 Common source VGS = 0 V Ta = 25°C −0.2 −0.4 −0.6 −0.8 Drain−source voltage (°C) 7 −1.0 −1.2 −1.4 VDS (V) 2006-11-13 TPCP8H01 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2006-11-13