ON NCV8450STT3G Self-protected high side driver with temperature and current limit Datasheet

NCV8450
Self-Protected High Side
Driver with Temperature
and Current Limit
The NCV8450 is a fully protected High−Side Smart Discrete device
with a typical RDS(on) of 1.0 W and an internal current limit of 0.8 A
typical. The device can switch a wide variety of resistive, inductive,
and capacitive loads.
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MARKING
DIAGRAM
Features
•
•
•
•
•
•
•
•
•
•
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
Loss of Ground Protection
ESD Protection
Slew Rate Control for Low EMI
Very Low Standby Current
AEC−Q100/101 qualified
This is a Pb−Free Device
SOT−223
(TO−261)
CASE 318E
A
Y
W
G
AYW
V8450G
G
1
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Typical Applications
ORDERING INFORMATION
• Automotive
• Industrial
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
PRODUCT SUMMARY
Symbol
Characteristics
VIN_CL
Overvoltage Protection
VD(on)
Operation Voltage
Ron
On−State Resistance
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 2
Value
Unit
54
V
4.5 − 45
V
1.0
W
1
Publication Order Number:
NCV8450/D
NCV8450
VD (Pins 2, 4)
Regulated
Charge Pump
Output
Clamping
Control
Logic
IN
(Pin 1)
R_IN
OUT
(Pin 3)
Current
Limitation
Overtemperature
Detection
Figure 1. Block Diagram
PACKAGE PIN DESCRIPTION
Pin #
Symbol
Description
1
IN
Control Input, Active Low
2
VD
Supply Voltage
3
OUT
4
VD
Output
Supply Voltage
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2
NCV8450
MAXIMUM RATINGS
Value
Rating
DC Supply Voltage (Note 1)
Load Dump Protection
(RI = 2 W, td = 400 ms, VIN = 0, 10 V, IL = 150 mA, Vbb = 13.5 V)
Symbol
Min
Max
Unit
VD
−16
45
V
100
V
15
mA
Internally Limited
A
VLoaddump
Input Current
Iin
Output Current (Note 1)
Iout
Total Power Dissipation
@ TA = 25°C (Note 2)
@ TA = 25°C (Note 3)
−15
PD
W
1.13
1.60
Electrostatic Discharge (Note 4)
(Human Body Model (HBM) 100 pF/1500 W)
Input
All other
kV
1
5
Single Pulse Inductive Load Switching Energy (Note 4)
(VDD = 13.5 V, I = 465 mApk, L = 200 mH, TJStart = 150°C)
EAS
Operating Junction Temperature
Storage Temperature
29
mJ
TJ
−40
+150
°C
Tstorage
−55
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.
2. Minimum Pad.
3. 1 in square pad size, FR−4, 1 oz Cu.
4. Not subjected to production testing.
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance (Note 5)
Junction−to−Ambient (Note 2)
Junction−to−Ambient (Note 3)
Symbol
Max Value
RqJA
RqJA
110
78.3
5. Not subjected to production testing.
−
+
ID
VD
IIN
IN
OUT
VOUT
NCV8450
Figure 2. Applications Test Circuit
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3
Unit
K/W
NCV8450
ELECTRICAL CHARACTERISTICS (6 v VD v 45 V; −40°C <TJ < 150°C unless otherwise specified)
Value
Symbol
Rating
Conditions
Min
Typ
Max
Unit
OUTPUT CHARACTERISTICS
Operating Supply Voltage
VSUPPLY
On Resistance
(Pin 1 Connected to GND)
RON
−
45
V
TJ = 25°C , IOUT = 150 mA, VD = 7 V − 45 V
TJ = 150°C, IOUT = 150 mA, VD = 7 V − 45 V
(Note 6)
TJ = 25°C , IOUT= 150 mA, VD = 6 V
1.0
1.4
2
3
W
1.1
2.1
ID
VD v 20 V
VD > 20 V
0.6
10
100
Input Current – Off State
IIN_OFF
VOUT v 0.1 V, RL = 270 W, TJ = 25°C
VOUT v 0.1V, RL = 270 W, TJ = 150°C (Note 6)
Input Current – On State
(Pin 1 Grounded)
IIN_ON
1.5
Input Resistance (Note 6)
RIN
1
Standby Current (Pin 1 Open)
4.5
mA
INPUT CHARACTERISTICS
−50
−40
mA
3
mA
kW
SWITCHING CHARACTERISTICS
Turn−On Time (Note 7)
(VIN = VD to 0 V) to 90% VOUT
tON
RL = 270 W (Note 6)
VD = 13.5 V, RL = 270 W, TJ = 25°C
30
125
100
ms
Turn−Off Time (Note 7)
(VIN = 0 V to VD ) to 10% VOUT
tOFF
RL = 270 W (Note 6)
VD = 13.5 V, RL = 270 W, TJ = 25°C
60
175
150
ms
Slew Rate On (Note 7)
(VIN = VD to 0V) 10% to 30%
VOUT
dV/dtON
RL = 270 W (Note 6)
VD = 13.5 V, RL = 270 W, TJ = 25°C
0.7
4
4
V/ms
Slew Rate Off (Note 7)
(VIN = 0 V to VD) 70% to 40%
VOUT
dV/dtOFF
RL = 270 W (Note 6)
VD = 13.5 V, RL = 270 W, TJ = 25°C
0.9
4
4
V/ms
0.6
OUTPUT DIODE CHARACTERISTICS (Note 6)
Drain−Source Diode Voltage
VF
IOUT = −0.2 A
Continuous Reverse Drain
Current
IS
TJ = 25°C
V
0.2
A
−
°C
PROTECTION FUNCTIONS (Note 8)
Temperature Shutdown (Note 6)
Temperature Shutdown
Hysteresis (Note 6)
Output Current Limit
TSD
150
TSD_HYST
ILIM
175
5
TJ = −40°C, VD = 13.5 V, tm = 100 ms (Note 6)
TJ = 25 °C, VD = 13.5 V, tm = 100 ms
TJ = 150 °C , VD = 13.5 V, tm = 100 ms (Note 6)
0.5
0.8
°C
1.5
A
Output Clamp Voltage
(Inductive Load Switch Off)
At VOUT = VD − VCLAMP
VCLAMP
IOUT = 4 mA
45
52
V
Overvoltage Protection
VIN_CL
ICLAMP = 4 mA
50
54
V
6. Not subjected to production testing
7. Only valid with high input slew rates
8. Protection functions are not designed for continuous repetitive operation and are considered outside normal operating range
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4
NCV8450
TYPICAL CHARACTERISTIC CURVES
2.0
1.8
1.0
Iout = 150 mA
0.95
1.6
1.2
RDS(on) (W)
RDS(on) (W)
1.4
VD = 6 V
1.0
0.8
VD = 15 V
0.6
0.85
0.8
VD = 9 V
0.75
0.7
0.4
0.65
0.2
0
−40
VD = 6 V
0.9
−20
0
20
40
60
80 100
TEMPERATURE (°C)
120
0.6
140
TA = 25°C
0
0.1
80
4.5
70
TURN ON TIME (ms)
4.0
RDS(on) (W)
3.5
125°C
25°C
150°C
2.0
−40°C
1.5
1.0
0
0
10
20
30
40
VD = 42 V
50
40
VD = 13.5 V
30
20
VD = 9 V
1.2
SLEW RATE (ON) (V/ms)
120
VD = 42 V
80
VD = 13.5 V
60
VD = 9 V
40
20
−20
0
20
40
60
80
100
0
20
40
60
80
100
120
140
Figure 6. Turn On Time vs. Temperature
RLOAD = 270 W
100
−20
TEMPERATURE (°C)
Figure 5. RDS(on) vs. VD
TURN OFF TIME (ms)
RLOAD = 270 W
60
0
−40
50
VD (V)
0
−40
0.5
10
0.5
140
0.4
Figure 4. RDS(on) vs. Output Load
5.0
2.5
0.3
OUTPUT LOAD (A)
Figure 3. RDS(on) vs. Temperature
3.0
0.2
120
1.0
VD = 42 V
0.8
VD = 13.5 V
0.6
VD = 9 V
0.4
0.2
0
−40
140
RLOAD = 270 W
−20
0
20
40
60
80
100
120
140
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 8. Slew Rate (ON) vs. Temperature
Figure 7. Turn Off Time vs. Temperature
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5
NCV8450
TYPICAL CHARACTERISTIC CURVES
1.4
VD = 13.5 V
1
0.8
1.2
VD = 42 V
CURRENT LIMIT (A)
SLEW RATE (OFF) (V/ms)
1.2
VD = 9 V
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
−40
RLOAD = 270 W
−20
0
20
40
60
80
100
120
0
−40
140
VD = 13.5 V
−20
40
60
80
100
120
140
TEMPERATURE (°C)
Figure 10. Current Limit vs. Temperature
70
VD, LEAKAGE CURRENT (mA)
1.0
TA = −40°C
0.8
25°C
0.6
125°C
0.4
150°C
0.2
0
0
10
30
20
VD = 45 V
50
40
30
20
10
0
−40
50
40
60
VD = 25 V
VD = 15 V
−20
VD, VOLTAGE (V)
0
20
40
60
80 100
TEMPERATURE (°C)
120
140
Figure 12. VD Leakage Current vs.
Temperature Off−State
Figure 11. Peak Short Circuit Current vs. VD
Voltage
70
2.5
60
INPUT CURRENT (mA)
VD, LEAKAGE CURRENT (mA)
20
TEMPERATURE (°C)
1.2
50
40
30
125°C
−40°C
20
150°C
25°C
10
0
0
0
Figure 9. Slew Rate (OFF) vs. Temperature
1.4
PEAK SC CURRENT (A)
1
5
10
15
20
25
30
35
40
2.0
1.5
VD = 28 V
VD = 15 V
1.0
VD = 6 V
0.5
0
−40
45
VD = 45 V
−20
0
20
40
60
80
100
120
VD, VOLTAGE (V)
TEMPERATURE (°C)
Figure 13. VD Leakage Current vs. VD Voltage
Off−State
Figure 14. On−State Input Current vs.
Temperature
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6
140
NCV8450
TYPICAL CHARACTERISTIC CURVES
80
150°C
60
125°C
50
25°C
40
−40°C
10
OUTPUT VOLTAGE (V)
INPUT CURRENT (mA)
70
12
Rout = 100 W
30
20
10
0
0
20
8.0
6.0
4.0
2.0
ROUT = 100 kW
VIN = 0 V
0
0
40
1
2
3
VD, VOLTAGE (V)
8
9
900
8
800
150°C
7
6
700
5
CURRENT (mA)
125°C
−40°C
4
3
25°C
2
600
500
400
300
200
1
TA = 150°C
VD = 20 V
100
0
5
0
50
10 15 20 25 30 35 40 45 50 55 60 65
VD, VOLTAGE (V)
100
Figure 17. Single Pulse Maximum Switch−off
Current vs. Load Inductance
1000
VD = 13.5 V
100
VD = 24 V
VD = 42 V
10
1
−40
−20
0
20
150
LOAD INDUCTANCE (mH)
Figure 16. Input Current vs. VD Voltage
On−State
SHUTDOWN TIME (ms)
INPUT CURRENT (mA)
7
Figure 15. Output Voltage vs. VD Voltage
Figure 18. Input Current vs. VD Voltage
Off−State
0
4
5
6
VD, VOLTAGE (V)
40
60
80
100
120 140
TEMPERATURE (°C)
Figure 19. Initial Short−Circuit Shutdown Time
vs. Temperature
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7
10
NCV8450
TYPICAL CHARACTERISTIC CURVES
140
120
RqJA (°C/W)
100
PCB Cu thickness, 1.0 oz
80
60
PCB Cu thickness, 2.0 oz
40
20
0
300
400
500
600
100
200
COPPER HEAT SPREADER AREA (mm2)
0
700
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
Figure 20. RqJA vs. Copper Area
1000
100
Duty Cycle = 0.5
0.2
10 0.1
0.05
0.02
1 0.01
0.1 Single Pulse
0.01
Psi TSP−A(t)
0.001
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (s)
Figure 21. Transient Thermal Response
ISO PULSE TEST RESULTS
Test Pulse
Test Level
Test Results
Pulse Cycle Time and Generator Impedance
1
200 V
C
500 ms, 10 W
2
150 V
C
500 ms, 10 W
3a
200 V
C
100 ms, 50 W
3b
200 V
C
100 ms, 50 W
5
175 V
E(100 V)
400 ms, 2 W
ORDERING INFORMATION
Device
NCV8450STT3G
Package
Shipping†
SOT−223
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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8
NCV8450
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE M
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
HE
E
1
2
3
b
e1
e
0.08 (0003)
C
q
A
A1
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
q
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
L1
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCV8450/D
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