NTST40H120CTG Very Low Forward Voltage Trench-based Schottky Rectifier Features www.onsemi.com • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These are Pb−Free Devices VERY LOW FORWARD VOLTAGE, SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 120 VOLTS PIN CONNECTIONS Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 1 2, 4 3 4 Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 1 2 3 TO−220AB CASE 221A STYLE 6 MARKING DIAGRAM AYWW TS40H120G AKA TO−220AB A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2014 October, 2016 − Rev. 1 1 Publication Order Number: NTST40H120CT/D NTST40H120CTG MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 124°C) (Rated VR, TC = 132°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 119°C) (Rated VR, Square Wave, 20 kHz, TC = 130°C) Per device Per diode Symbol Value Unit VRRM VRWM VR 120 V IF(AV) A 40 20 IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) A 80 40 IFSM 250 A Operating Junction Temperature TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol NTST40H120CTG Unit RqJC RqJA 0.81 70 °C/W °C/W Maximum Thermal Resistance per Device Junction−to−Case Junction−to−Ambient ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) (IF = 20 A, TJ = 25°C) Typ Max 0.52 0.65 0.85 − − 0.91 0.46 0.55 0.66 − − 0.69 6 7 − − mA mA − 20 65 42 mA mA vF (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) (IF = 20 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 90 V, TJ = 25°C) (VR = 90 V, TJ = 125°C) V IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Unit Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% www.onsemi.com 2 NTST40H120CTG TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 150°C TA = 125°C 10 1 TA = 25°C TA = −40°C TA = 25°C 1 TA = −55°C 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 IR, INSTANTANEOUS REVERSE CURRENT (A) 0 IR, INSTANTANEOUS REVERSE CURRENT (A) TA = 125°C 10 0.1 0.1 1.4 1.E−01 TA = 150°C TA = 125°C 1.E−02 TA = 150°C 1.E−02 1.E−03 TA = 125°C 1.E−03 1.E−04 1.E−04 1.E−05 TA = 25°C 1.E−06 TA = 25°C 1.E−05 10 20 30 40 50 60 70 80 90 100 110 120 30 40 50 60 70 80 90 100 110 120 Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) VR, INSTANTANEOUS REVERSE VOLTAGE (V) TJ = 25°C 1000 100 0.1 10 20 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 10,000 C, JUNCTION CAPACITANCE (pF) TA = 150°C 1 10 100 35 DC 30 25 Square Wave 20 15 10 RqJC = 1.3°C/W 5 0 0 10 30 50 70 90 110 130 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Diode www.onsemi.com 3 150 NTST40H120CTG 70 18 DC 60 50 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS Square Wave 40 30 20 10 RqJC = 0.81°C/W 0 IPK/IAV = 10 16 Square Wave IPK/IAV = 5 14 DC IPK/IAV = 20 12 10 8 6 4 2 0 0 10 30 50 70 90 110 130 150 0 2 4 6 8 10 12 14 16 18 20 22 24 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating per Device Figure 8. Forward Power Dissipation 100 50% Duty Cycle 20% 10% 5% 2% 1 1% R(t) (°C/W) 10 0.1 0.01 Junction−to−Ambient, PCB area 100 mm2, PCB thk 1 oz, Die area 19.52 mm2, Active area 41.7% Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 t, PULSE TIME (s) Figure 9. Thermal Characteristics ORDERING INFORMATION Device NTST40H120CTG Package Shipping TO−220AB (Pb−Free) 50 Units / Rail www.onsemi.com 4 1000 NTST40H120CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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