ASI CBSL100 Npn silicon rf power transistor Datasheet

CBSL100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL100 is Designed for
Class AB, Cellular Base Station
Applications up to 960 MHz.
PACKAGE STYLE .400 BAL FLG (C)
.080x45°
A
B
FULL R
FEATURES:
(4X).060 R
E
• Internal Input/Output Matching Network
• PG = 9.0 dB at 100 W/ 960 MHz
• Omnigold™ Metalization System
M
D
C
.1925
F
H
G
N
I
L
MAXIMUM RATINGS
J
25 A
IC
VCBO
60 V
K
DIM
MIN IMUM
inches / m m
MAXIMUM
inches / m m
A
.220 / 5.59
.230 / 5.84
.210 / 5.33
B
C
.120 / 3.05
D
.380 / 9.65
.130 / 3.30
.390 / 9.91
E
.780 / 19.81
.820 / 20.83
VCEO
30 V
F
.435 / 11.05
VEBO
3.0 V
G
1.090 / 27.69
H
1.335 / 33.91
1.345 / 34.16
310 W @ TC = 25 °C
I
.003 / 0.08
.007 / 0.18
J
.060 / 1.52
.070 / 1.78
K
.082 / 2.08
.100 / 2.54
M
.395 / 10.03
.407 / 10.34
N
.850 / 21.59
.870 / 22.10
PDISS
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
0.6 °C/W
CHARACTERISTICS
ORDER CODE: ASI10585
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.205 / 5.21
L
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
60
V
BVCEO
IC = 100 mA
30
V
BVEBO
IE = 50 mA
3.0
V
ICES
VCE = 28 V
hFE
VCE = 5.0 V
IC = 3.0 A
PG
IMD
ηC
VCE = 24 V
POUT = 100 W
ICQ = 2 X 100 mA
15
f = 960 MHz
9.0
-32
45
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
10
mA
70
--dB
dBc
%
REV. B
1/1
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