PHILIPS BFS17W Npn 1 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17W
NPN 1 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
1995 Sep 04
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
APPLICATIONS
BFS17W
PINNING
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
handbook, 2 columns
PIN
3
DESCRIPTION
1
base
2
emitter
3
collector
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
1
2
Top view
MBC870
Marking code: E1
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
−
−
25
V
VCEO
collector-emitter voltage
−
−
15
V
IC
DC collector current
−
−
50
mA
Ptot
total power dissipation
up to Ts = 118 °C; note 1
−
−
300
mW
hFE
DC current gain
IC = 2 mA; VCE = 1 V
25
90
−
fT
transition frequency
IC = 25 mA; VCE = 5 V
−
1.6
−
GHz
Cc
collector capacitance
IE = 0; VCB = 10 V; f = 1 MHz
−
0.8
1.5
pF
Cre
feedback capacitance
IC = 1 mA; VCE = 5 V; f = 1 MHz
−
0.75
−
pF
Tj
junction temperature
−
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
25
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
50
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Ts = 118 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 04
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
UNIT
190
K/W
MAX.
UNIT
up to Ts = 118 °C; note 1
thermal resistance from junction to soldering point
Rth j-s
VALUE
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
TYP.
−
ICBO
collector cut-off current
hFE
DC current gain
IC = 2 mA; VCE = 1 V
25
90
−
fT
transition frequency
IC = 25 mA; VCE = 5 V;
f = 500 MHz
−
1.6
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 10 V;
f = 1 MHz
−
0.8
1.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz
−
2
−
pF
Cre
feedback capacitance
IB = ib = 0; VCE = 5 V;
f = 1 MHz; Tamb = 25 °C
−
0.75
−
pF
F
noise figure
IC = 2 mA; VCE = 5 V;
f = 500 MHz; ΓS = Γopt
−
4.5
−
dB
IE = 0; VCB = 10 V
nA
MBG237
MLB587
400
10
60
handbook, halfpage
handbook, halfpage
P tot
(mW)
hFE
300
40
200
20
100
0
0
0
50
100
150
200
T s ( o C)
10−1
1
10
IC (mA)
102
VCE = 1 V.
Fig.3
Fig.2 Power derating curve.
1995 Sep 04
3
DC current gain as a function of collector
current; typical values.
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
MBG238
2
MBG239
2.5
handbook, halfpage
handbook, halfpage
Cre
(pF)
fT
(GHz)
1.5
2
VCE = 10 V
1
5V
1.5
0.5
1
0
0
2
4
6
8
10
VCB (V)
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
MBG240
20
handbook, halfpage
F
(dB)
15
10
5
0
10−3
10−2
10−1
1
10
102
103
f (MHz)
VCE = 10 V.
Fig.6
1995 Sep 04
IC (mA)
102
Tamb = 25 °C; f = 500 MHz.
IB = ib = 0; f = 1 MHz.
Fig.4
10
1
Minimum noise figure as function of
frequency; typical values.
4
Transition frequency as a function
of collector current; typical values.
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
PACKAGE OUTLINE
1.00
max
handbook, full pagewidth
0.2 M A
0.2 M B
0.1
max
0.4
0.2
0.2
A
3
2.2
2.0
1.35
1.15
1
2
0.3
0.1
1.4
1.2
0.25
0.10
2.2
1.8
B
Dimensions in mm.
Fig.7 SOT323.
1995 Sep 04
5
MBC871
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 04
6
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