Renesas CR5AS-12 Thyristor medium power use Datasheet

CR5AS-12
Thyristor
Medium Power Use
REJ03G0346-0200
Rev.2.00
Apr.05.2005
Features
• IT (AV) : 5 A
• VDRM : 600 V
• IGT : 100 µA
• Lead Mounted Type
• Non-Insulated Type
• Glass Passivation Type
Outline
RENESAS Package code: PRSS0004ZD-D
(Package name: DPAK(L)-(3))
4
2, 4
1. Cathode
2. Anode
3. Gate
4. Anode
3
1
1
2
3
Applications
Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for
autocycle, electric tool, strobe flasher, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
Rev.2.00,
Apr.05.2005,
page 1 of 7
Symbol
Voltage class
12
Unit
VRRM
VRSM
VR(DC)
VDRM
VD(DC)
600
720
480
600
480
V
V
V
V
V
CR5AS-12
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Symbol
IT (RMS)
IT (AV)
Ratings
7.8
5
Unit
A
A
ITSM
90
A
I2 t
33
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.5
0.1
6
6
0.3
– 40 to +125
– 40 to +125
0.26
W
W
V
V
A
°C
°C
g
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 88°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. With gate to cathode resistance RGK = 220 Ω.
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
Repetitive peak off-state current
IDRM
—
—
2.0
mA
On-state voltage
VTM
—
—
1.8
V
Gate trigger voltage
Gate non-trigger voltage
VGT
VGD
—
0.1
—
—
0.8
—
V
V
Gate trigger current
Holding current
IGT
IH
1
—
—
3.5
100Note3
—
µA
mA
Thermal resistance
Rth (j-c)
—
—
3.0
°C/W
Test conditions
Tj = 125°C, VRRM applied,
RGK = 220 Ω
Tj = 125°C, VDRM applied,
RGK = 220 Ω
Tc = 25°C, ITM = 15 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 125°C, VD = 1/2 VDRM,
RGK = 220 Ω
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 25°C, VD = 12 V,
RGK = 220 Ω
Junction to caseNote2
Notes: 2. The measurement point for case temperature is at anode tab.
3. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 220 Ω resistance between the gate and
cathode.
Rev.2.00,
Apr.05.2005,
page 2 of 7
CR5AS-12
Performance Curves
102
7 Tc = 25°C
5
3
2
Rated Surge On-State Current
100
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
101
7
5
3
2
100
7
5
3
2
VFGM = 6V
PGM = 0.5W
PG(AV) = 0.1W
VGT = 0.8V
7
5
3
2
IGT = 100µA IFGM = 0.3A
(Tj = 25°C)
7
VGD = 0.1V
5 -2
10 23 5710-1 23 57 100 23 57 10123 57102 23
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
× 100 (%)
103
7
5
3
2
#1
#2
Typical Example
IGT(25°C)
# 1 11µA
# 2 61µA
102
7
5
3
2
101
7
5
3 V = 6V
2 D
RL = 60Ω
100
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
1.0
Gate Trigger Voltage (V)
40
Gate Trigger Current vs.
Junction Temperature
–1
Tj = 25°C
0.9
Distribution
0.8
0.7
Typical Example
0.6
0.5
0.4
0.3
0.2
0.1
0
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.2.00,
50
Gate Characteristics
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
100
60
Conduction Time (Cycles at 60Hz)
Apr.05.2005,
page 3 of 7
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
7
5
3
2
70
On-State Voltage (V)
102
101
80
0
100
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
7
5
3
2
90
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7
5
3
2
Junction to ambient
102
7
5
3
2
101
7
5
3
2
Junction to case
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
Time (s)
CR5AS-12
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
14
90° 120°
12
60°
10
8
6
θ = 30°
θ
4
360°
Resistive,
inductive loads
2
0
160
180°
Case Temperature (°C)
Average Power Dissipation (W)
16
0
1
2
3
4
5
6
7
120
Resistive,
inductive loads
100
80
60
40
0
8
θ = 30°
90°
60°
0
1
2
3
180°
120°
4
5
6
7
8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
140
θ
120
360°
Resistive,
inductive loads
Natural convection
100
80
60
θ = 30°
40
60°
90°
120°
20
180°
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Ambient Temperature (°C)
160
140
θ
120
360°
Resistive,
inductive loads
Natural convection
100
80
60
θ = 30°
60°
90°
20
120°
180°
0
0
1
2
Aluminum Board
80×80×t2.3
40
3
4
5
6
8
7
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
16
160
14
140
θ
120
360°
Resistive loads
θ
12
θ
Case Temperature (°C)
Ambient Temperature (°C)
Average Power Dissipation (W)
θ
360°
20
160
180°
360°
10 Resistive
loads
8
90°
θ = 30° 60°
120°
6
4
2
0
0
1
2
3
4
5
6
7
Apr.05.2005,
page 4 of 7
8
θ
100
80
60
40
θ = 30°
20
Average On-State Current (A)
Rev.2.00,
140
0
0
1
2
60° 90° 120° 180°
3
4
5
6
7
Average On-State Current (A)
8
CR5AS-12
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
θ
120
360°
Resistive loads
Natural convection
100
80
60 θ = 30°
60°
40
90°
120°
20
180°
160
0
θ
120
θ
360°
Resistive loads
Natural convection
100
80
θ = 30°
60°
90°
120°
180°
60
40
20
0
1
2
3
4
5
6
7
Average On-State Current (A)
Average On-State Current (A)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Gate to Cathode Resistance
Typical Example
RGK = 220Ω
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
103
7 Typical Example
5
3
2
8
Tj = 125°C
102
7
5
3
2
101
7
5
3
2
100
10-2 2 3 5 710-1 2 3 5 7100 2 3 5 7 101
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
160
Tj = 125°C
RGK = 220Ω
140
120
100
80
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Rise of Off-State Voltage (V/µs)
Rev.2.00,
Aluminum Board
80×80×t2.3
140
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 220Ω) × 100 (%)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
θ
Ambient Temperature (°C)
140
0
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
160
Holding Current (mA)
Ambient Temperature (°C)
160
Apr.05.2005,
page 5 of 7
102
7
5
4
Distribution
3
2
Typical Example
101
7
5
4
3
2
100
7
5
4
3 VD = 12V
2 RGK = 220Ω
10–1
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
400
Typical Example
IGT(25°C) IH(1kΩ)
350
14µA
1.7mA
#1
48µA
2.7mA
300 # 2
Tj = 25°C
250
#1
200
#2
150
100
50
0 -2
10 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101
Gate to Cathode Resistance (kΩ)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
× 100 (%)
Gate Trigger Current vs.
Gate Current Pulse Width
104
7
5
3
2
Typical Example
IGT(DC)
# 1 11µA
# 2 61µA
#1
#2
103
7
5
3
2
102
7
5
V = 6V
3 D
R = 60Ω
2 L
Ta = 25°C
101
0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Rev.2.00,
Apr.05.2005,
page 6 of 7
× 100 (%)
Holding Current vs.
Gate to Cathode Resistance
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Holding Current (RGK = rΩ)
Holding Current (RGK = 220Ω) × 100 (%)
CR5AS-12
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
CR5AS-12
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]

PRSS0004ZD-D
DPAK(L)-(3)/DPAK(L)-(3)V
0.36g
Unit: mm
6.5 ± 0.5
2.3 ± 0.2
5.4 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
(1.3)
1.15 ± 0.1
0.8 ± 0.1
0.6 ± 0.1
0.6 ± 0.1
4.7 ± 0.5
6.9 ± 0.5
5.5 ± 0.5
8.2 ± 0.6
0.55 ± 0.1
0.55 ± 0.1
0.55 ± 0.1
2.29
0.55 ± 0.1
2.29
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
100 Type name – A1
Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Apr.05.2005,
page 7 of 7
Standard order
code example
CR5AS-12-A1
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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