APT58M80J 800V, 60A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. D G SO 2 T- 27 "UL Recognized" file # E145592 ISOTOP ® D APT58M80J Single die MOSFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 60 Continuous Drain Current @ TC = 100°C 36 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 3725 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 43 A 1 325 Thermal and Mechanical Characteristics Min Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 960 RθJC Junction to Case Thermal Resistance 0.13 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight -55 150 V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m Terminals and Mounting Screws. MicrosemiWebsite-http://www.microsemi.com °C 04-2009 TJ,TSTG °C/W 0.15 Rev B Characteristic 050-8111 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ΔVBR(DSS)/ΔTJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ΔVGS(th)/ΔTJ IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance 3 VDS = 800V TJ = 25°C VGS = 0V TJ = 125°C Typ Max 0.87 0.08 4 -10 0.10 5 100 500 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C µA nA TJ = 25°C unless otherwise specified Parameter gfs 800 VGS = VDS, ID = 5mA Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Min VGS = 10V, ID = 43A 3 IDSS Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA APT58M80J Min Test Conditions VDS = 50V, ID = 43A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Typ 80 17550 300 1745 Max Unit S pF 825 VGS = 0V, VDS = 0V to 533V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 410 570 95 290 100 145 435 125 VGS = 0 to 10V, ID = 43A, VDS = 400V Resistive Switching VDD = 533V, ID = 43A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge dv/dt Peak Recovery dv/dt Min Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Typ D Max Unit 60 A G 325 S ISD = 43A, TJ = 25°C, VGS = 0V ISD = 43A, VDD = 100V 3 diSD/dt = 100A/µs, TJ = 25°C ISD ≤ 43A, di/dt ≤1000A/µs, VDD = 533V, TJ = 125°C 1.0 V ns µC 1100 42 10 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 4.03mH, RG = 2.2Ω, IAS = 43A. 04-2009 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 050-8111 Rev B Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT58M80J 100 250 V GS = 10V T = 125°C 80 TJ = 25°C 150 100 TJ = 125°C 50 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) V TJ = -55°C 200 5.5V 70 60 50 5V 40 30 20 10 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4V 0 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 350 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. VGS = 10V @ 43A 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 300 2.5 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 2.0 1.5 1.0 0.5 250 200 TJ = -55°C 150 TJ = 25°C 100 TJ = 125°C 50 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 100 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 30,000 90 Ciss 10,000 TJ = -55°C 80 TJ = 25°C C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE = 10, & 15V GS = 6, & 6.5V GS 4.5V TJ = 150°C 0 V J 90 70 TJ = 125°C 60 50 40 30 1,000 Coss 100 Crss 20 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 200 400 600 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 350 12 VDS = 160V 10 VDS = 400V 8 6 VDS = 640V 4 2 300 250 200 TJ = 25°C 150 TJ = 150°C 100 50 0 0 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 04-2009 ID = 43A 14 0 10 70 Rev B VGS, GATE-TO-SOURCE VOLTAGE (V) 16 10 050-8111 0 ISD, REVERSE DRAIN CURRENT (A) 0 APT58M80J 400 400 IDM 13µs 10 100µs 1ms Rds(on) 10ms 1 100ms 0.1 Rds(on) 13µs 100µs 10 1ms 10ms 100ms DC line TJ = 150°C TC = 25°C 1 Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line TJ = 125°C TC = 75°C 1 IDM 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 0.1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.12 0.10 0.7 0.08 0.5 0.06 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.3 0.04 t1 t2 t1 = Pulse Duration 0.02 0 t 0.1 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.05 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) 050-8111 Rev B 04-2009 r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.