Renesas H5N2005DS Silicon n channel mos fet high speed power switching Datasheet

H5N2005DL, H5N2005DS
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1104-0200
(Previous: ADE-208-1373)
Rev.2.00
Sep 07, 2005
Features
• Low on-resistance
• Low drive current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
D
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2
3
S
2
3
Rev.2.00 Sep 07, 2005 page 1 of 4
H5N2005DL, H5N2005DS
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Value
200
Unit
V
VGSS
ID
±30
6
V
A
24
6
A
A
24
25
A
W
θ ch-c
Tch
5
150
°C/W
°C
Tstg
–55 to +150
°C
Gate to source voltage
Drain current
Note 1
Drain peak current
Body-drain diode reverse drain current
ID (pulse)
IDR
Body-drain diode reverse drain peak current
Channel dissipation
IDR (pulse)
Note 2
Pch
Note 1
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
200
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
IGSS
IDSS
—
—
—
—
±0.1
1
µA
µA
VGS = ±30 V, VDS = 0
VDS = 200 V, VGS = 0
VGS (off)
RDS (on)
3.0
—
—
0.52
4.5
0.65
V
Ω
VDS = 10 V, ID = 1 mA
Note 3
ID = 3 A, VGS = 10 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
2.0
—
3.4
300
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
44
12.5
—
—
pF
pF
ID = 3 A, VDS = 10 V
VDS = 25 V
VGS = 0
f = 1 MHz
Total gate charge
Gate to source charge
Qg
Qgs
—
—
9.8
2.0
—
—
nC
nC
Gate to drain charge
Turn-on delay time
Qgd
td (on)
—
—
5.2
23
—
—
nC
ns
tr
24
43.5
—
—
ns
ns
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
VDD = 160 V
VGS = 10 V
ID = 6 A
ID = 3 A
VGS = 10 V
RL = 33.3 Ω
Rg = 10 Ω
Rise time
Turn-off delay time
td (off)
—
—
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
11
1.0
—
1.5
ns
V
IF = 6 A, VGS = 0
Body-drain diode reverse recovery time
Body-drain diode reverse recovery charge
trr
Qrr
—
—
90
400
—
—
ns
nC
IF = 6 A, VGS = 0
diF/dt = 100 A/µs
Note:
3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 4
Note 3
H5N2005DL, H5N2005DS
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]

PRSS0004ZD-B
DPAK(L)-(2) / DPAK(L)-(2)V
0.42g
Unit: mm
1.7 ± 0.5
JEITA Package Code
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
RENESAS Code
Package Name
MASS[Typ.]
SC-63
PRSS0004ZD-C
DPAK(S) / DPAK(S)V
0.28g
6.5 ± 0.5
5.4 ± 0.5
(0.1)
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
Rev.2.00 Sep 07, 2005 page 3 of 4
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
JEITA Package Code
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
H5N2005DL, H5N2005DS
Ordering Information
Part Name
H5N2005DL-E
H5N2005DSTL-E
Quantity
3200 pcs
3000 pcs
Shipping Container
Box (Sack)
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 4 of 4
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