NTE NTE3104 Opto interrupter module photo reflector, npn transistor output Datasheet

NTE3104
Opto Interrupter Module
Photo Reflector, NPN Transistor Output
Description:
The NTE3104 is a subminiature photo reflector whose GaAs infrared emitting diode and silicon transistor are assembled in the same package allowing for easy installation and handling.
The NTE3104 has an excellent S/N ratio (more than 40dB) and contains a built–in filter for cutting
visible light.
Typical applications for the NTE3104 include strobe detection in audio turntables, tape end detection,
automatic vending machines, and various other automatic control units.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Emitter
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW
Detector
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW
Coupled
Total Power Dissipation, Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Isolation Voltage (Note 2), Viso . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20° to +90°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +100°C
Note 1. Pulse Width ≤ 10µs, Duty Ratio: 0.01
Note 2. R.H. = 40% to 60% for one minute.
Electro–Optical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter
Forward Voltage
VF
IF = 4mA
–
1.08
1.15
V
Pulse Forward Voltage
VFP
IFP = 500mA
–
1.4
–
V
Reverse Current
IR
VR = 6V
–
–
1
µA
Peak Wavelength
λ
IF = 50mA, TA = +25°C
–
940
–
nm
Spectral Half Bandwidth
∆λ
IF = 50mA, TA = +25°C
–
50
–
nm
Capacitance
Ct
VR = 0, f = 1MHz
–
35
–
pF
VCE = 2V
–
–
20
nA
Detector
Dark Current
ICEO
Collector–Emitter Voltage
V(BR)CEO
iC = 100µA
25
–
–
V
Emitter–Collector Voltage
V(BR)ECO
iC = 100µA
6
–
–
V
IF = 4mA, VCE = 2V, d = 1mm
12
–
125
µA
ICEOD
IF = 4mA, VCE = 2V
–
–
50
nA
Rise Time
tr
–
70
500
µs
Fall Time
tf
VCE = 2V, IF = 4mA,
RL = 1kΩ,
Ω d = 1mm
–
50
500
µs
R.H. = 40% to 60%, 250V at E–D
–
1000
–
MΩ
Coupled
Output Current
Collector Dark Current
Isolation Resistance
IO
Riso
.126
(3.2)
.157 (4.0)
.118
(3.0)
.472
(12.0)
Min
.070 (1.8)
Cathode
Anode
.039 (1.0)
Collector
Emitter
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